1A6 datasheet, PDF - EEWORLD Datasheet

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1A6: Description1 A, 800 V, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size63KB，2 Pages; ManufacturerUniohm Corp.; Websitehttp://www.uniohm.com.tw/

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1A6 Overview

1 A, 800 V, SILICON, SIGNAL DIODE

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1F1

1.0 AMP FAST RECOVERY RECTIFIERS

THRU

1F7

VOLTAGE RANGE

50 to 1000 Volts

CURRENT

FEATURES

* Low forward voltage drop

* High current capability

* High reliability

* High surge current capability

1.0 Ampere

R-1

.102(2.6)

.091(2.3)

DIA.

.787(20.0)

MIN.

MECHANICAL DATA

* Case: Molded plastic

* Epoxy: UL 94V-0 rate flame retardant

* Lead: Axial leads, solderable per MIL-STD-202,

method 208 guranteed

* Polarity: Color band denotes cathode end

* Mounting position: Any

* Weight: 0.19 grams

.126(3.2)

.106(2.7)

.025(0.65)

.021(0.55)

DIA.

.787(20.0)

MIN.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating 25 C ambient temperature uniess otherwies specified.

Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

TYPE NUMBER

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

.375"(9.5mm) Lead Length at Ta=25 C

Peak Forward Surge Current, 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Maximum Instantaneous Forward Voltage at 1.0A

Maximum DC Reverse Current

Ta=25 C

at Rated DC Blocking Voltage

Ta=100 C

Maximum Reverse Recovery Time (Note 1)

Typical Junction Capacitance (Note 2)

Operating and Storage Temperature Range T

, T

STG

NOTES:

1F1

1F2

100

1F3

200

140

200

1F4

400

280

400

1.0

1.3

5.0

100

1F5

600

420

600

1F6

800

560

800

1F7

1000

700

1000

UNITS

150

-65 +150

250

500

1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A

2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

1A6 Related Products

	1A6	1A5	1A7	1F5	1F6	1F7
Description	1 A, 800 V, SILICON, SIGNAL DIODE	1 A, 600 V, SILICON, SIGNAL DIODE	SIGNAL DIODE	1 A, 600 V, SILICON, SIGNAL DIODE	1 A, 800 V, SILICON, SIGNAL DIODE	1 A, 1000 V, SILICON, SIGNAL DIODE
Is it lead-free?	-	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	-	conform to	conform to	conform to	conform to	conform to
Maker	-	Uniohm Corp.	Uniohm Corp.	Uniohm Corp.	Uniohm Corp.	Uniohm Corp.
package instruction	-	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Contacts	-	2	2	2	2	2
Reach Compliance Code	-	unknow	unknow	unknown	unknow	unknow
ECCN code	-	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	-	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
Shell connection	-	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	-	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	-	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	-	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Number of components	-	1	1	1	1	1
Number of terminals	-	2	2	2	2	2
Maximum operating temperature	-	175 °C	175 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	-	1 A	1 A	1 A	1 A	1 A
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	-	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maximum repetitive peak reverse voltage	-	600 V	1000 V	600 V	800 V	1000 V
surface mount	-	NO	NO	NO	NO	NO
Terminal form	-	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	-	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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