79R2020A16J datasheet, PDF - EEWORLD Datasheet

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79R2020A16J: DescriptionMemory Circuit, CMOS, PQCC68; Categorystorage storage; File Size266KB，6 Pages; ManufacturerIDT (Integrated Device Technology)

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79R2020A16J Overview

Memory Circuit, CMOS, PQCC68

79R2020A16J Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
package instruction	QCCJ, LDCC68,1.0SQ
Reach Compliance Code	_compli
JESD-30 code	S-PQCC-J68
JESD-609 code	e0
Memory IC Type	MEMORY CIRCUIT
Humidity sensitivity level	1
Number of terminals	68
Maximum operating temperature	70 °C
Minimum operating temperature
Package body material	PLASTIC/EPOXY
encapsulated code	QCCJ
Encapsulate equivalent code	LDCC68,1.0SQ
Package shape	SQUARE
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	225
power supply	5 V
Certification status	Not Qualified
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn85Pb15)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	30

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79R2020A16J Related Products

	79R2020A16J	79R2020A12G	79R2020A12GB	79R2020A12J	79R2020A16G	79R2020A16GB
Description	Memory Circuit, CMOS, PQCC68	Memory Circuit, CMOS, CPGA68	Memory Circuit, CMOS, CPGA68	Memory Circuit, CMOS, PQCC68	Memory Circuit, CMOS, CPGA68	Memory Circuit, CMOS, CPGA68
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
Reach Compliance Code	_compli	_compli	_compli	_compli	_compli	_compli
JESD-30 code	S-PQCC-J68	S-XPGA-P68	S-XPGA-P68	S-PQCC-J68	S-XPGA-P68	S-XPGA-P68
JESD-609 code	e0	e0	e0	e0	e0	e0
Memory IC Type	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT
Number of terminals	68	68	68	68	68	68
Maximum operating temperature	70 °C	70 °C	125 °C	70 °C	70 °C	125 °C
Package body material	PLASTIC/EPOXY	CERAMIC	CERAMIC	PLASTIC/EPOXY	CERAMIC	CERAMIC
encapsulated code	QCCJ	PGA	PGA	QCCJ	PGA	PGA
Encapsulate equivalent code	LDCC68,1.0SQ	PGA68,11X11	PGA68,11X11	LDCC68,1.0SQ	PGA68,11X11	PGA68,11X11
Package shape	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
Package form	CHIP CARRIER	GRID ARRAY	GRID ARRAY	CHIP CARRIER	GRID ARRAY	GRID ARRAY
Peak Reflow Temperature (Celsius)	225	260	225	225	260	225
power supply	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	YES	NO	NO	YES	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	MILITARY	COMMERCIAL	COMMERCIAL	MILITARY
Terminal surface	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	J BEND	PIN/PEG	PIN/PEG	J BEND	PIN/PEG	PIN/PEG
Terminal pitch	1.27 mm	2.54 mm	2.54 mm	1.27 mm	2.54 mm	2.54 mm
Terminal location	QUAD	PERPENDICULAR	PERPENDICULAR	QUAD	PERPENDICULAR	PERPENDICULAR
Maximum time at peak reflow temperature	30	6	30	30	6	30
package instruction	QCCJ, LDCC68,1.0SQ	-	PGA, PGA68,11X11	QCCJ, LDCC68,1.0SQ	-	PGA, PGA68,11X11

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