TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
P-CHANNEL J-FET
Equivalent To MIL-PRF-19500/476
DEVICES
LEVELS
2N5114
2N5115
2N5116
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Gate-Source Voltage
(1)
Drain-Source Voltage
(1)
Drain-Gate Voltage
Gate Current
Power Dissipation
T
A
= +25°C
(2)
Symbol
V
GS
V
DS
V
DG
I
G
P
T
T
stg
All Devices
30
30
30
50
0.500
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
W
°C
MQ = JAN Equivalent
MX = JANTX Equivalent
MV = JANTXV Equivalent
Storage Temperature Range
(1) Symmetrical geometry allows operation of those units with source / drain leads interchanged.
(2) Derate linearly 3.0 mW/°C for T
A
> 25°C.
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
Gate-Source Breakdown Voltage
V
DS
= 0, I
G
= 1.0
μA
dc
Drain-Source “On” State Voltage
V
GS
= 0V dc, I
D
= -15mA dc
V
GS
= 0V dc, I
D
= -7.0mA dc
V
GS
= 0V dc, I
D
= -3.0mA dc
Gate Reverse Current
V
DS
= 0, V
GS
= 20V dc
Drain Current Cutoff
V
GS
= 12V dc, V
DS
= -15V dc
V
GS
= 7.0V dc, V
DS
= -15V dc
V
GS
= 5.0V dc, V
DS
= -15V dc
Zero Gate Voltage Drain Current
V
GS
= 0, V
DS
= -18V dc
V
GS
= 0, V
DS
= -15V dc
V
GS
= 0, V
DS
= -15V dc
Gate-Source Cutoff
V
DS
= -15, I
D
= -1.0nA dc
V
DS
= -15, I
D
= -1.0nA dc
V
DS
= -15, I
D
= -1.0nA dc
Symbol
V
(BR)GSS
Min.
30
Max.
Unit
Vdc
TO-18
(TO-206AA)
2N5114
2N5115
2N5116
V
DS(on)
-1.3
-0.8
-0.6
Vdc
I
GSS
500
pAdc
2N5114
2N5115
2N5116
I
D(off)
-500
-500
-500
pAdc
2N5114
2N5115
2N5116
I
DSS
-30
-15
-5.0
-90
-60
-25
mAdc
2N5114
2N5115
2N5116
V
GS(off)
5.0
3.0
1.0
10
6.0
4.0
Vdc
T4-LDS-0006 Rev. 1 (063387)
Page 1 of 2
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
P-CHANNEL J-FET
Equivalent To MIL-PRF-19500/476
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Small-Signal Drain-Source “On” State Resistance
V
GS
= 0, I
D
= -1.0mA dc
2N5114
2N5115
2N5116
Small-Signal Drain-Source “On” State Resistance
V
GS
= 0, I
D
= 0; f = 1kHz
2N5114
2N5115
2N5116
Small-Signal, Common-Source Short-Circuit Reverse Transfer Capacitance
2N5114
V
GS
= 12V dc, V
DS
= 0
2N5115
V
GS
= 7.0V dc, V
DS
= 0
2N5116
V
GS
= 5.0V dc, V
DS
= 0
Small-Signal, Common-Source Short-Circuit Input Capacitance
V
GS
= 0, V
DS
= -15V dc, f = 1.0MHz
2N5114, 2N5115
2N5116
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Delay Time
Symbol
2N5114
2N5115
2N5116
2N5114
2N5115
2N5116
2N5114
2N5115
2N5116
See Figure 2 of
MIL-PRF-19500/476
t
don
Min.
Max.
6
10
25
10
20
35
6
8
20
Unit
ηs
Symbol
Min.
Max.
75
100
175
Unit
r
ds(on)1
Ω
r
ds(on)2
75
100
175
Ω
C
rss
7.0
pF
C
iss
25
27
pF
Rise Time
t
r
ηs
Turn-Off Delay Time
t
doff
ηs
T4-LDS-0006 Rev. 1 (063387)
Page 2 of 2
Microcontroller MCU
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