Low Current, High Performance
NPN Silicon Bipolar Transistor
Technical Data
AT-32011
AT-32033
Features
• High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Operation
• 900 MHz Performance:
AT-32011: 1 dB NF, 14 dB G
A
AT-32033: 1 dB NF, 12.5 dB G
A
• Characterized for End-Of-
Life Battery Use (2.7 V)
• SOT-23 and SOT-143 SMT
Plastic Packages
• Tape-And-Reel Packaging
Option Available
[1]
Description
Hewlett Packard’s AT-32011 and
AT-32033 are high performance
NPN bipolar transistors that have
been optimized for maximum f
t
at
low voltage operation, making
them ideal for use in battery
powered applications in wireless
markets. The AT-32033 uses the
3 lead SOT-23, while the AT-320 11
places the same die in the higher
performance 4 lead SOT-143. Both
packages are industry standard,
and compatible with high volume
surface mount assembly
techniques.
The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of these transistors yields
extremely high performance
products that can perform a
multiplicity of tasks. The
20 emitter finger interdigitated
geometry yields an easy to match
to and extremely fast transistor
with moderate power, low noise
resistance, and low operating
currents.
Optimized performance at 2.7 V
makes these devices ideal for use
in 900 MHz, 1.8 GHz, and 2.4 GHz
battery operated systems as an
LNA, gain stage, buffer, oscillator,
or active mixer. Typical amplifier
designs at 900 MHz yield 1.2 dB
noise figures with 12 dB or more
associated gain at a 2.7 V, 2 mA
bias, with noise performance
being relatively insensitive to
input match. High gain capability
at 1 V, 1 mA makes these devices a
good fit for 900 MHz pager
applications. Voltage breakdowns
are high enough for use at 5 volts.
The AT-3 series bipolar transistors
are fabricated using an optimized
version of Hewlett Packard’s
10 GHz f
t
, 30 GHz f
MAX
Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
Outline Drawing
EMITTER COLLECTOR
320
BASE
EMITTER
SOT-143 (AT-32011)
COLLECTOR
320
BASE
EMITTER
SOT-23 (AT-32033)
Note:
1. Refer to “Tape-and-Reel Packaging for Semiconductor Devices.”
4-53
5965-8920E
AT-32011, AT-32033 Absolute Maximum Ratings
Symbol
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
[2, 3]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum
[1]
1.5
11
5.5
32
200
150
-65 to 150
Thermal Resistance
[2]
:
θ
jc
= 550
°C/W
Notes:
1. Operation of this device above any one
of these parameters may cause permanent
damage.
2. T
Mounting Surface
= 25°C.
3. Derate at 1.82 mW/°C for T
C
> 40°C.
Electrical Specifications, T
A
= 25
°
C
AT-32011
Symbol
NF
G
A
h
FE
I
CBO
I
EBO
Parameters and Test Conditions
Noise Figure
V
CE
= 2.7 V, I
C
= 2 mA
Associated Gain
V
CE
= 2.7 V, I
C
= 2 mA
f = 0.9 GHz
f = 0.9 GHz
Units
dB
dB
–
µA
µA
12.5
[1]
70
Min.
Typ.
1.0
[1]
14
[1]
300
0.2
1.5
Max.
1.3
[1]
11
[2]
70
Min.
AT-32033
Typ.
1.0
[2]
12.5
[2]
300
0.2
1.5
Max.
1.3
[2]
Forward Current Transfer Ratio
V
CE
= 2.7 V, I
C
= 2 mA
Collector Cutoff Current
V
CB
= 3 V
Emitter Cutoff Current
V
EB
= 1 V
Notes:
1. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB;
output loss = 0.3 dB.
2. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB;
output loss = 0.3 dB.
1000 pF
V
BB
W = 10 L = 1870
W = 30
L = 60
W = 30
L = 60
V
CC
W = 10 L = 1870
1000 pF
CKT A: 25
Ω
CKT B: 5
Ω
RF OUT
RF IN
W = 10
CKT A: L = 380
CKT B: L = 380
TEST CIRCUIT
BOARD MATL = 0.062" FR-4 (ε = 4.8)
CKT A: W = 30 L = 50 x 2
CKT B: W = 30 L = 60
W = 10
CKT A: L = 105
CKT B: L = 850
NOT TO SCALE
DIMENSIONS IN MILS
Figure 1. Test Circuit for Noise Figure and Associated Gain.
This circuit is a compromise match between best noise figure, best gain, stability, and a practical
synthesizable match.
