2N697 datasheet, PDF - EEWORLD Datasheet

2N697: DescriptionTRANSISTOR,BJT,NPN,40V V(BR)CEO,500MA I(C),TO-205AD; CategoryDiscrete semiconductor The transistor; File Size51KB，1 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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TRANSISTOR,BJT,NPN,40V V(BR)CEO,500MA I(C),TO-205AD

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	NXP
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknow
Maximum collector current (IC)	0.5 A
Collector-based maximum capacity	35 pF
Configuration	Single
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	100 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power consumption environment	2 W
Maximum power dissipation(Abs)	0.6 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
VCEsat-Max	1.5 V

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