PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
Over-Voltage Circuit Protection Products
PRODUCT: ZEN056V230A16CE
DOCUMENT: SCD28237
REV LETTER: A
REV DATE: JUNE 06, 2012
PAGE NO.: 1 OF 8
Specification Status: RELEASED
GENERAL DESCRIPTION
TE Circuit Protection
PolyZen devices are
polymer enhanced,
precision Zener diode
micro-assemblies.
They offer resettable
protection against
multi-Watt fault
events without the
need for multi-Watt
heat sinks.
The Zener diode
used for voltage clamping in a PolyZen micro-assembly was
selected due to its relatively flat voltage vs current response.
This helps improve output voltage clamping, even when input
voltage is high and diode currents are large.
An advanced feature of the PolyZen micro-assembly is that the
Zener diode is thermally coupled to a resistively non-linear,
polymer PTC (positive temperature coefficient) layer. This PTC
layer is fully integrated into the device, and is electrically in
series between V
IN
and the diode clamped V
OUT
.
This advanced PTC layer responds to either extended diode
heating or overcurrent events by transitioning from a low to high
resistance state, also known as ”tripping”. A tripped PTC will
limit current and generate voltage drop. It helps to protect both
the Zener diode and the follow-on electronics and effectively
increases the diode’s power handling capability.
The polymer enhanced Zener diode helps protect sensitive
portable electronics from damage caused by inductive voltage
spikes, voltage transients, incorrect power supplies and reverse
bias. These devices are particularly suitable for portable
electronics and other low-power DC devices.
BENEFITS
Stable Zener diode helps shield downstream
electronics from overvoltage and reverse bias
Trip events shut out overvoltage and reverse bias
sources
Analog nature of trip events minimizes upstream
inductive spikes
Minimal power dissipation requirements
Single component placement
FEATURES
Overvoltage transient suppression
Stable V
Z
vs fault current
Time delayed, overvoltage trip
Time delayed, reverse bias trip
Multi-Watt power handling capability
Integrated device construction
RoHS Compliant
TARGET APPLICATIONS
DC power port protection in portable electronics
DC power port protection for systems using
barrel jacks for power input
Internal overvoltage & transient suppression
DC output voltage regulation
Tablet PCs and portable electronics
TYPICAL APPLICATION BLOCK DIAGRAM
Power Supply
(External or Internal)
PolyZen Protected Electronics
2
V
IN
1
GND
+
PolyZen
Device
V
OUT
3
Regulated
Output
R
Load
Protected downstream
electronics
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
Over-Voltage Circuit Protection Products
PRODUCT: ZEN056V230A16CE
DOCUMENT: SCD28237
REV LETTER: A
REV DATE: JUNE 06, 2012
PAGE NO.: 2 OF 8
CONFIGURATION INFORMATION
Pin Configuration (Top View)
2
GND
1
1
V
IN
Block Diagram
Polymer PTC
V
IN
Zener
Diode
V
OUT
3
V
OUT
2
GND
PIN DESCRIPTION
Pin Number
1
2
3
Pin Name
V
IN
GND
V
OUT
Pin Function
V
IN
.
Protected input to Zener diode
GND
V
OUT
.
Zener regulated voltage output
MECHANICAL DIMMENSIONS
Min
Length
Width
Height
Dimension
L
W
H
（A）
B(2X)
C
T(2X)
Typ
(mm)
Max
4.8
3.8
0.8
0.7
0.9
3.9
0.1
5.0
4.0
1.0
0.8
1.0
4.05
0.2
5.2
4.2
1.2
0.9
1.1
4.2
0.3
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
Over-Voltage Circuit Protection Products
PRODUCT: ZEN056V230A16CE
DOCUMENT: SCD28237
REV LETTER: A
REV DATE: JUNE 06, 2012
PAGE NO.: 3 OF 8
DEFINITION of TERMS
I
PTC
, I
HOLD
I
PTC
I
FLT
I
OUT
Trip Event
Current flowing through the PTC portion of the
circuit
RMS fault current flowing through the diode
Current flowing out the V
OUT
pin of the device
A condition where the PTC transitions to a high
resistance state, thereby significantly limiting I
PTC
and related currents.
