EN25Q32B
EN25Q32B
32 Megabit Serial Flash Memory with 4Kbyte Uniform Sector
FEATURES
•
Single power supply operation
- Full voltage range: 2.7-3.6 volt
•
Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3
•
32 M-bit Serial Flash
- 32 M-bit/4096 K-byte/16384 pages
- 256 bytes per programmable page
•
-
-
-
•
-
-
-
Standard, Dual or Quad SPI
Standard SPI: CLK, CS#, DI, DO, WP#
Dual SPI: CLK, CS#, DQ
0
, DQ
1
, WP#
Quad SPI: CLK, CS#, DQ
0
, DQ
1
, DQ
2
, DQ
3
High performance
104MHz clock rate for one data bit
80MHz clock rate for two data bits
50MHz clock rate for four data bits
•
Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
•
-
-
-
-
High performance program/erase speed
Page program time: 1.3ms typical
Sector erase time: 90ms typical
Block erase time 500ms typical
Chip erase time: 25 seconds typical
•
Lockable 512 byte OTP security sector
•
Minimum 100K endurance cycle
•
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-
-
-
-
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Package Options
8 pins SOP 200mil body width
8 contact VDFN (5x6mm)
8 contact VDFN (6x8mm)
8 pins PDIP
16 pins SOP 300mil body width
24 balls TFBGA (6x8mm)
All Pb-free packages are RoHS compliant
•
Low power consumption
- 12 mA typical active current
- 1
μA
typical power down current
•
-
-
-
Uniform Sector Architecture:
1024 sectors of 4-Kbyte
64 blocks of 64-Kbyte
Any sector or block can be erased individually
•
Industrial and Extended temperature Range
GENERAL DESCRIPTION
The EN25Q32B is a 32 Megabit (4096K-byte) Serial Flash memory, with advanced write protection
mechanisms. The EN25Q32B supports the standard Serial Peripheral Interface (SPI), and a high
performance Dual output as well as Quad I/O using SPI pins: Serial Clock, Chip Select, Serial DQ
0
(DI),
DQ
1
(DO), DQ
2
(WP#) and DQ
3
(NC). SPI clock frequencies of up to 80MHz are supported allowing
equivalent clock rates of 160MHz for Dual Output when using the Dual Output Fast Read instructions,
and SPI clock frequencies of up to 50MHz are supported allowing equivalent clock rates of 200MHz for
Quad Output when using the Quad Output Fast Read instructions. The memory can be programmed 1
to 256 bytes at a time, using the Page Program instruction.
The EN25Q32B is designed to allow either single
Sector/Block
at a time or full chip erase operation. The
EN25Q32B can be configured to protect part of the memory as the software protected mode. The
device can sustain a minimum of 100K program/erase cycles on each sector
or block
.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
©2013 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. H, Issue Date: 2013/04/29
EN25Q32B
Figure.1 CONNECTION DIAGRAMS
CS#
DO (DQ
1
)
WP# (DQ
2
)
VSS
1
2
3
4
8
7
6
5
VCC
NC (DQ
3
)
CLK
DI (DQ
0
)
8 - LEAD SOP / PDIP
CS#
DO (DQ
1
)
WP# (DQ
2
)
VSS
1
2
3
4
8
7
6
5
VCC
NC (DQ
3
)
CLK
DI (DQ
0
)
8 - LEAD VDFN
16 - LEAD SOP
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
2
©2013 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. H, Issue Date: 2013/04/29
EN25Q32B
Top View, Balls Facing Down
24 - Ball TFBGA
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
3
©2013 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. H, Issue Date: 2013/04/29
EN25Q32B
Figure 2. BLOCK DIAGRAM
Note:
1. DQ
0
and DQ
1
are used for Dual and Quad instructions.
2. DQ
0
~ DQ
3
are used for Quad instructions.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
4
©2013 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. H, Issue Date: 2013/04/29
EN25Q32B
Table 1. Pin Names
Symbol
CLK
DI (DQ
0
)
DO (DQ
1
)
CS#
WP# (DQ
2
)
NC(DQ
3
)
Vcc
Vss
NC
Pin Name
Serial Clock Input
Serial Data Input (Data Input Output 0)
*1
*1
Serial Data Output (Data Input Output 1)
Chip Enable
Write Protect (Data Input Output 2)
Not Connect (Data Input Output 3)
Supply Voltage (2.7-3.6V)
Ground
No Connect
*2
*2
Note:
1. DQ
0
and DQ
1
are used for Dual and Quad instructions.
2. DQ
0
~ DQ
3
are used for Quad instructions.
SIGNAL DESCRIPTION
Serial Data Input, Output and IOs (DI, DO and DQ
0
, DQ
1
, DQ
2
, DQ
3
)
The EN25Q32B support standard SPI, Dual SPI and Quad SPI operation. Standard SPI instructions
use the unidirectional DI (input) pin to serially write instructions, addresses or data to the device on the
rising edge of the Serial Clock (CLK) input pin. Standard SPI also uses the unidirectional DO (output) to
read data or status from the device on the falling edge CLK.
Dual and Quad SPI instruction use the bidirectional IO pins to serially write instruction, addresses or
data to the device on the rising edge of CLK and read data or status from the device on the falling edge
of CLK.
Serial Clock (CLK)
The SPI Serial Clock Input (CLK) pin provides the timing for serial input and output operations. ("See
SPI Mode")
Chip Select (CS#)
The SPI Chip Select (CS#) pin enables and disables device operation. When CS# is high the device is
deselected and the Serial Data Output (DO, or DQ
0
, DQ
1
, DQ
2
and DQ
3
) pins are at high impedance.
When deselected, the devices power consumption will be at standby levels unless an internal erase,
program or status register cycle is in progress. When CS# is brought low the device will be selected,
power consumption will increase to active levels and instructions can be written to and data read from
the device. After power-up, CS# must transition from high to low before a new instruction will be
accepted.
Write Protect (WP#)
The Write Protect (WP#) pin can be used to prevent the Status Register from being written. Used in
conjunction with the Status Register’s Block Protect (BP0, BP1, BP2 and BP3) bits and Status Register
Protect (SRP) bits, a portion or the entire memory array can be hardware protected. The WP# function
is only available for standard SPI and Dual SPI operation, when during Quad SPI, this pin is the Serial
Data IO (DQ
2
) for Quad I/O operation.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
5
©2013 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. H, Issue Date: 2013/04/29
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