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79R2020A12GB

Description
Memory Circuit, CMOS, CPGA68
Categorystorage    storage   
File Size266KB,6 Pages
ManufacturerIDT (Integrated Device Technology)
Download Datasheet Parametric Compare View All

79R2020A12GB Overview

Memory Circuit, CMOS, CPGA68

79R2020A12GB Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIDT (Integrated Device Technology)
package instructionPGA, PGA68,11X11
Reach Compliance Code_compli
JESD-30 codeS-XPGA-P68
JESD-609 codee0
Memory IC TypeMEMORY CIRCUIT
Number of terminals68
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialCERAMIC
encapsulated codePGA
Encapsulate equivalent codePGA68,11X11
Package shapeSQUARE
Package formGRID ARRAY
Peak Reflow Temperature (Celsius)225
power supply5 V
Certification statusNot Qualified
Filter level38535Q/M;38534H;883B
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal pitch2.54 mm
Terminal locationPERPENDICULAR
Maximum time at peak reflow temperature30

79R2020A12GB Related Products

79R2020A12GB 79R2020A12G 79R2020A12J 79R2020A16G 79R2020A16GB 79R2020A16J
Description Memory Circuit, CMOS, CPGA68 Memory Circuit, CMOS, CPGA68 Memory Circuit, CMOS, PQCC68 Memory Circuit, CMOS, CPGA68 Memory Circuit, CMOS, CPGA68 Memory Circuit, CMOS, PQCC68
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible
Maker IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
Reach Compliance Code _compli _compli _compli _compli _compli _compli
JESD-30 code S-XPGA-P68 S-XPGA-P68 S-PQCC-J68 S-XPGA-P68 S-XPGA-P68 S-PQCC-J68
JESD-609 code e0 e0 e0 e0 e0 e0
Memory IC Type MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT
Number of terminals 68 68 68 68 68 68
Maximum operating temperature 125 °C 70 °C 70 °C 70 °C 125 °C 70 °C
Package body material CERAMIC CERAMIC PLASTIC/EPOXY CERAMIC CERAMIC PLASTIC/EPOXY
encapsulated code PGA PGA QCCJ PGA PGA QCCJ
Encapsulate equivalent code PGA68,11X11 PGA68,11X11 LDCC68,1.0SQ PGA68,11X11 PGA68,11X11 LDCC68,1.0SQ
Package shape SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE
Package form GRID ARRAY GRID ARRAY CHIP CARRIER GRID ARRAY GRID ARRAY CHIP CARRIER
Peak Reflow Temperature (Celsius) 225 260 225 260 225 225
power supply 5 V 5 V 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V
surface mount NO NO YES NO NO YES
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level MILITARY COMMERCIAL COMMERCIAL COMMERCIAL MILITARY COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn85Pb15) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn85Pb15)
Terminal form PIN/PEG PIN/PEG J BEND PIN/PEG PIN/PEG J BEND
Terminal pitch 2.54 mm 2.54 mm 1.27 mm 2.54 mm 2.54 mm 1.27 mm
Terminal location PERPENDICULAR PERPENDICULAR QUAD PERPENDICULAR PERPENDICULAR QUAD
Maximum time at peak reflow temperature 30 6 30 6 30 30
package instruction PGA, PGA68,11X11 - QCCJ, LDCC68,1.0SQ - PGA, PGA68,11X11 QCCJ, LDCC68,1.0SQ
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