CCD Sensor, 512 Horiz pixels, 58 Vert pixels, 14-18V, Rectangular, Through Hole Mount, CERAMIC, DIP-24
S7030-0906N Parametric
Parameter Name
Attribute value
Is it Rohs certified?
conform to
Maker
Hamamatsu
Reach Compliance Code
unknow
array type
LINEAR
Dynamic Range
101.93 dB
horizontal pixels
512
shell
CERAMIC
Installation features
THROUGH HOLE MOUNT
Maximum operating temperature
30 °C
Minimum operating temperature
-50 °C
Output range
14-18V
Output type
ANALOG VOLTAGE
Package Shape/Form
RECTANGULAR
Pixel size
24X24 µm
Sensor/temperature sensor type
IMAGE SENSOR,CCD
Spectral response(nm)
200-1100
surface mount
NO
Termination type
SOLDER
vertical pixels
58
S7030-0906N Preview
IMAGE SENSOR
CCD area image sensor
S7030/S7031 series
Back-thinned FFT-CCD
S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using
the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This
makes S7030/S7031 series ideally suited for use in spectrophotometry. The binning operation offers significant improvement in S/N and signal
processing speed compared with conventional methods by which signals are digitally added by an external circuit. S7030/S7031 series also
features low noise and low dark signal (MPP mode operation). This enables low-light-level detection and long integration time, thus achieving a
wide dynamic range.
S7030/S7031 series has an effective pixel size of 24 × 24 µm and is available in image areas ranging from 12.288 (H) × 1.392(V) mm
2
(512 × 58
pixels) up to a large image area of 24.576 (H) × 6.000 (V) mm
2
(1024 × 250 pixels).
Features
Applications
l
Non-cooled type: S7030 series
One-stage TE-cooled type: S7031 series
l
Pixel size: 24 × 24 µm
l
Line, pixel binning
l
Greater than 90 % quantum efficiency at peak sensitivity
wavelength
l
Wide spectral response range
l
Low readout noise
l
Wide dynamic range
l
MPP operation
l
High UV sensitivity with good stability
s
Selection guide
Type No.
S7030-0906
S7030-0907
S7030-0908
S7030-1006
S7030-1007
S7030-1008
S7031-0906S
S7031-0907S
S7031-0908S
S7031-1006S
S7031-1007S
S7031-1008S
Cooling
Number of total
pixels
532 × 64
532 × 128
532 × 256
1044 × 64
1044 × 128
1044 × 256
532 × 64
532 × 128
532 × 256
1044 × 64
1044 × 128
1044 × 256
l
Fluorescence spectrometer, ICP
l
Industrial inspection requiring
l
Semiconductor inspection
l
DNA sequencer
l
Low-light-level detection
Number of active
pixels
512 × 58
512 × 122
512 × 250
1024 × 58
1024 × 122
1024 × 250
512 × 58
512 × 122
512 × 250
1024 × 58
1024 × 122
1024 × 250
Active area
[mm (H) × mm (V)]
12.288 × 1.392
12.288 × 2.928
12.288 × 6.000
24.576 × 1.392
24.576 × 2.928
24.576 × 6.000
12.288 × 1.392
12.288 × 2.928
12.288 × 6.000
24.576 × 1.392
24.576 × 2.928
24.576 × 6.000
Suitable
multichannel
detector head
Non-cooled
C7040
One-stage
TE-cooled
C7041
s
General ratings
Parameter
S7030 series
S7031 series
Pixel size
24 (H) × 24 (V) µm
Vertical clock phase
2 phases
Horizontal clock phase
2 phases
Output circuit
One-stage MOSFET source follower
Package
24 pin ceramic DIP (refer to dimensional outlines)
1
Window *
Quartz glass
AR-coated sapphire
*1: Temporary window type (ex. S7030-0906N) is available upon request.
(Temporary window is fixed by tape to protect the CCD chip and wire bonding.)
1
CCD area image sensor
s
Absolute maximum ratings (Ta=25 °C)
Parameter
Operating temperature *
2
Storage temperature
OD voltage
RD voltage
ISV voltage
ISH voltage
IGV voltage
IGH voltage
SG voltage
OG voltage
RG voltage
TG voltage
Vertical clock voltage
Horizontal clock voltage
*2: Chip temperature
Symbol
Topr
Tstg
V
OD
V
RD
V
ISV
V
ISH
V
IG1V
, V
IG2V
V
IG1H
, V
IG2H
V
SG
V
OG
V
RG
V
TG
V
P1V
, V
P2V
V
P1H
, V
P2H
Min.
-50
-50
-0.5
-0.5
-0.5
-0.5
-10
-10
-10
-10
-10
-10
-10
-10
S7030/S7031 series
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
+30
+70
+25
+18
+18
+18
+15
+15
+15
+15
+15
+15
+15
+15
Unit
°C
°C
V
V
V
V
V
V
V
V
V
V
V
V
s
Operating conditions (MPP mode, Ta=25 °C)
Parameter
Output transistor drain voltage
Reset drain voltage
Output gate voltage
Substrate voltage
Test point (vertical input source)
Test point (horizontal input source)
Test point (vertical input gate)
Test point (horizontal input gate)
Vertical shift register
clock voltage
Horizontal shift register
clock voltage
Summing gate voltage
Reset gate voltage
Transfer gate voltage
Symbol
V
OD
V
RD
V
OG
V
SS
V
ISV
V
ISH
V
IG1V
, V
IG2V
V
IG1H
, V
IG2H
V
P1VH
, V
P2VH
V
P1VL
, V
P2VL
V
P1HH
, V
P2HH
V
P1HL
, V
P2HL
V
SGH
V
SGL
V
RGH
V
RGL
V
TGH
V
TGL
Min.
