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AT-32033

Description
Low Current, High Performance NPN Silicon Bipolar Transistor
File Size99KB,10 Pages
ManufacturerHP(Keysight)
Websitehttp://www.semiconductor.agilent.com/
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AT-32033 Overview

Low Current, High Performance NPN Silicon Bipolar Transistor

Low Current, High Performance
NPN Silicon Bipolar Transistor
Technical Data
AT-32011
AT-32033
Features
• High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Operation
• 900 MHz Performance:
AT-32011: 1 dB NF, 14 dB G
A
AT-32033: 1 dB NF, 12.5 dB G
A
• Characterized for End-Of-
Life Battery Use (2.7 V)
• SOT-23 and SOT-143 SMT
Plastic Packages
• Tape-And-Reel Packaging
Option Available
[1]
Description
Hewlett Packard’s AT-32011 and
AT-32033 are high performance
NPN bipolar transistors that have
been optimized for maximum f
t
at
low voltage operation, making
them ideal for use in battery
powered applications in wireless
markets. The AT-32033 uses the
3 lead SOT-23, while the AT-320 11
places the same die in the higher
performance 4 lead SOT-143. Both
packages are industry standard,
and compatible with high volume
surface mount assembly
techniques.
The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of these transistors yields
extremely high performance
products that can perform a
multiplicity of tasks. The
20 emitter finger interdigitated
geometry yields an easy to match
to and extremely fast transistor
with moderate power, low noise
resistance, and low operating
currents.
Optimized performance at 2.7 V
makes these devices ideal for use
in 900 MHz, 1.8 GHz, and 2.4 GHz
battery operated systems as an
LNA, gain stage, buffer, oscillator,
or active mixer. Typical amplifier
designs at 900 MHz yield 1.2 dB
noise figures with 12 dB or more
associated gain at a 2.7 V, 2 mA
bias, with noise performance
being relatively insensitive to
input match. High gain capability
at 1 V, 1 mA makes these devices a
good fit for 900 MHz pager
applications. Voltage breakdowns
are high enough for use at 5 volts.
The AT-3 series bipolar transistors
are fabricated using an optimized
version of Hewlett Packard’s
10 GHz f
t
, 30 GHz f
MAX
Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
Outline Drawing
EMITTER COLLECTOR
320
BASE
EMITTER
SOT-143 (AT-32011)
COLLECTOR
320
BASE
EMITTER
SOT-23 (AT-32033)
Note:
1. Refer to “Tape-and-Reel Packaging for Semiconductor Devices.”
4-53
5965-8920E

AT-32033 Related Products

AT-32033 AT-32011 AT-32011-TR1 AT-32011-BLK AT-32033-BLK AT-32033-TR1
Description Low Current, High Performance NPN Silicon Bipolar Transistor Low Current, High Performance NPN Silicon Bipolar Transistor Low Current, High Performance NPN Silicon Bipolar Transistor Low Current, High Performance NPN Silicon Bipolar Transistor Low Current, High Performance NPN Silicon Bipolar Transistor Low Current, High Performance NPN Silicon Bipolar Transistor
Is it Rohs certified? - - incompatible incompatible incompatible incompatible
Maker - - HP(Keysight) HP(Keysight) HP(Keysight) HP(Keysight)
Parts packaging code - - SOT SOT SOT SOT
package instruction - - SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts - - 6 6 6 6
Reach Compliance Code - - unknow unknow unknow unknow
ECCN code - - EAR99 EAR99 EAR99 EAR99
Other features - - HIGH RELIABILITY, LOW NOISE HIGH RELIABILITY, LOW NOISE HIGH RELIABILITY, LOW NOISE HIGH RELIABILITY, LOW NOISE
Maximum collector current (IC) - - 0.032 A 0.032 A 0.032 A 0.032 A
Collector-emitter maximum voltage - - 5.5 V 5.5 V 5.5 V 5.5 V
Configuration - - SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) - - 70 70 70 70
highest frequency band - - S BAND S BAND S BAND S BAND
JESD-30 code - - R-PDSO-G4 R-PDSO-G4 R-PDSO-G3 R-PDSO-G3
JESD-609 code - - e0 e0 e0 e0
Number of components - - 1 1 1 1
Number of terminals - - 4 4 3 3
Maximum operating temperature - - 150 °C 150 °C 150 °C 150 °C
Package body material - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type - - NPN NPN NPN NPN
Maximum power dissipation(Abs) - - 0.2 W 0.2 W 0.2 W 0.2 W
Certification status - - Not Qualified Not Qualified Not Qualified Not Qualified
surface mount - - YES YES YES YES
Terminal surface - - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form - - GULL WING GULL WING GULL WING GULL WING
Terminal location - - DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications - - AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials - - SILICON SILICON SILICON SILICON
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