AT-32011 datasheet, PDF - EEWORLD Datasheet

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AT-32011: DescriptionLow Current, High Performance NPN Silicon Bipolar Transistor; File Size99KB，10 Pages; ManufacturerHP（Keysight）; Websitehttp://www.semiconductor.agilent.com/

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AT-32011 Overview

Low Current, High Performance NPN Silicon Bipolar Transistor

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Low Current, High Performance

NPN Silicon Bipolar Transistor

Technical Data

AT-32011

AT-32033

Features

• High Performance Bipolar

Transistor Optimized for

Low Current, Low Voltage

Operation

• 900 MHz Performance:

AT-32011: 1 dB NF, 14 dB G

AT-32033: 1 dB NF, 12.5 dB G

• Characterized for End-Of-

Life Battery Use (2.7 V)

• SOT-23 and SOT-143 SMT

Plastic Packages

• Tape-And-Reel Packaging

Option Available

[1]

Description

Hewlett Packard’s AT-32011 and

AT-32033 are high performance

NPN bipolar transistors that have

been optimized for maximum f

low voltage operation, making

them ideal for use in battery

powered applications in wireless

markets. The AT-32033 uses the

3 lead SOT-23, while the AT-320 11

places the same die in the higher

performance 4 lead SOT-143. Both

packages are industry standard,

and compatible with high volume

surface mount assembly

techniques.

The 3.2 micron emitter-to-emitter

pitch and reduced parasitic design

of these transistors yields

extremely high performance

products that can perform a

multiplicity of tasks. The

20 emitter finger interdigitated

geometry yields an easy to match

to and extremely fast transistor

with moderate power, low noise

resistance, and low operating

currents.

Optimized performance at 2.7 V

makes these devices ideal for use

in 900 MHz, 1.8 GHz, and 2.4 GHz

battery operated systems as an

LNA, gain stage, buffer, oscillator,

or active mixer. Typical amplifier

designs at 900 MHz yield 1.2 dB

noise figures with 12 dB or more

associated gain at a 2.7 V, 2 mA

bias, with noise performance

being relatively insensitive to

input match. High gain capability

at 1 V, 1 mA makes these devices a

good fit for 900 MHz pager

applications. Voltage breakdowns

are high enough for use at 5 volts.

The AT-3 series bipolar transistors

are fabricated using an optimized

version of Hewlett Packard’s

10 GHz f

, 30 GHz f

MAX

Self-

Aligned-Transistor (SAT) process.

The die are nitride passivated for

surface protection. Excellent

device uniformity, performance

and reliability are produced by the

use of ion-implantation, self-

alignment techniques, and gold

metalization in the fabrication of

these devices.

Outline Drawing

EMITTER COLLECTOR

320

BASE

EMITTER

SOT-143 (AT-32011)

COLLECTOR

320

BASE

EMITTER

SOT-23 (AT-32033)

Note:

1. Refer to “Tape-and-Reel Packaging for Semiconductor Devices.”

4-53

5965-8920E

AT-32011 Related Products

	AT-32011	AT-32011-TR1	AT-32011-BLK	AT-32033	AT-32033-BLK	AT-32033-TR1
Description	Low Current, High Performance NPN Silicon Bipolar Transistor	Low Current, High Performance NPN Silicon Bipolar Transistor	Low Current, High Performance NPN Silicon Bipolar Transistor	Low Current, High Performance NPN Silicon Bipolar Transistor	Low Current, High Performance NPN Silicon Bipolar Transistor	Low Current, High Performance NPN Silicon Bipolar Transistor
Is it Rohs certified?	-	incompatible	incompatible	-	incompatible	incompatible
Maker	-	HP（Keysight）	HP（Keysight）	-	HP（Keysight）	HP（Keysight）
Parts packaging code	-	SOT	SOT	-	SOT	SOT
package instruction	-	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	-	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	-	6	6	-	6	6
Reach Compliance Code	-	unknow	unknow	-	unknow	unknow
ECCN code	-	EAR99	EAR99	-	EAR99	EAR99
Other features	-	HIGH RELIABILITY, LOW NOISE	HIGH RELIABILITY, LOW NOISE	-	HIGH RELIABILITY, LOW NOISE	HIGH RELIABILITY, LOW NOISE
Maximum collector current (IC)	-	0.032 A	0.032 A	-	0.032 A	0.032 A
Collector-emitter maximum voltage	-	5.5 V	5.5 V	-	5.5 V	5.5 V
Configuration	-	SINGLE	SINGLE	-	SINGLE	SINGLE
Minimum DC current gain (hFE)	-	70	70	-	70	70
highest frequency band	-	S BAND	S BAND	-	S BAND	S BAND
JESD-30 code	-	R-PDSO-G4	R-PDSO-G4	-	R-PDSO-G3	R-PDSO-G3
JESD-609 code	-	e0	e0	-	e0	e0
Number of components	-	1	1	-	1	1
Number of terminals	-	4	4	-	3	3
Maximum operating temperature	-	150 °C	150 °C	-	150 °C	150 °C
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	-	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	-	NPN	NPN	-	NPN	NPN
Maximum power dissipation(Abs)	-	0.2 W	0.2 W	-	0.2 W	0.2 W
Certification status	-	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified
surface mount	-	YES	YES	-	YES	YES
Terminal surface	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	-	GULL WING	GULL WING	-	GULL WING	GULL WING
Terminal location	-	DUAL	DUAL	-	DUAL	DUAL
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
transistor applications	-	AMPLIFIER	AMPLIFIER	-	AMPLIFIER	AMPLIFIER
Transistor component materials	-	SILICON	SILICON	-	SILICON	SILICON

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