4-54
Characterization Information, T
A
= 25
°
C
AT-32011
Symbol
P
1dB
G
1dB
IP
3
|S
21
|
E2
Parameters and Test Conditions
Power at 1 dB Gain Compression (opt tuning)
V
CE
= 2.7 V, I
C
= 20 mA
f = 0.9 GHz
Gain at 1 dB Gain Compression (opt tuning)
V
CE
= 2.7 V, I
C
= 20 mA
f = 0.9 GHz
Output Third Order Intercept Point (opt tuning)
V
CE
= 2.7 V, I
C
= 20 mA
f = 0.9 GHz
Gain in 50
Ω
System
V
CE
= 2.7 V, I
C
= 2 mA
f = 0.9 GHz
Units
dBm
dB
dBm
dB
Typ.
13
16.5
24
13
AT-32033
Typ.
13
15
24
11.5
2
25
20
20
NOISE FIGURE (dB)
1.5
Ga (dB)
Ga (dB)
15
15
1
1 mA
2 mA
5 mA
10 mA
20 mA
10
1 mA
2 mA
5 mA
10 mA
20 mA
0
0.5
1.0
1.5
2.0
2.5
10
1 mA
2 mA
5 mA
10 mA
20 mA
0
0.5
1.0
1.5
2.0
2.5
0.5
5
5
0
0
0.5
1
1.5
2
2.5
0
0
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 2. AT-32011 and AT-32033
Minimum Noise Figure vs. Frequency
and Current at V
CE
= 2.7 V.
Figure 3. AT-32011 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at V
CE
= 2.7 V.
Figure 4. AT-32033 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at V
CE
= 2.7 V.
20
20
20
15
15
15
G 1dB (dB)
2 mA
5 mA
10 mA
20 mA
0
0.5
1.0
1.5
2.0
2.5
P 1dB (dBm)
10
G 1dB (dB)
10
10
5
2 mA
5 mA
10 mA
20 mA
0
0.5
1.0
1.5
2.0
2.5
5
5
0
2 mA
5 mA
10 mA
20 mA
0
0.5
1.0
1.5
2.0
2.5
-5
0
0
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 5. AT-32011 and AT-32033
Power at 1 dB Gain Compression vs.
Frequency and Current at V
CE
= 2.7 V.
Figure 6. AT-32011 1 dB Compressed
Gain vs. Frequency and Current at
V
CE
= 2.7 V.
Figure 7. AT-32033 1 dB Compressed
Gain vs. Frequency and Current at
V
CE
= 2.7 V.
4-55
AT-32011, AT-32033 Typical Performance
20
20
20
15
15
15
G 1dB (dB)
2 mA
5 mA
10 mA
20 mA
0
0.5
1.0
1.5
2.0
2.5
P 1dB (dBm)
10
G 1dB (dB)
10
10
5
2 mA
5 mA
10 mA
20 mA
0
0.5
1.0
1.5
2.0
2.5
0
5
5
2 mA
5 mA
10 mA
20 mA
0
0.5
1.0
1.5
2.0
2.5
-5
0
0
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 8. AT-32011 and AT-32033
Power at 1 dB Gain Compression vs.
Frequency and Current at V
CE
= 5 V.
Figure 9. AT-32011 1 dB Compressed
Gain vs. Frequency and Current at
V
CE
= 5 V.
Figure 10. AT-32033 1 dB Compressed
Gain vs. Frequency and Current at
V
CE
= 5 V.
10
7.5
5
2.5
0
-2.5
-5
G 1dB (dB)
2 mA
5 mA
20
20
15
P 1dB (dBm)
G 1dB (dB)
15
10
10
5
2 mA
5 mA
5
2 mA
5 mA
0
0.5
1.0
1.5
2.0
2.5
0
0
0.5
1.0
1.5
2.0
2.5
0
0
0.5
1.0
1.5
2.0
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 11. AT-32011 and AT-32033
Power at 1 dB Gain Compression vs.
Frequency and Current at V
CE
= 1 V.
Figure 12. AT-32011 1 dB Compressed
Gain vs. Frequency and Current at
V
CE
= 1 V.
Figure 13. AT-32033 1 dB Compressed
Gain vs. Frequency and Current at
V
CE
= 1 V.
25
2.5
25
2.5
25
20
Ga
2.0
20
2.0
20
NOISE FIGURE (dB)
Ga
10
NF
5
0.5
1.0
10
NF
5
IP3 (dBm)
Ga (dBm)
Ga (dBm)
15
1.5
15
1.5
NOISE FIGURE (dB)
15
1.0
10
2 mA
5 mA
10 mA
20 mA
0
0.5
1.0
1.5
2.0
2.5
0.5
5
0
-50
0
50
0
100
0
-50
0
50
0
100
0
TEMPERATURE (°C)
TEMPERATURE (°C)
FREQUENCY (MHz)
Figure 14. AT-32011 Noise Figure and
Associated Gain at V
CE
= 2 .7 V,
I
C
= 2 mA vs. Temperature in Test
Circuit, Figure 1. (Circuit Losses
De-embedded).