Time the PTC portion of the device remains in a
high resistance state.
I
OUT
V
IN
V
OUT
I
FLT
Trip
Endurance
GND
GENERAL SPECIFICATIONS
Operating Temperature
Storage Temperature
-40º to +85ºC
-40º to +85ºC
TYPICAL ELECTRICAL CHARACTERISTICS
1-3, 11
(Typical unless otherwise specified)
V
Z4
(V)
I
zt4
(A)
Min
Typ
Max
Leakage Current
I
HOLD5
(A)
@ 20
o
C
Test
Max
Voltage Current
(V)
(m A)
R1
Max7
R
Typ6
(Ohm s) (Ohm s)
V
Int
Max
8
I
FLT
Max
9
Tripped Pow er
Dissipation
10
Test
Test
Test
V
INT
Max
I
FLT
Max
Pow er
Current
Voltage
Voltage
(V)
(A)
(W)
(A)
(V)
(V)
5.45
5.60
5.75
0.1
2.3
5.25
10.0
0.032
0.060
16
5
+5
-40
+16
-12
1
16
Electrical characteristics determined at 25ºC unless otherwise specified.
This device is intended for limited fault protection. Repeated trip events or extended trip endurance can degrade the device and
may affect performance to specifications. Performance impact will depend on multiple factors including, but not limited to,
voltage, trip current, trip duration, trip cycles, and circuit design. For details or ratings specific to your application contact TE
Connectivity Circuit Protection Division directly.
Note 3: Specifications developed using 1.0 ounce 0.045” wide copper traces on dedicated FR4 test boards. Performance in your
application may vary.
Note 4: I
zt
is the current at which V
z
is measured (V
Z
= V
OUT
). Additional V
Z
values are available on request.
Note 5: I
HOLD
: Maximum steady state I
PTC
(current entering or exiting the V
IN
pin of the device) that will not generate a trip event at the
specified temperature. Specification assumes I
FLT
(current flowing through the Zener diode) is sufficiently low so as to prevent
the diode from acting as a heat source. Testing is conducted with an “open” Zener.
Note 6: R Typ: Resistance between V
IN
and V
OUT
pins during normal operation at room temperature.
Note 7: R
1Max
: The maximum resistance between V
IN
and V
OUT
pins at room temperature, one hour after first tripped event or after
reflow soldering.
Note 8: V
INT
Max: V
INT
Max is defined as the voltage at which typical qualification devices (98% devices, 95% confidence) survived at
least 100 trip cycles and 24 hours trip endurance at the specified voltage and current (I
PTC
). V
INT
Max testing is conducted using
a "shorted" load (V
OUT
= 0 V). V
INT
Max is a survivability rating, not a performance rating. For performance ratings, see Note 2.
Note 9: I
FLT
Max: Maximum RMS fault current the diode portion of the device can withstand and remain resettable. Specification is
dependent on the direction of current flow through the diode. RMS fault currents above I
FLT
Max may permanently damage the
PolyZen device. Specification assumes I
OUT
= 0. Testing conducted with no load connected to V
OUT.
Note 10: The power dissipated by the device when in the “tripped” state, as measured on TE test boards (see note 3).
Note 11: Specifications based on limited qualification data and subject to change.
Note 1:
Note 2:
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
Over-Voltage Circuit Protection Products
PRODUCT: ZEN056V230A16CE
DOCUMENT: SCD28237
REV LETTER: A
REV DATE: JUNE 06, 2012
PAGE NO.: 4 OF 8
TYPICAL DEVICE CHARACTERISTICS
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
Over-Voltage Circuit Protection Products
PRODUCT: ZEN056V230A16CE
DOCUMENT: SCD28237
REV LETTER: A
REV DATE: JUNE 06, 2012
PAGE NO.: 5 OF 8
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