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2SA1020-C

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size424KB,3 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Parametric Compare View All

2SA1020-C Overview

Small Signal Bipolar Transistor

2SA1020-C Parametric

Parameter NameAttribute value
MakerSECOS
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codecompli
Maximum collector current (IC)2 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
2SA1020
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
-2A, -50V
PNP Plastic Encapsulated Transistor
FEATURES
Power amplifier applications
N
G
TO-92MOD
H
CLASSIFICATION OF h
FE(1)
Product-Rank
Range
2SA1020-O
70-140
2SA1020-Y
120-240
Emitter
Collector
Base
M
L
A
J
D
B
K
E
Collector
F
C


Base
REF.
A
B
C
D
E
F
G

Emitter
Millimeter
Min.
Max.
5.50
6.50
8.00
9.00
12.70
14.50
4.50
5.30
0.35
0.65
0.30
0.51
1.50 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min.
Max.
1.70
2.05
2.70
3.20
0.85
1.15
1.60 Max
0.00
0.40
4.00 Min
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
-50
-50
-5
-2
900
150, -55~150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Turn-on Time
Storage Time
Fall Time
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
T
on
T
s
T
f
Min.
-50
-50
-5
-
-
70
40
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
100
40
0.1
1
0.1
Max.
-
-
-
-1
-1
240
-
-0.5
-1.2
-
-
-
-
-
Unit
V
V
V
μA
μA
Test Conditions
I
C
= -100μA, I
E
= 0A
I
C
= -10mA, I
B
= 0A
I
E
= -100μA, I
C
= 0A
V
CB
= -50 V, I
E
= 0 A
V
EB
= -5 V, I
C
= 0 A
V
CE
= -2V, I
C
= -0.5A
V
CE
= -2V, I
C
= -1.5A
V
V
MHz
pF
μs
I
C
= -1A, I
B
= -50mA
I
C
= -1A, I
B
= -50mA
V
CE
= -2V, I
C
= -500mA
V
CB
= -10V, I
E
= 0 A, f=1MHz
V
CC
= -30V
I
B1
= -I
B2
= -0.05A
I
C
= -1A
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
31-Dec-2010 Rev. B
Page 1 of 3

2SA1020-C Related Products

2SA1020-C 2SA1020-O 2SA1020-O-C 2SA1020-Y 2SA1020-Y-C
Description Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code compli compli compli compli compli
Maximum collector current (IC) 2 A 2 A 2 A 2 A 2 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 70 70 120 120
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type PNP PNP PNP PNP PNP
surface mount NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
Base Number Matches - 1 1 1 1
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