EN25Q32B-104YIP datasheet, PDF

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EN25Q32B-104YIP: DescriptionFlash, 4MX8, PDSO8, 6 X 8 MM, ROHS COMPLIANT, VDFN-8; Categorystorage storage; File Size1MB，57 Pages; ManufacturerEon; Websitehttp://www.essi.com.tw/; Environmental Compliance

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EN25Q32B-104YIP Overview

Flash, 4MX8, PDSO8, 6 X 8 MM, ROHS COMPLIANT, VDFN-8

EN25Q32B-104YIP Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Eon
package instruction	HVSON, SOLCC8,.3
Reach Compliance Code	unknow
ECCN code	3A991.B.1.A
Maximum clock frequency (fCLK)	104 MHz
Data retention time - minimum	20
Durability	100000 Write/Erase Cycles
JESD-30 code	R-PDSO-N8
length	8 mm
memory density	33554432 bi
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of terminals	8
word count	4194304 words
character code	4000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	4MX8
Package body material	PLASTIC/EPOXY
encapsulated code	HVSON
Encapsulate equivalent code	SOLCC8,.3
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Parallel/Serial	SERIAL
power supply	3/3.3 V
Programming voltage	2.7 V
Certification status	Not Qualified
Maximum seat height	0.8 mm
Serial bus type	SPI
Maximum standby current	0.00002 A
Maximum slew rate	0.025 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
type	NOR TYPE
width	6 mm
write protect	HARDWARE/SOFTWARE

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EN25Q32B

32 Megabit Serial Flash Memory with 4Kbyte Uniform Sector

FEATURES

•

Single power supply operation

- Full voltage range: 2.7-3.6 volt

•

Serial Interface Architecture

- SPI Compatible: Mode 0 and Mode 3

•

32 M-bit Serial Flash

- 32 M-bit/4096 K-byte/16384 pages

- 256 bytes per programmable page

•

Standard, Dual or Quad SPI

Standard SPI: CLK, CS#, DI, DO, WP#

Dual SPI: CLK, CS#, DQ

, DQ

, WP#

Quad SPI: CLK, CS#, DQ

, DQ

High performance

104MHz clock rate for one data bit

80MHz clock rate for two data bits

50MHz clock rate for four data bits

•

Software and Hardware Write Protection:

- Write Protect all or portion of memory via

software

- Enable/Disable protection with WP# pin

•

High performance program/erase speed

Page program time: 1.3ms typical

Sector erase time: 90ms typical

Block erase time 500ms typical

Chip erase time: 25 seconds typical

•

Lockable 512 byte OTP security sector

•

Minimum 100K endurance cycle

•

Package Options

8 pins SOP 200mil body width

8 contact VDFN (5x6mm)

8 contact VDFN (6x8mm)

8 pins PDIP

16 pins SOP 300mil body width

24 balls TFBGA (6x8mm)

All Pb-free packages are RoHS compliant

•

Low power consumption

- 12 mA typical active current

- 1

μA

typical power down current

•

Uniform Sector Architecture:

1024 sectors of 4-Kbyte

64 blocks of 64-Kbyte

Any sector or block can be erased individually

•

Industrial and Extended temperature Range

GENERAL DESCRIPTION

The EN25Q32B is a 32 Megabit (4096K-byte) Serial Flash memory, with advanced write protection

mechanisms. The EN25Q32B supports the standard Serial Peripheral Interface (SPI), and a high

performance Dual output as well as Quad I/O using SPI pins: Serial Clock, Chip Select, Serial DQ

(DI),

(DO), DQ

(WP#) and DQ

(NC). SPI clock frequencies of up to 80MHz are supported allowing

equivalent clock rates of 160MHz for Dual Output when using the Dual Output Fast Read instructions,

and SPI clock frequencies of up to 50MHz are supported allowing equivalent clock rates of 200MHz for

Quad Output when using the Quad Output Fast Read instructions. The memory can be programmed 1

to 256 bytes at a time, using the Page Program instruction.

