Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
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salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
PMV250EPEA
20 June 2014
SO
T2
3
40 V, P-channel Trench MOSFET
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
•
•
•
•
•
Logic-level compatible
Very fast switching
Trench MOSFET technology
1 kV ESD protected
AEC-Q101 qualified
3. Applications
•
•
•
•
Relay driver
High-speed line driver
High-side load switch
Switching circuits
4. Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= -10 V; T
amb
= 25 °C
V
GS
= -10 V; I
D
= -1.3 A; T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-20
-
Typ
-
-
-
Max
-40
20
-1.5
Unit
V
V
A
Static characteristics
drain-source on-state
resistance
[1]
2
-
180
240
mΩ
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm .
Scan or click this QR code to view the latest information for this product
NXP Semiconductors
PMV250EPEA
40 V, P-channel Trench MOSFET
5. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
G
S
D
gate
source
drain
1
2
S
017aaa259
Simplified outline
3
Graphic symbol
D
G
TO-236AB (SOT23)
6. Ordering information
Table 3.
Ordering information
Package
Name
PMV250EPEA
TO-236AB
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
7. Marking
Table 4.
Marking codes
Marking code
[1]
Type number
PMV250EPEA
[1]
%JY
% = placeholder for manufacturing site code
PMV250EPEA
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
20 June 2014
2 / 16
NXP Semiconductors
PMV250EPEA
40 V, P-channel Trench MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= -10 V; T
amb
= 25 °C
V
GS
= -10 V; T
amb
= 100 °C
I
DM
E
DS(AL)S
P
tot
peak drain current
non-repetitive drain-source
avalanche energy
total power dissipation
T
amb
= 25 °C; single pulse; t
p
≤ 10 µs
T
j(init)
= 25 °C; I
D
= -0.26 A; DUT in
avalanche (unclamped)
T
amb
= 25 °C
T
sp
= 25 °C
T
j
T
amb
T
stg
I
S
V
ESD
junction temperature
ambient temperature
storage temperature
[2]
[1]
[1]
[1]
Conditions
T
j
= 25 °C
Min
-
-20
-
-
-
-
-
-
-
-55
-55
-65
Max
-40
20
-1.5
-1
-6
5.5
480
890
6250
150
150
150
Unit
V
V
A
A
A
mJ
mW
mW
mW
°C
°C
°C
Source-drain diode
source current
T
amb
= 25 °C
HBM
[1]
-
-0.9
A
ESD maximum rating
electrostatic discharge voltage
[1]
[2]
[3]
[3]
-
1000
V
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm .
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Measured between all pins.
2
PMV250EPEA
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
20 June 2014
3 / 16
NXP Semiconductors
PMV250EPEA
40 V, P-channel Trench MOSFET
120
P
der
(%)
80
017aaa123
120
I
der
(%)
80
017aaa124
40
40
0
- 75
- 25
25
75
125
T
j
(°C)
175
0
- 75
- 25
25
75
125
T
j
(°C)
175
Fig. 1.
Normalized total power dissipation as a
function of junction temperature
Fig. 2.
Normalized continuous drain current as a
function of junction temperature
-10
I
D
(A)
-1
aaa-011993
t
p
= 10 µs
Limit R
DSon
= V
DS
/I
D
t
p
= 100 µs
t
p
= 1 ms
DC; T
amb
= 25 °C; drain mounting pad 6 cm
2
-10
-1
DC; T
sp
= 25 °C
t
p
= 100 ms
t
p
= 10 ms
-10
-2
-10
-1
-1
-10
V
DS
(V)
-10
2
I
DM
= single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
[1]
[2]
Min
-
-
Typ
230
120
Max
260
140
Unit
K/W
K/W
PMV250EPEA
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
20 June 2014
4 / 16
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