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2A05GX0

Description
Rectifier Diode, 1 Phase, 1 Element, 2A, 600V V(RRM), Silicon, DO-15,
CategoryDiscrete semiconductor    diode   
File Size245KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet Parametric View All

2A05GX0 Overview

Rectifier Diode, 1 Phase, 1 Element, 2A, 600V V(RRM), Silicon, DO-15,

2A05GX0 Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionO-PALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeDO-15
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current70 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage600 V
Maximum reverse current5 µA
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
CREAT BY ART
2.0 AMPS. Glass Passivated Rectifiers
DO-15
Features
Glass passivated chip junction
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
Green compound with suffix "G" on packing
code & prefix "G" on datecode
2A01G - 2A07G
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode
High temperature soldering guaranteed: 260℃/10s
/.375", (9.5mm) lead lengths at 5 lbs, (2.3kg) tension
Weight: 0.40 grams
Ordering Information (example)
Part No.
2A01G
Package
DO-15
Packing
1.5K / AMMO box
INNER
TAPE
52mm
Packing
code
A0
Green Compound
Packing code
A0G
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage (Note 1 )
@2A
Maximum DC Reverse Current at
Rated DC Blocking Voltage
@ T
A
=25
@ T
A
=125℃
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Cj
R
θJA
R
θJL
R
θJC
T
J
T
STG
2A
01G
50
35
50
2A
02G
100
70
100
2A
03G
200
140
200
2A
04G
400
280
400
2
70
2A
05G
600
420
600
2A
06G
800
560
800
2A
07G
1000
700
1000
Units
V
V
V
A
A
1.1
5
100
15
60
25
22
1.0
V
uA
uA
pF
O
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note1: Pulse Test with PW=300 usec, 1% Duty Cycle
C/W
O
O
- 65 to + 150
- 65 to + 150
C
C
Note2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Version:G12
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