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2SB1667(TE24L)

Description
Power Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size191KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SB1667(TE24L) Overview

Power Bipolar Transistor

2SB1667(TE24L) Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instruction,
Reach Compliance Codeunknow
2SB1667(SM)
TOSHIBA Transistor
Silicon PNP Triple Diffused Type
2SB1667(SM)
Audio Frequency Power Amplifier Applications
Unit: mm
Low saturation voltage: V
CE (sat)
=
−1.7
V (max)
(I
C
=
−3
A, I
B
=
−0.3
A)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Ta = 25°C
Tc = 25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−60
−60
−7
−3
−0.5
1.5
25
150
−55
to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
Note1: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-10S2A
temperature/current/voltage and the significant change in
Weight: 1.4 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2009-12-21

2SB1667(TE24L) Related Products

2SB1667(TE24L) 2SB1667(SM)-GR 2SB1667(SM)-O 2SB1667(SM)-Y
Description Power Bipolar Transistor TRANSISTOR 3 A, 60 V, PNP, Si, POWER TRANSISTOR, LEAD FREE, 2-10S2, 3 PIN, BIP General Purpose Power TRANSISTOR 3 A, 60 V, PNP, Si, POWER TRANSISTOR, LEAD FREE, 2-10S2, 3 PIN, BIP General Purpose Power TRANSISTOR 3 A, 60 V, PNP, Si, POWER TRANSISTOR, LEAD FREE, 2-10S2, 3 PIN, BIP General Purpose Power
package instruction , LEAD FREE, 2-10S2, 3 PIN LEAD FREE, 2-10S2, 3 PIN LEAD FREE, 2-10S2, 3 PIN
Reach Compliance Code unknow unknow unknow unknow
Is it lead-free? - Lead free Contains lead Contains lead
Contacts - 3 3 3
ECCN code - EAR99 EAR99 EAR99
Shell connection - COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) - 3 A 3 A 3 A
Collector-emitter maximum voltage - 60 V 60 V 60 V
Configuration - SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) - 150 60 100
JESD-30 code - R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
Number of components - 1 1 1
Number of terminals - 2 2 2
Maximum operating temperature - 150 °C 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type - PNP PNP PNP
Certification status - Not Qualified Not Qualified Not Qualified
surface mount - YES YES YES
Terminal form - GULL WING GULL WING GULL WING
Terminal location - SINGLE SINGLE SINGLE
transistor applications - AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials - SILICON SILICON SILICON
Nominal transition frequency (fT) - 9 MHz 9 MHz 9 MHz
Base Number Matches - 1 1 1
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