TRANSISTOR 25 A, 150 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
| Parameter Name | Attribute value |
| Maker | Toshiba Semiconductor |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 150 V |
| Maximum drain current (ID) | 25 A |
| Maximum drain-source on-resistance | 0.12 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 900 pF |
| JESD-30 code | R-PSFM-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 150 W |
| Maximum pulsed drain current (IDM) | 100 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 180 ns |
| Maximum opening time (tons) | 110 ns |
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