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EN25Q32B-104HEP

Description
Flash, 4MX8, PDSO8, 0.208 INCH, ROHS COMPLIANT, SOP-8
Categorystorage    storage   
File Size1MB,57 Pages
ManufacturerEon
Websitehttp://www.essi.com.tw/
Download Datasheet Parametric Compare View All

EN25Q32B-104HEP Overview

Flash, 4MX8, PDSO8, 0.208 INCH, ROHS COMPLIANT, SOP-8

EN25Q32B-104HEP Parametric

Parameter NameAttribute value
MakerEon
package instructionSOP,
Reach Compliance Codeunknow
ECCN code3A991.B.1.A
EN25Q32B
EN25Q32B
32 Megabit Serial Flash Memory with 4Kbyte Uniform Sector
FEATURES
Single power supply operation
- Full voltage range: 2.7-3.6 volt
Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3
32 M-bit Serial Flash
- 32 M-bit/4096 K-byte/16384 pages
- 256 bytes per programmable page
-
-
-
-
-
-
Standard, Dual or Quad SPI
Standard SPI: CLK, CS#, DI, DO, WP#
Dual SPI: CLK, CS#, DQ
0
, DQ
1
, WP#
Quad SPI: CLK, CS#, DQ
0
, DQ
1
, DQ
2
, DQ
3
High performance
104MHz clock rate for one data bit
80MHz clock rate for two data bits
50MHz clock rate for four data bits
Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
-
-
-
-
High performance program/erase speed
Page program time: 1.3ms typical
Sector erase time: 90ms typical
Block erase time 500ms typical
Chip erase time: 25 seconds typical
Lockable 512 byte OTP security sector
Minimum 100K endurance cycle
-
-
-
-
-
-
-
Package Options
8 pins SOP 200mil body width
8 contact VDFN (5x6mm)
8 contact VDFN (6x8mm)
8 pins PDIP
16 pins SOP 300mil body width
24 balls TFBGA (6x8mm)
All Pb-free packages are RoHS compliant
Low power consumption
- 12 mA typical active current
- 1
μA
typical power down current
-
-
-
Uniform Sector Architecture:
1024 sectors of 4-Kbyte
64 blocks of 64-Kbyte
Any sector or block can be erased individually
Industrial and Extended temperature Range
GENERAL DESCRIPTION
The EN25Q32B is a 32 Megabit (4096K-byte) Serial Flash memory, with advanced write protection
mechanisms. The EN25Q32B supports the standard Serial Peripheral Interface (SPI), and a high
performance Dual output as well as Quad I/O using SPI pins: Serial Clock, Chip Select, Serial DQ
0
(DI),
DQ
1
(DO), DQ
2
(WP#) and DQ
3
(NC). SPI clock frequencies of up to 80MHz are supported allowing
equivalent clock rates of 160MHz for Dual Output when using the Dual Output Fast Read instructions,
and SPI clock frequencies of up to 50MHz are supported allowing equivalent clock rates of 200MHz for
Quad Output when using the Quad Output Fast Read instructions. The memory can be programmed 1
to 256 bytes at a time, using the Page Program instruction.
The EN25Q32B is designed to allow either single
Sector/Block
at a time or full chip erase operation. The
EN25Q32B can be configured to protect part of the memory as the software protected mode. The
device can sustain a minimum of 100K program/erase cycles on each sector
or block
.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
©2013 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. H, Issue Date: 2013/04/29

EN25Q32B-104HEP Related Products

EN25Q32B-104HEP EN25Q32B-104BBEP EN25Q32B-104FEP EN25Q32B-104YEP EN25Q32B-104YIP EN25Q32B-104QEP
Description Flash, 4MX8, PDSO8, 0.208 INCH, ROHS COMPLIANT, SOP-8 Flash, 4MX8, PBGA24, 6 X 8 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, TFBGA-24 Flash, 4MX8, PDSO16, 0.300 INCH, ROHS COMPLIANT, SOP-16 Flash, 4MX8, PDSO8, 6 X 8 MM, ROHS COMPLIANT, VDFN-8 Flash, 4MX8, PDSO8, 6 X 8 MM, ROHS COMPLIANT, VDFN-8 Flash, 4MX8, PDIP8, ROHS COMPLIANT, PLASTIC, DIP-8
Maker Eon Eon Eon Eon Eon Eon
package instruction SOP, 6 X 8 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, TFBGA-24 0.300 INCH, ROHS COMPLIANT, SOP-16 6 X 8 MM, ROHS COMPLIANT, VDFN-8 HVSON, SOLCC8,.3 ROHS COMPLIANT, PLASTIC, DIP-8
Reach Compliance Code unknow unknow unknow unknow unknow unknow
ECCN code 3A991.B.1.A 3A991.B.1.A 3A991.B.1.A 3A991.B.1.A 3A991.B.1.A 3A991.B.1.A
Maximum clock frequency (fCLK) - 104 MHz 104 MHz 104 MHz 104 MHz 104 MHz
JESD-30 code - R-PBGA-B24 R-PDSO-G16 R-PDSO-N8 R-PDSO-N8 R-PDIP-T8
length - 8 mm 10.3 mm 8 mm 8 mm 9.271 mm
memory density - 33554432 bi 33554432 bi 33554432 bi 33554432 bi 33554432 bi
Memory IC Type - FLASH FLASH FLASH FLASH FLASH
memory width - 8 8 8 8 8
Number of functions - 1 1 1 1 1
Number of terminals - 24 16 8 8 8
word count - 4194304 words 4194304 words 4194304 words 4194304 words 4194304 words
character code - 4000000 4000000 4000000 4000000 4000000
Operating mode - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature - 105 °C 105 °C 105 °C 85 °C 105 °C
Minimum operating temperature - -40 °C -40 °C -40 °C -40 °C -40 °C
organize - 4MX8 4MX8 4MX8 4MX8 4MX8
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code - TBGA SOP HVSON HVSON DIP
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - GRID ARRAY, THIN PROFILE SMALL OUTLINE SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE IN-LINE
Parallel/Serial - SERIAL SERIAL SERIAL SERIAL SERIAL
Programming voltage - 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
Maximum seat height - 1.2 mm 2.65 mm 0.8 mm 0.8 mm 5.334 mm
Maximum supply voltage (Vsup) - 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) - 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
Nominal supply voltage (Vsup) - 3 V 3 V 3 V 3 V 3 V
surface mount - YES YES YES YES NO
technology - CMOS CMOS CMOS CMOS CMOS
Temperature level - INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal form - BALL GULL WING NO LEAD NO LEAD THROUGH-HOLE
Terminal pitch - 1 mm 1.27 mm 1.27 mm 1.27 mm 2.54 mm
Terminal location - BOTTOM DUAL DUAL DUAL DUAL
type - NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE
width - 6 mm 7.5 mm 6 mm 6 mm 7.62 mm
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