BS62LV256TAG70 datasheet, PDF - EEWORLD Datasheet

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BS62LV256TAG70: DescriptionStandard SRAM, 32KX8, 70ns, CMOS, PDSO28, 8 X 13.40 MM, GREEN, TSOP-28; Categorystorage storage; File Size235KB，10 Pages; ManufacturerBrilliance

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BS62LV256TAG70 Overview

Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 8 X 13.40 MM, GREEN, TSOP-28

BS62LV256TAG70 Parametric

Parameter Name	Attribute value
Maker	Brilliance
Parts packaging code	TSOP
package instruction	TSOP,
Contacts	28
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum access time	70 ns
JESD-30 code	R-PDSO-G28
length	11.8 mm
memory density	262144 bi
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	28
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
organize	32KX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	2.4 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	AUTOMOTIVE
Terminal form	GULL WING
Terminal pitch	0.55 mm
Terminal location	DUAL
width	8 mm

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Very Low Power CMOS SRAM

32K X 8 bit

Green package materials are compliant to RoHS

BS62LV256

FEATURES

Wide V

operation voltage : 2.4V ~ 5.5V

Very low power consumption :

= 3.0V Operation current : 25mA (Max.) at 70ns

1mA (Max.) at 1MHz

Standby current : 0.01uA(Typ.) at 25

= 5.0V Operation current : 40mA (Max.) at 70ns

2mA (Max.) at 1MHz

Standby current : 0.4uA (Typ.) at 25

High speed access time :

-70

70ns(Max.) at V

3.0~5.5V

Automatic power down when chip is deselected

Easy expansion with CE and OE options

Three state outputs and TTL compatible

Fully static operation

Data retention supply voltage as low as 1.5V

DESCRIPTION

The BS62LV256 is a high performance, very low power CMOS Static

Random Access Memory organized as 32,768 by 8 bits and

operates form a wide range of 2.4V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques provide both

high speed and low power features with typical CMOS standby

current of 0.01uA and maximum access time of 70ns in 3.0V

operation.

Easy memory expansion is provided by an active LOW chip enable

(CE), and active LOW output enable (OE) and three-state output

drivers.

The BS62LV256 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS62LV256 is available in DICE form, JEDEC standard 28 pin

330mil Plastic SOP, 600mil Plastic DIP, 8mmx13.4mm TSOP

(normal type).

POWER CONSUMPTION

POWER DISSIPATION

PRODUCT

FAMILY

BS62LV256PA

BS62LV256SA

BS62LV256TA

Automotive

Grade

-40 C to +125

0.4uA

0.01uA

25uA

10uA

2mA

40mA

1mA

25mA

OPERATING

TEMPERATURE

STANDBY

CCSB1

, Typ.)

CCSB1

, Max)

Operating

, Max)

PKG TYPE

=5.0V

=3.0V

=5.0V

=3.0V

=5.0V

1MHz

Max.

=3.0V

1MHz

Max.

PDIP-28

SOP-28

TSOP-28

PIN CONFIGURATIONS

BLOCK DIAGRAM

A14

A12

DQ0

DQ1

DQ2

GND

•

BS62LV256PA

BS62LV256SA

VCC

A13

A11

A10

DQ7

DQ6

DQ5

DQ4

DQ3

A12

A14

A13

A11

Address

Input

Buffer

Row

Decoder

512

Memory Array

512X512

512

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

Data

Input

Buffer

Column Decoder

Column I/O

Write Driver

Sense Amp

Data

Output

Buffer

A11

A13

VCC

A14

A12

BS62LV256TA

A10

DQ7

DQ6

DQ5

DQ4

DQ3

GND

DQ2

DQ1

DQ0

GND

Control

Address Input Buffer

A4 A3 A2 A1 A0 A10

Brilliance Semiconductor, Inc.

reserves the right to change products and specifications without notice.

R0201-BS62LV256A

Revision 2.5A

Sep.

2006

BS62LV256TAG70 Related Products

	BS62LV256TAG70	BS62LV256PA-70	BS62LV256PAG70	BS62LV256SA-70	BS62LV256SAG70	BS62LV256TA-70
Description	Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 8 X 13.40 MM, GREEN, TSOP-28	Standard SRAM, 32KX8, 70ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28	Standard SRAM, 32KX8, 70ns, CMOS, PDIP28, 0.600 INCH, GREEN, PLASTIC, DIP-28	Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 0.330 INCH, PLASTIC, SOP-28	Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 0.330 INCH, GREEN, PLASTIC, SOP-28	Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP-28
Maker	Brilliance	Brilliance	Brilliance	Brilliance	Brilliance	Brilliance
Parts packaging code	TSOP	DIP	DIP	SOIC	SOIC	TSOP
package instruction	TSOP,	DIP,	DIP,	SOP,	SOP,	TSOP,
Contacts	28	28	28	28	28	28
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum access time	70 ns	70 ns	70 ns	70 ns	70 ns	70 ns
JESD-30 code	R-PDSO-G28	R-PDIP-T28	R-PDIP-T28	R-PDSO-G28	R-PDSO-G28	R-PDSO-G28
length	11.8 mm	37.084 mm	37.084 mm	18.11 mm	18.11 mm	11.8 mm
memory density	262144 bi	262144 bi	262144 bi	262144 bi	262144 bi	262144 bi
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1
Number of terminals	28	28	28	28	28	28
word count	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words
character code	32000	32000	32000	32000	32000	32000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
organize	32KX8	32KX8	32KX8	32KX8	32KX8	32KX8
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP	DIP	DIP	SOP	SOP	TSOP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	IN-LINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V
Nominal supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V
surface mount	YES	NO	NO	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE
Terminal form	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING	GULL WING	GULL WING
Terminal pitch	0.55 mm	2.54 mm	2.54 mm	1.27 mm	1.27 mm	0.55 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
width	8 mm	15.24 mm	15.24 mm	8.407 mm	8.407 mm	8 mm
Maximum seat height	1.2 mm	-	-	2.844 mm	2.844 mm	1.2 mm

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