®
LY62L102516
Rev. 0.2
1024K X 16 BIT LOW POWER CMOS SRAM
REVISION HISTORY
Revision
Rev. 0.1
Rev. 0.2
Description
Initial Issue
Added SL Spec.
Issue Date
Feb.20.2008
Jul.2.2008
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
®
LY62L102516
Rev. 0.2
1024K X 16 BIT LOW POWER CMOS SRAM
FEATURES
GENERAL DESCRIPTION
Fast access time : 55/70ns
Low power consumption:
Operating current : 45/30mA (TYP.)
Standby current : 10μA (TYP.) LL-version
5μA (TYP.) SL-version
Single 2.7V ~ 3.6V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
Data retention voltage : 1.2V (MIN.)
Lead free and green package available
Package : 48-pin 12mm x 20mm TSOP-I
48-ball 6mm x 8mm TFBGA
The LY62L102516 is a 16,777,216-bit low power
CMOS static random access memory organized as
1,048,576 words by 16 bits. It is fabricated using
very high performance, high reliability CMOS
technology. Its standby current is stable within the
range of operating temperature.
The LY62L102516 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The LY62L102516 operates from a single power
supply of 2.7V ~ 3.6V and all inputs and outputs are
fully TTL compatible
PRODUCT FAMILY
Product
Family
LY62L102516
LY62L102516(E)
LY62L102516(I)
Operating
Temperature
0 ~ 70℃
-20 ~ 80℃
-40 ~ 85℃
Vcc Range
2.7 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
Speed
55/70ns
55/70ns
55/70ns
Power Dissipation
Standby(I
SB1,
TYP.) Operating(Icc,TYP.)
10µA(LL)/5µA(SL)
45/30mA
10µA(LL)/5µA(SL)
45/30mA
10µA(LL)/5µA(SL)
45/30mA
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Address Inputs
Chip Enable Input
Write Enable Input
Output Enable Input
Lower Byte Control
Upper Byte Control
Power Supply
Ground
Vcc
Vss
A0 - A19
CE#, CE2
WE#
OE#
LB#
UB#
V
CC
DQ0 – DQ15 Data Inputs/Outputs
DECODER
1024Kx16
MEMORY ARRAY
A0-A19
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
V
SS
I/O DATA
CIRCUIT
COLUMN I/O
CE#
CE2
WE#
OE#
LB#
UB#
CONTROL
CIRCUIT
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
®
LY62L102516
Rev. 0.2
1024K X 16 BIT LOW POWER CMOS SRAM
PIN CONFIGURATION
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE#
CE2
NC
UB#
LB#
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
NC
Vss
DQ15
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
Vcc
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
Vss
CE#
A0
LY62L102516
TSOP-I
A
B
C
D
E
F
G
H
LB# OE#
DQ8 UB#
A0
A3
A1
A4
A6
A7
A2
CE2
CE# DQ0
DQ1 DQ2
DQ3 Vcc
DQ9 DQ10 A5
Vss DQ11 A17
Vcc DQ12 NC
DQ14 DQ13 A14
DQ15 A19
A18
A8
A12
A9
A16 DQ4 Vss
A15 DQ5 DQ6
A13 WE# DQ7
A10
A11
NC
1
2
3
4
TFBGA
5
6
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on V
CC
relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
Soldering Temperature (under 10 sec)
SYMBOL
V
T1
V
T2
T
A
T
STG
P
D
I
OUT
T
SOLDER
RATING
-0.5 to 4.6
-0.5 to V
CC
+0.5
0 to 70(C grade)
-20 to 80(E grade)
-40 to 85(I grade)
-65 to 150
1
50
260
UNIT
V
V
℃
℃
W
mA
℃
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
2
®
LY62L102516
Rev. 0.2
1024K X 16 BIT LOW POWER CMOS SRAM
TRUTH TABLE
MODE
Standby
Output Disable
Read
CE#
H
X
X
L
L
L
L
L
L
L
L
CE2
X
L
X
H
H
H
H
H
H
H
H
OE#
X
X
X
H
H
L
L
L
X
X
X
WE#
X
X
X
H
H
H
H
H
L
L
L
LB#
X
X
H
L
X
L
H
L
L
H
L
UB#
X
X
H
X
L
H
L
L
H
L
L
I/O OPERATION
SUPPLY CURRENT
DQ0-DQ7 DQ8-DQ15
High – Z
High – Z
I
SB
,I
SB1
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
I
CC
,I
CC1
High – Z
High – Z
D
OUT
High – Z
I
CC
,I
CC1
High – Z
D
OUT
D
OUT
D
OUT
D
IN
High – Z
I
CC
,I
CC1
High – Z
D
IN
D
IN
D
IN
Write
Note:
H = V
IH
, L = V
IL
, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
PARAMETER
Supply Voltage
V
CC
*1
Input High Voltage
V
IH
*2
Input Low Voltage
V
IL
Input Leakage Current
I
LI
V
CC
≧
V
IN
≧
V
SS
Output Leakage
V
CC
≧
V
OUT
≧
V
SS
I
LO
Current
Output Disabled
Output High Voltage
V
OH
I
OH
= -1mA
Output Low Voltage
V
OL
I
OL
= 2mA
Cycle time = Min.
