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MAC229-6

Description
Triacs Silicon Bidirectional Triode Thyristors
CategoryAnalog mixed-signal IC    Trigger device   
File Size116KB,3 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Parametric Compare View All

MAC229-6 Overview

Triacs Silicon Bidirectional Triode Thyristors

MAC229-6 Parametric

Parameter NameAttribute value
MakerNew Jersey Semiconductor
Reach Compliance Codeunknow
Maximum operating temperature110 °C
Minimum operating temperature-40 °C
Trigger device typeTRIAC
, U
na,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MAC229
Triacs
Silicon Bidirectional Triode Thyristors
. . . designed primarily for industrial and consumer applications for full wave control of
ac loads such as appliance controls, heater controls, motor controls, and other power
switching applications.
• All Diffused and Glass-Passivated Junctions for Parameter Uniformity and
Stability
• Small, Rugged, Thermowatt Construction for Low Thermal resistance and High
Heat Dissipation
• Center Gate Geometry for Uniform Current Spreading
• Gate Triggering Guaranteed in Three Modes (MAC229 Series) or Four Modes
(MAC229A Series)
MAC229A
TRIACs
8 AMPERES RMS
200 thru 800 VOLTS
(TO-220AB)
MAXIMUM RATINGS
(Tj = 25°C unless otherwise noted.)
Rating
Peak Repetitive Off-State VoltageO)
(Tj = -40to 110°C
1/2 Sine ave 50 to 60 Hz, Gate Open)
MAC229-4, MAC229A4
MAC229-6, MAC229A6
MAC229-8, MAC229A8
MAC229-10, MAC229A10
On-State RMS Current (TQ = 80°C)
Full Cycle Sine Wave 50 to 60 Hz
Peak Non-repetitive Surge Current
(One Full Cycle 60 Hz, Tj = 110°C)
Circuit Fusing
(t = 8.3 ms)
Peak Gate Current (t « 2 u.s)
Peak Gate Voltage (t « 2 u,s)
Peak Gate Power (t ^ 2 us)
Average Gate Power
(Tc = 80°C, t S 8.3 ms)
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque
Symbol
Value
Unit
Volts
VDRM
200
400
600
800
!
T(RMS)
8
80
26
±2
±10
20
0.5
-40 to 110
-40 to 150
8
Amps
Amps
A2
S
Amps
Volts
Watts
Watts
°C
"C
in. Ib.
(cont.)
ITSM
|2
t
'GM
V
GM
PGM
P
G(AV)
TJ
T
stg
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source
such that the voltage ratings of the devices are exceeded.
Quality Semi-Conductors

MAC229-6 Related Products

MAC229-6 MAC229-4 MAC229A4 MAC229A10 MAC229A8 MAC229A6 MAC229-8 MAC229-10 MAC229
Description Triacs Silicon Bidirectional Triode Thyristors Triacs Silicon Bidirectional Triode Thyristors Triacs Silicon Bidirectional Triode Thyristors Triacs Silicon Bidirectional Triode Thyristors Triacs Silicon Bidirectional Triode Thyristors Triacs Silicon Bidirectional Triode Thyristors Triacs Silicon Bidirectional Triode Thyristors Triacs Silicon Bidirectional Triode Thyristors Triacs Silicon Bidirectional Triode Thyristors
Maker New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor -
Reach Compliance Code unknow unknow unknow unknown unknow unknow unknow unknow -
Maximum operating temperature 110 °C 110 °C 110 °C 110 °C 110 °C 110 °C 110 °C 110 °C -
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -
Trigger device type TRIAC TRIAC TRIAC TRIAC TRIAC TRIAC TRIAC TRIAC -
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