Figure 15. AT-32033 Noise Figure and
Associated Gain at V
CE
= 2 .7 V,
I
C
= 2 mA vs. Temperature in Test
Circuit, Figure 1. (Circuit Losses
De-embedded).
Figure 16. AT-32011 and AT-32033
Third Order Intercept vs. Frequency
and Bias at V
CE
= 2 .7 V, with Optimal
Tuning.
4-56
AT-32011 Typical Scattering Parameters,
Common Emitter, Zo = 50
Ω
Freq.
GHz
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
Mag
0.97
0.88
0.78
0.75
0.67
0.63
0.61
0.59
0.59
0.63
0.69
S
11
Ang
-11
-52
-86
-94
-127
-144
-155
-175
157
120
94
dB
11.09
10.13
8.67
8.35
6.35
5.25
4.75
3.48
1.77
-0.39
-2.39
S
21
Mag
3.59
3.21
2.71
2.62
2.08
1.83
1.73
1.49
1.23
0.96
0.76
Ang
172
141
117
112
89
77
70
57
40
18
0
dB
-33.55
-20.85
-17.62
-17.27
-16.30
-16.28
-16.42
-16.86
-17.89
-18.40
-15.60
S
12
Mag
0.021
0.091
0.132
0.137
0.153
0.154
0.151
0.144
0.128
0.120
0.166
25
V
CE
= 1 V, I
C
= 1 mA
S
22
Ang
83
59
41
37
23
16
13
9
8
23
35
Mag
0.99
0.92
0.82
0.79
0.71
0.67
0.65
0.62
0.61
0.59
0.59
Ang
-5
-21
-32
-35
-45
-50
-53
-59
-68
-84
-104
AT-32011 Typical Noise Parameters,
Common Emitter, Zo = 50
Ω,
1 V, I
C
= 1 mA
Freq.
GHz
0.5
[1]
0.9
1.8
2.4
F
min
dB
0.42
0.71
1.37
1.80
Mag
0.79
0.70
0.53
0.55
GAIN (dB)
Γ
opt
Ang
26
54
119
158
15
R
n
–
0.44
0.35
0.18
0.08
MSG
MAG
5
S21
-5
0
1
2
3
4
5
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
FREQUENCY (GHz)
Figure 17. AT-32011 Gains vs.
Frequency at V
CE
= 1 V, I
C
= 1 mA.
AT-32033 Typical Scattering Parameters,
Common Emitter, Zo = 50
Ω
Freq.
GHz
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
Mag
0.97
0.81
0.61
0.56
0.41
0.36
0.34
0.34
0.38
0.46
0.51
S
11
Ang
-11
-52
-87
-95
-136
-160
-177
154
119
81
56
dB
11.09
9.88
8.07
7.65
5.43
4.30
3.74
2.49
0.96
-0.84
-1.90
S
21
Mag
3.58
3.12
2.53
2.41
1.87
1.64
1.54
1.33
1.12
0.91
0.80
Ang
170
134
107
101
77
66
59
47
32
15
5
dB
-32.75
-20.30
-17.57
-17.24
-16.61
-16.36
-16.05
-15.10
-12.77
-8.68
-5.68
S
12
Mag
0.023
0.097
0.132
0.137
0.148
0.152
0.158
0.176
0.230
0.368
0.520
25
V
CE
= 1 V, I
C
= 1 mA
S
22
Ang
83
60
46
44
39
41
44
49
55
50
37
Mag
0.99
0.90
0.78
0.76
0.68
0.65
0.63
0.61
0.59
0.56
0.51
Ang
-5
-22
-33
-35
-42
-46
-49
-55
-65
-87
-114
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50
Ω,
1 V, I
C
= 1 mA
Freq.
GHz
0.5
[1]
0.9
1.8
2.4
F
min
dB
0.42
0.71
1.37
1.80
Mag
0.87
0.73
0.42
0.50
GAIN (dB)
Γ
opt
Ang
25
55
143
-162
R
n
–
0.48
0.34
0.11
0.07
15
MSG
MAG
5
S21
MSG
-5
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
0
1
2
3
4
5
FREQUENCY (GHz)
4-57
Figure 18. AT-32033 Gains vs.
Frequency at V
CE
= 1 V, I
C
= 1 mA.
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