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PBMB200E6_15

Description
200A, 600V
File Size314KB,4 Pages
ManufacturerNI
Websitehttps://www.ni.com
Download Datasheet View All

PBMB200E6_15 Overview

200A, 600V

QMS7301-302M0709 (2/5)
Full Bridge
□ 回 路 図 :
CIRCUIT
IGBT
Module
200A/600V
110.0
4-Ø 6.5
PBMB200E6
□ 外 ½ 寸 法 図 :
OUTLINE DRAWING
3
2
1
4
5
4-M6
1
14 13
2
3
6 7
7
6
11
12
8
9
10
24
25
93.0
18
7
18
25
24
8-fasten tab
#110
7
18
8
30.0
4 5
9
LABEL
7
23
6 15 6
62.0
80.0
25.0
14
13
□ 最 大 定 格 :
MAXIMUM RATINGS
(at T
C
=25°C unless otherwise specified)
I½½½
S½½½½½
R½½½½
V½½½½
U½½½
12 11
Dimension:[mm½
コレクタ・エミッタ間電圧
Collector-Emitter Voltage
ゲート・エミッタ間電圧
G ate-E mitter V oltage
コ レ ク タ 電 流
Collector Current
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
圧 (Terminal to Base AC,1½inute)
Isolation Voltage
Module Base to Heatsink
締 め 付 け ト ル ク
Mounting Torque
Busbar to Main Terminal
□ 電 気 的 特 性
DC
1½½
CES
GES
CP
½
½½½
ISO
½½½
600
±20
200
400
780
-40½+150
-40½+125
2,500
3 3 .6
( 0 )
(RMS)
N・½
(kgf½cm)
ELECTRICAL CHARACTERISTICS
(at T
j
=25°C unless otherwise specified)
C½½½½½½½½½½½½½
S½½½½½
T½½½ C½½½½½½½½
M½½.
T½½.
M½½.
U½½½
Collector-Emitter Cut-Off Current
G a t e - E m i t t e r L e a k a g e C u rr e n t
コ レ ク タ ・ エ ミ ッ タ 間 ½ 和 電 圧
Collector-Emitter Saturation Voltage
し き い 値 電 圧
G ate-E mitter T hreshold V oltage
Input Capacitance
上 昇 時 間 Rise
スイッチング時間
S w i t c h in g T im e
Time
ターンオン時間 Turn-on Time
下 降 時 間 Fall
Time
ターンオフ時間 Turn-off Time
CES
GES
CE(sat)
GE(th)
½½½
½
½
½
½½
½
½
½
½½½
CE
= 600V,V
GE
= 0V
GE
= ±20V,V
CE
= 0V
= 200A,V
GE
= 15V
CE
= 5V,I
= 200mA
CE
= 10V,V
GE
= 0V,½= 1MH
CC
=
=
=
GE
=
300V
1.5Ω
3.6Ω
±15V
4.0
2.1
10,000
0.15
0.25
0.10
0.35
1.0
1.0
2.6
8.0
0.30
0.40
0.35
0.70
½A
μA
½F
μ½
□ フリーホイーリングダイオードの 特 性:
FREE WHEELING DIODE RATINGS
(at T
C
=25°C)
I½½½
S½½½½½
CHARACTERISTICS
(at T
j
=25°C)
V½½½½
U½½½
R½½½½
F orward
C urrent
C½½½½½½½½½½½½½
DC
1½½
FM
S½½½½½
T½½½ C½½½½½½½½
200
400
M½½.
T½½.
M½½.
U½½½
Peak Forward Voltage
Reverse Recovery Time
□ 熱
特 性
½
½½
= 200A,V
GE
= 0V
= 200A,V
GE
= -10V
½i/½t= 400A/μs
1.9
0.15
2.4
0.25
μ½
THERMAL CHARACTERISTICS
C½½½½½½½½½½½½½
S½½½½½
T½½½ C½½½½½½½½
M½½.
T½½.
M½½.
U½½½
T hermal I mpedance
IGBT
D iode
Rth(j-c)
Junction to Case
(Tcチップ直下での測定点)
0.16
0.38
℃/W
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