- 55
CE# = V
IL
and CE2 = V
IH
I
CC
I
I/O
= 0mA
- 70
Other pins at V
IL
or V
IH
Average Operating
Power supply Current
Cycle time = 1µs
CE#
≦
0.2V and CE2
≧
V
CC
-0.2V
I
CC1
I
I/O
= 0mA
Other pins at 0.2V or V
CC
-0.2V
CE# = V
IH
or CE2 = V
IL
I
SB
Other pins at V
IL
or V
IH
-LL
-LLE
Standby Power
CE#
≧
V
CC
-0.2V
Supply Current
-LLI
I
SB1
or CE2
≦
0.2V
-SL
Other pins at 0.2V or V
CC
-0.2V
-SLE
-SLI
Notes:
1. V
IH
(max) = V
CC
+ 3.0V for pulse width less than 10ns.
2. V
IL
(min) = V
SS
- 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical values are measured at V
CC
= V
CC
(TYP.) and T
A
= 25℃
MIN.
2.7
2.2
- 0.2
-1
-1
2.2
-
-
-
TYP.
3.0
-
-
-
-
2.7
-
45
30
*4
MAX.
3.6
V
CC
+0.3
0.6
1
1
-
0.4
60
45
UNIT
V
V
V
µA
µA
V
V
mA
mA
-
8
16
mA
-
-
-
-
-
-
-
0.3
10
10
10
5
5
5
2
60
80
100
30
30
40
mA
µA
µA
µA
µA
µA
µA
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
®
LY62L102516
Rev. 0.2
1024K X 16 BIT LOW POWER CMOS SRAM
CAPACITANCE
(T
A
= 25
℃
, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN.
-
-
MAX
6
8
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to V
CC
- 0.2V
3ns
1.5V
C
L
= 30pF + 1TTL, I
OH
/I
OL
= -1mA/2mA
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
LB#, UB# Access Time
LB#, UB# to High-Z Output
LB#, UB# to Low-Z Output
(2) WRITE CYCLE
PARAMETER
Write Cycle Time
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High-Z
LB#, UB# Valid to End of Write
SYM.
t
RC
t
AA
t
ACE
t
OE
t
CLZ
*
t
OLZ
*
t
CHZ
*
t
OHZ
*
t
OH
t
BA
t
BHZ
*
t
BLZ
*
LY62L102516-55
MIN.
MAX.
55
-
-
55
-
55
-
30
10
-
5
-
-
20
-
20
10
-
-
55
-
25
10
-
LY62L102516-70
MIN.
MAX.
70
-
-
70
-
70
-
35
10
-
5
-
-
25
-
25
10
-
-
70
-
30
10
-
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
SYM.
t
WC
t
AW
t
CW
t
AS
t
WP
t
WR
t
DW
t
DH
t
OW
*
t
WHZ
*
t
BW
LY62L102516-55
MIN.
MAX.
55
-
50
-
50
-
0
-
45
-
0
-
25
-
0
-
5
-
-
20
45
-
LY62L102516-70
MIN.
MAX.
70
-
60
-
60
-
0
-
55
-
0
-
30
-
0
-
5
-
-
25
60
-
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
*These parameters are guaranteed by device characterization, but not production tested.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
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