Memory Circuit, CMOS, PQCC68
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | IDT (Integrated Device Technology) |
| package instruction | QCCJ, LDCC68,1.0SQ |
| Reach Compliance Code | _compli |
| JESD-30 code | S-PQCC-J68 |
| JESD-609 code | e0 |
| Memory IC Type | MEMORY CIRCUIT |
| Humidity sensitivity level | 1 |
| Number of terminals | 68 |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | QCCJ |
| Encapsulate equivalent code | LDCC68,1.0SQ |
| Package shape | SQUARE |
| Package form | CHIP CARRIER |
| Peak Reflow Temperature (Celsius) | 225 |
| power supply | 5 V |
| Certification status | Not Qualified |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn85Pb15) |
| Terminal form | J BEND |
| Terminal pitch | 1.27 mm |
| Terminal location | QUAD |
| Maximum time at peak reflow temperature | 30 |
| 79R2020A12J | 79R2020A12G | 79R2020A12GB | 79R2020A16G | 79R2020A16GB | 79R2020A16J | |
|---|---|---|---|---|---|---|
| Description | Memory Circuit, CMOS, PQCC68 | Memory Circuit, CMOS, CPGA68 | Memory Circuit, CMOS, CPGA68 | Memory Circuit, CMOS, CPGA68 | Memory Circuit, CMOS, CPGA68 | Memory Circuit, CMOS, PQCC68 |
| Is it lead-free? | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Maker | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| Reach Compliance Code | _compli | _compli | _compli | _compli | _compli | _compli |
| JESD-30 code | S-PQCC-J68 | S-XPGA-P68 | S-XPGA-P68 | S-XPGA-P68 | S-XPGA-P68 | S-PQCC-J68 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 |
| Memory IC Type | MEMORY CIRCUIT | MEMORY CIRCUIT | MEMORY CIRCUIT | MEMORY CIRCUIT | MEMORY CIRCUIT | MEMORY CIRCUIT |
| Number of terminals | 68 | 68 | 68 | 68 | 68 | 68 |
| Maximum operating temperature | 70 °C | 70 °C | 125 °C | 70 °C | 125 °C | 70 °C |
| Package body material | PLASTIC/EPOXY | CERAMIC | CERAMIC | CERAMIC | CERAMIC | PLASTIC/EPOXY |
| encapsulated code | QCCJ | PGA | PGA | PGA | PGA | QCCJ |
| Encapsulate equivalent code | LDCC68,1.0SQ | PGA68,11X11 | PGA68,11X11 | PGA68,11X11 | PGA68,11X11 | LDCC68,1.0SQ |
| Package shape | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE |
| Package form | CHIP CARRIER | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | CHIP CARRIER |
| Peak Reflow Temperature (Celsius) | 225 | 260 | 225 | 260 | 225 | 225 |
| power supply | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| surface mount | YES | NO | NO | NO | NO | YES |
| technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| Temperature level | COMMERCIAL | COMMERCIAL | MILITARY | COMMERCIAL | MILITARY | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn85Pb15) |
| Terminal form | J BEND | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | J BEND |
| Terminal pitch | 1.27 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 1.27 mm |
| Terminal location | QUAD | PERPENDICULAR | PERPENDICULAR | PERPENDICULAR | PERPENDICULAR | QUAD |
| Maximum time at peak reflow temperature | 30 | 6 | 30 | 6 | 30 | 30 |
| package instruction | QCCJ, LDCC68,1.0SQ | - | PGA, PGA68,11X11 | - | PGA, PGA68,11X11 | QCCJ, LDCC68,1.0SQ |
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