SMD Type
NPN Transistors
2SD1820
Transistors
■
Features
●
Low Collector-to-Emitter Saturation Voltage
●
Complementary to 2SB1219
1 Base
2 Emitter
3 Collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
stg
Rating
30
25
5
0.5
1
150
150
-55 to 150
A
mW
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE(1)
h
FE(2)
C
ob
f
T
Test Conditions
Ic= 100 μA， I
E
= 0
Ic= 2 mA， I
B
= 0
I
E
= 100μA， I
C
= 0
V
CB
= 25 V , I
E
= 0
V
EB
= 5V , I
C
=0
I
C
=300mA, I
B
=30mA
I
C
=300mA, I
B
=30mA
V
CE
= 10V, I
C
= 150mA
V
CE
= 10V, I
C
= 500 mA
V
CB
= 10V, I
E
= 0,f=1MHz
V
CE
= 10V, I
E
= -50 mA,f=200MHz
85
40
6
200
15
pF
MHz
0.35
Min
30
25
5
0.1
0.1
0.6
1.2
340
uA
V
V
Typ
Max
Unit
■
Classification of h
fe(1)
Type
Range
Marking
2SD1820 -Q
85-175
WQ
2SD1820 -R
120-240
WR
2SD1820 -S
170-340
WS
www.kexin.com.cn
1
SMD Type
NPN Transistors
2SD1820
■
Typical Characterisitics
P
C
— Ta
240
800
700
I
B
=10mA
9mA
8mA
7mA
6mA
5mA
4mA
400
300
200
100
0
3mA
2mA
1mA
Transistors
I
C
— V
CE
Ta=25˚C
800
700
I
C
— I
B
V
CE
=10V
Ta=25˚C
Collector power dissipation P
C
(mW)
200
Collector current I
C
(mA)
600
500
Collector current I
C
(mA)
20
600
500
400
300
200
100
0
160
120
80
40
0
0
20
40
60
80 100 120 140 160
0
4
8
12
16
0
2
4
6
8
10
Ambient temperature Ta (
˚C
)
Collector to emitter voltage V
CE
(V)
Base current I
B
(mA)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
V
BE(sat)
— I
C
Base to emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=10
100
30
10
3
1
0.3
0.1
0.03
0.01
0.01 0.03
Ta=–25˚C
75˚C
I
C
/I
B
=10
300
h
FE
— I
C
V
CE
=10V
100
30
10
3
1
0.3
25˚C
0.1
0.03
0.01
0.01 0.03
–25˚C
Ta=75˚C
Forward current transfer ratio h
FE
250
Ta=75˚C
25˚C
–25˚C
200
25˚C
150
100
50
0.1
0.3
1
3
10
0.1
0.3
1
3
10
0
0.01 0.03
0.1
0.3
1
3
10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
f
T
— I
E
240
12
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
Collector to emitter voltage V
CER
(V)
V
CB
=10V
Ta=25˚C
I
E
=0
f=1MHz
Ta=25˚C
120
V
CER
— R
BE
I
C
=2mA
Ta=25˚C
100
Transition frequency f
T
(MHz)
200
10
160
8
80
120
6
60
80
4
40
2SD1820
20
40
2
0
–1
–3
–10
–30
–100
0
1
3
10
30
100
0
1
3
10
30
100
300
1000
Emitter current I
E
(mA)
Collector to base voltage V
CB
(V)
Base to emitter resistance R
BE
(kΩ)
2
www.kexin.com.cn
Wireless Connectivity
京公网安备 11010802033920号
EEWORLD
