Excelics
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17.3-18.1GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHED TO 50 OHM
EIA FEATURES HIGH PAE( 25% TYPICAL)
EIB FEATURES HIGH IP3(46dBm TYPICAL)
+33.5/+32.5dBm TYPICAL P
1dB
OUTPUT POWER FOR
EIA/EIB
7.5/5.5dB TYPICAL G
1dB
POWER GAIN FOR EIA/EIB
NON-HERMETIC METAL FLANGE PACKAGE
EIA/EIB1718A-2P
Not recommended for new designs. Contact factory. Effective 03/2003
17.3-18.1GHz, 2W Internally Matched Power FET
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
EIA1718A-2P
SYMBOLS
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression f=17.3-18.1GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
Gain at 1dB Compression
f=17.3-18.1GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
Power Added Efficiency at 1dB compression
f=17.3-18.1GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
Drain Current at 1dB Compression
Output 3
rd
Order Intercept Point
f=17.3-18.1GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
Saturated Drain Current Vds=3V, Vgs=0V
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
Vds=3V, Ids=12mA
-13
1100
MIN
32.5
6.5
TYP
33.5
7.5
MAX
EIB1718A-2P
MIN
32.0
5.0
TYP
32.5
5.5
MAX
UNIT
dBm
dB
P
1dB
G
1dB
PAE
Id
1dB
IP
3
I
dss
G
m
V
p
BV
gd
R
th
25
880
40
1440
1500
-1.0
-15
8
-2.5
1700
1100
20
850
46*
1360
700
-2.0
-15
8
o
%
mA
dBm
1700
mA
mS
-3.5
V
V
C/W
Drain Breakdown Voltage Igd=4.8mA
Thermal Resistance (Au-Sn Eutectic Attach)
*Typical –45dBc IM3 at Pout=23dBm/Tone
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
12V
-8V
Idss
180mA
32dBm
175 C
-65/175
o
C
17W
o
CONTINUOUS
2
8V
-3V
Idss
30mA
@ 3dB Compression
150
o
C
-65/150
o
C
14.2W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085
Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site: www.excelics.com
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