The EN25Q32B is designed to allow either single

Sector/Block

at a time or full chip erase operation. The

EN25Q32B can be configured to protect part of the memory as the software protected mode. The

device can sustain a minimum of 100K program/erase cycles on each sector

or block

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

www.eonssi.com

Rev. H, Issue Date: 2013/04/29

EN25Q32B-104YIP Related Products

	EN25Q32B-104YIP	EN25Q32B-104BBEP	EN25Q32B-104FEP	EN25Q32B-104HEP	EN25Q32B-104YEP	EN25Q32B-104QEP
Description	Flash, 4MX8, PDSO8, 6 X 8 MM, ROHS COMPLIANT, VDFN-8	Flash, 4MX8, PBGA24, 6 X 8 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, TFBGA-24	Flash, 4MX8, PDSO16, 0.300 INCH, ROHS COMPLIANT, SOP-16	Flash, 4MX8, PDSO8, 0.208 INCH, ROHS COMPLIANT, SOP-8	Flash, 4MX8, PDSO8, 6 X 8 MM, ROHS COMPLIANT, VDFN-8	Flash, 4MX8, PDIP8, ROHS COMPLIANT, PLASTIC, DIP-8
Maker	Eon	Eon	Eon	Eon	Eon	Eon
package instruction	HVSON, SOLCC8,.3	6 X 8 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, TFBGA-24	0.300 INCH, ROHS COMPLIANT, SOP-16	SOP,	6 X 8 MM, ROHS COMPLIANT, VDFN-8	ROHS COMPLIANT, PLASTIC, DIP-8
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
ECCN code	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A
Maximum clock frequency (fCLK)	104 MHz	104 MHz	104 MHz	-	104 MHz	104 MHz
JESD-30 code	R-PDSO-N8	R-PBGA-B24	R-PDSO-G16	-	R-PDSO-N8	R-PDIP-T8
length	8 mm	8 mm	10.3 mm	-	8 mm	9.271 mm
memory density	33554432 bi	33554432 bi	33554432 bi	-	33554432 bi	33554432 bi
Memory IC Type	FLASH	FLASH	FLASH	-	FLASH	FLASH
memory width	8	8	8	-	8	8
Number of functions	1	1	1	-	1	1
Number of terminals	8	24	16	-	8	8
word count	4194304 words	4194304 words	4194304 words	-	4194304 words	4194304 words
character code	4000000	4000000	4000000	-	4000000	4000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	105 °C	105 °C	-	105 °C	105 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-	-40 °C	-40 °C
organize	4MX8	4MX8	4MX8	-	4MX8	4MX8
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	HVSON	TBGA	SOP	-	HVSON	DIP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	GRID ARRAY, THIN PROFILE	SMALL OUTLINE	-	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	IN-LINE
Parallel/Serial	SERIAL	SERIAL	SERIAL	-	SERIAL	SERIAL
Programming voltage	2.7 V	2.7 V	2.7 V	-	2.7 V	2.7 V
Maximum seat height	0.8 mm	1.2 mm	2.65 mm	-	0.8 mm	5.334 mm
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	-	3.6 V	3.6 V
Minimum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V	-	2.7 V	2.7 V
Nominal supply voltage (Vsup)	3 V	3 V	3 V	-	3 V	3 V
surface mount	YES	YES	YES	-	YES	NO
technology	CMOS	CMOS	CMOS	-	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	-	INDUSTRIAL	INDUSTRIAL
Terminal form	NO LEAD	BALL	GULL WING	-	NO LEAD	THROUGH-HOLE
Terminal pitch	1.27 mm	1 mm	1.27 mm	-	1.27 mm	2.54 mm
Terminal location	DUAL	BOTTOM	DUAL	-	DUAL	DUAL
type	NOR TYPE	NOR TYPE	NOR TYPE	-	NOR TYPE	NOR TYPE
width	6 mm	6 mm	7.5 mm	-	6 mm	7.62 mm

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