, U
na,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MAC229
Triacs
Silicon Bidirectional Triode Thyristors
. . . designed primarily for industrial and consumer applications for full wave control of
ac loads such as appliance controls, heater controls, motor controls, and other power
switching applications.
• All Diffused and Glass-Passivated Junctions for Parameter Uniformity and
Stability
• Small, Rugged, Thermowatt Construction for Low Thermal resistance and High
Heat Dissipation
• Center Gate Geometry for Uniform Current Spreading
• Gate Triggering Guaranteed in Three Modes (MAC229 Series) or Four Modes
(MAC229A Series)
MAC229A
TRIACs
8 AMPERES RMS
200 thru 800 VOLTS
(TO-220AB)
MAXIMUM RATINGS
(Tj = 25°C unless otherwise noted.)
Rating
Peak Repetitive Off-State VoltageO)
(Tj = -40to 110°C
1/2 Sine ave 50 to 60 Hz, Gate Open)
MAC229-4, MAC229A4
MAC229-6, MAC229A6
MAC229-8, MAC229A8
MAC229-10, MAC229A10
On-State RMS Current (TQ = 80°C)
Full Cycle Sine Wave 50 to 60 Hz
Peak Non-repetitive Surge Current
(One Full Cycle 60 Hz, Tj = 110°C)
Circuit Fusing
(t = 8.3 ms)
Peak Gate Current (t « 2 u.s)
Peak Gate Voltage (t « 2 u,s)
Peak Gate Power (t ^ 2 us)
Average Gate Power
(Tc = 80°C, t S 8.3 ms)
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque
Symbol
Value
Unit
Volts
VDRM
200
400
600
800
!
T(RMS)
8
80
26
±2
±10
20
0.5
-40 to 110
-40 to 150
8
Amps
Amps
A2
S
Amps
Volts
Watts
Watts
°C
"C
in. Ib.
(cont.)
ITSM
|2
t
'GM
V
GM
PGM
P
G(AV)
TJ
T
stg
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source
such that the voltage ratings of the devices are exceeded.
Quality Semi-Conductors
MAC229 Series MAC229A Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (
Characteristic
Peak Blocking CurrentO )
(VD = Rated VDRM. Gate Open)
Tj = 25°C
Tj = 110°C
Symbol
Max
2.2
60
Unit
RGJC
R
9JA
°c/w
°c/w
Max
10
2
= 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
Symbol
Min
—
Typ
—
—
Unit
uA
mA
!DRM
Peak On-State Voltage
(I
TM
= 11 A Peak, Pulse Width =5 2 ms, Duty Cycle s 2%)
Gate Trigger Current (Continuous dc)
(V
D
= 12V, R
L
= 100 £1)
MT2(+), G(+); MT2(+), G(-); MT2(-), G(-)
MT2(-), G(+) "A" SUFFIX ONLY
Gate Trigger Voltage (Continuous dc)
VTM
IGT
—
1.8
Volts
mA
—
—
10
15
(VD = 12V, RL = 100 n)
MT2(+), G(+); MT2(+), G(-); MT2(-), G(-)
MT2(-), G(+) "A" SUFFIX ONLY
(V
D
= Rated V
DRM
, T
C
= 110°C, R
L
= 10 k)
MT2(+), G(+); MT2(+), G(-); MT2(-), G(-);
MT2(-), G(+) "A" SUFFIX ONLY
Holding Current
VGT
—
All Types
MAC229 series
0.2
0.2
2
2.5
Volts
(VD = 12 vdc, ITM =
2
°°
mA
,
Gate
°P
en
)
Gate-Controlled Turn-On Time
(VD = Rated VDRM. <TM =
16
A
Peak
.
!
G =
30 mA
)
Critical Rate of Rise of Off-State Voltage
(VQ = Rated VDRM, Exponential Waveform, TC = 110°C)
Critical Rate of Rise of Commutation Voltage
(V
D
= Rated VDRM, ITM = 11 -3 A,
Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C)
IH
<gt
dv/dt
dv/dt(c)
—
—
—
—
1.5
15
—
—
mA
us
V/us
V/us
25
5
1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage
applied exceeds the rated blocking voltage.
80
1.0
2.0
3.0
4.0
5.0
6.0
7.0
0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
lj(RMS).
RMS
ON-STATE CURRENT (AMP)
IT(RMS).
RMS
ON-STATE CURRENT (AMP)
OPLFT;
21
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