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BS62LV256PA-70

Description
Standard SRAM, 32KX8, 70ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28
Categorystorage    storage   
File Size235KB,10 Pages
ManufacturerBrilliance
Download Datasheet Parametric Compare View All

BS62LV256PA-70 Overview

Standard SRAM, 32KX8, 70ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28

BS62LV256PA-70 Parametric

Parameter NameAttribute value
MakerBrilliance
Parts packaging codeDIP
package instructionDIP,
Contacts28
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time70 ns
JESD-30 codeR-PDIP-T28
length37.084 mm
memory density262144 bi
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals28
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize32KX8
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)2.4 V
Nominal supply voltage (Vsup)3 V
surface mountNO
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
width15.24 mm
Very Low Power CMOS SRAM
32K X 8 bit
Green package materials are compliant to RoHS
BS62LV256
n
FEATURES
Ÿ
Wide V
CC
operation voltage : 2.4V ~ 5.5V
Ÿ
Very low power consumption :
V
CC
= 3.0V Operation current : 25mA (Max.) at 70ns
1mA (Max.) at 1MHz
Standby current : 0.01uA(Typ.) at 25
O
C
V
CC
= 5.0V Operation current : 40mA (Max.) at 70ns
2mA (Max.) at 1MHz
Standby current : 0.4uA (Typ.) at 25
O
C
Ÿ
High speed access time :
-70
70ns(Max.) at V
CC
:
3.0~5.5V
Ÿ
Automatic power down when chip is deselected
Ÿ
Easy expansion with CE and OE options
Ÿ
Three state outputs and TTL compatible
Ÿ
Fully static operation
Ÿ
Data retention supply voltage as low as 1.5V
n
DESCRIPTION
The BS62LV256 is a high performance, very low power CMOS Static
Random Access Memory organized as 32,768 by 8 bits and
operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical CMOS standby
current of 0.01uA and maximum access time of 70ns in 3.0V
operation.
Easy memory expansion is provided by an active LOW chip enable
(CE), and active LOW output enable (OE) and three-state output
drivers.
The BS62LV256 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV256 is available in DICE form, JEDEC standard 28 pin
330mil Plastic SOP, 600mil Plastic DIP, 8mmx13.4mm TSOP
(normal type).
n
POWER CONSUMPTION
POWER DISSIPATION
PRODUCT
FAMILY
BS62LV256PA
BS62LV256SA
BS62LV256TA
Automotive
Grade
O
-40 C to +125
O
C
0.4uA
0.01uA
25uA
10uA
2mA
40mA
1mA
25mA
OPERATING
TEMPERATURE
STANDBY
(I
CCSB1
, Typ.)
(I
CCSB1
, Max)
Operating
(I
CC
, Max)
PKG TYPE
V
CC
=5.0V
V
CC
=3.0V
V
CC
=5.0V
V
CC
=3.0V
V
CC
=5.0V
1MHz
f
Max.
V
CC
=3.0V
1MHz
f
Max.
PDIP-28
SOP-28
TSOP-28
n
PIN CONFIGURATIONS
n
BLOCK DIAGRAM
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
BS62LV256PA
BS62LV256SA
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
A5
A6
A7
A12
A14
A13
A8
A9
A11
Address
Input
Buffer
9
Row
Decoder
512
Memory Array
512X512
512
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
8
Data
Input
Buffer
8
64
Column Decoder
6
CE
8
Column I/O
Write Driver
Sense Amp
8
Data
Output
Buffer
OE
A11
A9
A8
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
BS62LV256TA
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
WE
OE
V
CC
GND
Control
Address Input Buffer
A4 A3 A2 A1 A0 A10
Brilliance Semiconductor, Inc.
reserves the right to change products and specifications without notice.
R0201-BS62LV256A
1
Revision 2.5A
Sep.
2006

BS62LV256PA-70 Related Products

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Description Standard SRAM, 32KX8, 70ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28 Standard SRAM, 32KX8, 70ns, CMOS, PDIP28, 0.600 INCH, GREEN, PLASTIC, DIP-28 Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 0.330 INCH, PLASTIC, SOP-28 Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 0.330 INCH, GREEN, PLASTIC, SOP-28 Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 8 X 13.40 MM, GREEN, TSOP-28 Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP-28
Maker Brilliance Brilliance Brilliance Brilliance Brilliance Brilliance
Parts packaging code DIP DIP SOIC SOIC TSOP TSOP
package instruction DIP, DIP, SOP, SOP, TSOP, TSOP,
Contacts 28 28 28 28 28 28
Reach Compliance Code unknow unknow unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum access time 70 ns 70 ns 70 ns 70 ns 70 ns 70 ns
JESD-30 code R-PDIP-T28 R-PDIP-T28 R-PDSO-G28 R-PDSO-G28 R-PDSO-G28 R-PDSO-G28
length 37.084 mm 37.084 mm 18.11 mm 18.11 mm 11.8 mm 11.8 mm
memory density 262144 bi 262144 bi 262144 bi 262144 bi 262144 bi 262144 bi
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 8 8 8 8 8 8
Number of functions 1 1 1 1 1 1
Number of terminals 28 28 28 28 28 28
word count 32768 words 32768 words 32768 words 32768 words 32768 words 32768 words
character code 32000 32000 32000 32000 32000 32000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
organize 32KX8 32KX8 32KX8 32KX8 32KX8 32KX8
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code DIP DIP SOP SOP TSOP TSOP
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 2.4 V 2.4 V 2.4 V 2.4 V 2.4 V 2.4 V
Nominal supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V
surface mount NO NO YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE
Terminal form THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING GULL WING GULL WING
Terminal pitch 2.54 mm 2.54 mm 1.27 mm 1.27 mm 0.55 mm 0.55 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
width 15.24 mm 15.24 mm 8.407 mm 8.407 mm 8 mm 8 mm
Maximum seat height - - 2.844 mm 2.844 mm 1.2 mm 1.2 mm
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