18
11.5
1
-
-
-
-9
-9
4
-9
4
-9
4
-9
4
-9
4
-9
Typ.
20
12
3
0
V
RD
V
RD
-8
-8
6
-8
6
-8
6
-8
6
-8
6
-8
Max.
22
12.5
5
-
-
-
-
-
8
-7
8
-7
8
-7
8
-7
8
-7
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
High
Low
High
Low
High
Low
High
Low
High
Low
s
Electrical characteristics (Ta=25 °C)
Parameter
Symbol
Min.
Typ.
Signal output frequency
fc
-
0.25
S703
*
-0906
-
750
S703
*
-0907/-1006
1500
Vertical shift register
C
P1V
, C
P2V
capacitance
S703
*
-0908/-1007
3000
S703
*
-1008
6000
S703
*
-0906/-0907/-0908
110
Horizontal shift register
-
C
P1H
, C
P2H
capacitance
180
S703
*
-1006/-1007/-1008
Summing gate capacitance
C
SG
-
30
Reset gate capacitance
C
RG
-
30
S703
*
-0906/-0907/-0908
55
Transfer gate capacitance
C
TG
-
S703
*
-1006/-1007/-1008
75
3
Charge transfer efficiency *
CTE
0.99995
0.99999
4
DC output level *
Vout
14
16
4
Output impedance *
Zo
-
3
4
*
5
Power consumption *
P
-
13
*3: Charge transfer efficiency per pixel, measured at half of the full well capacity.
*4: The values depend on the load resistance. (Typical, V
OD
=20 V, Load resistance=22 kΩ)
*5: Power consumption of the on-chip amplifier.
Max.
1
-
-
-
-
-
-
-
-
-
18
4
14
Unit
MHz
pF
pF
pF
pF
pF
-
V
kΩ
mW
2
CCD area image sensor
s
E le c tr ic a l a n d o p tic a l c h a r a c te r is tic s ( Ta = 2 5 ° C , u n le s s o th e r w is e n o te d )
S7030/S7031 series
P a r a m e te r
S ym bol
M in .
Typ.
M a x.
U n it
S a tu r a tio n o u tp u t v o lta g e
Vsat
-
Fw × Sv
-
V
V e r tic a l
240
320
-
-
F u ll w e ll c a p a c ity
Fw
ke
H o r iz o n ta l *
6
800
1000
-
-
C C D n o d e s e n s itiv ity
Sv
1 .8
2 .2
-
µ V /e
D a rk c u rre n t *
7
2 5 °C
-
100
1000
-
DS
e /p ix e l/s
M PP m ode
0 °C
-
10
100
( te n ta tiv e d a ta )
-
R e a d o u t n o is e *
8
Nr
-
8
16
e rm s
L in e b in n in g
100000
125000
-
-
D y n a m ic ra n g e *
9
DR
A r e a s c a n n in g
30000
40000
-
-
P h o to r e s p o n s e n o n - u n ifo r m ity *
1 0
PRNU
-
±3
±1 0
%
λ
S p e c tr a l r e s p o n s e r a n g e
-
2 0 0 to 1 1 0 0
-
nm
W h ite s p o ts
-
-
0
-
P o in t d e fe c t *
1 1
B la c k s p o ts
-
-
10
-
-
B le m is h
C lu s te r d e fe c t *
1 2
-
-
3
-
-
-
0
-
C o lu m n d e fe c t *
1 3
* 6 : T h e lin e a r ity is ± 1 .5 % .
* 7 : D a r k c u r r e n t n e a r ly d o u b le s fo r e v e r y 5 to 7 ° C in c r e a s e in te m p e r a tu r e .
* 8 : M e a s u re d w ith a H A M A M AT S U C 4 8 8 0 d ig ita l C C D c a m e ra w ith a C D S c irc u it (s e n s o r te m p e ra tu re : -4 0 ° C , o p e ra tin g fre q u e n c y :
1 5 0 k H z ).
* 9 : D y n a m ic r a n g e ( D R ) = F u ll w e ll/R e a d o u t n o is e
* 1 0 : M e a s u r e d a t o n e - h a lf o f th e s a tu r a tio n o u tp u t ( fu ll w e ll c a p a c ity ) u s in g a w h ite flu o r e s c e n t la m p .
Photo response non-uniformity (PRNU) [%]
Fixed pattern noise (peak to peak)
Signal
× 100
* 11 : W h ite s p o ts
P ix e ls w h o s e d a r k c u rr e n t is h ig h e r th a n 1 k e - a fte r o n e - s e c o n d in te g r a tio n a t 0 ° C .
B la c k s p o ts
P ix e ls w h o s e s e n s itiv ity is lo w e r th a n o n e - h a lf o f th e a v e r a g e p ix e l o u tp u t. ( M e a s u r e d w ith u n ifo r m lig h t p r o d u c in g o n e - h a lf
o f th e s a tu r a tio n c h a r g e )
* 1 2 : 2 to 9 c o n tig u o u s d e fe c tiv e p ix e ls
* 1 3 : 1 0 o r m o r e c o n tig u o u s d e fe c tiv e p ix e ls
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