SEMICONDUCTOR
RoHS
40FD(R)Series
RoHS
Nell High Power Products
Fast Recovery Diodes
(Stud Version), 40A
Available
RoHS*
COMPLIANT
FEATURES
Short reverse recovery time
Low stored charge
Wide current range
Excellent surge capabilities
Stud cathode and stud anode versions
Voltage up to 1200 V
RRM
Compliant to RoHS
TYPICAL APPLICATIONS
DC power supplies
lnverters
Converters
Choppers
Ultrasonic systems
Freewheeling diodes
DO-203AB(DO-5)
PRODUCT SUMMARY
I
F(AV)
40A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
I
FSM
I
2
t
CHARACTERISTICS
40FD(R)
40
UNIT
A
ºC
Maximum T
C
85
475
500
1128
1038
11281
50 HZ
60 HZ
50 HZ
60 HZ
A
A
2
s
I
2
√t
V
RRM
t
rr
T
J
Range
Range
I
2
√s
V
ns
ºC
200 to 1200
See Recovery Characteristics table
-40 to 125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
V
RRM
, MAXIMUM
PEAK REPETITIVE
REVERSE VOLTAGE
T
J
= -40°C TO 125°C
V
V
RSM
, MAXIMUM PEAK
NON-REPETITIVE
REVERSE VOLTAGE
T
J
= 25°C TO 125°C
V
I
FM
, MAXIMUM PEAK REVERSE
CURRENT AT RATED V
RRM
mA
T
J
= 25°C
T
J
= 125°C
02
04
06
40FD(R)
08
10
12
200
400
600
800
1000
1200
300
500
700
900
1100
1300
0.1
10
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Page 1 of 6
SEMICONDUCTOR
RoHS
40FD(R)Series
RoHS
Nell High Power Products
FORWARD CONDUCTION
PARAMETER
SYMBOL
I
F(AV)
I
F(RMS)
I
FRM
TEST CONDITIONS
180° conduction, half sine wave
40FD(R)
40
85
63
UNIT
A
ºC
Maximum average forward current
at maximum case temperature
Maximum RMS forward current
Maximum peak repetitive forward current
Maximum peak, one-cycle
non-reptitive surge current
A
A
Sinusoidal half wave, 30°
conduction
t
= 10ms
t
= 8.3ms
t
= 10ms
t
=
8.3ms
t
= 10ms
t
= 8.3ms
Sinusoidal half wave, 100% V
RRM
reapplied, initial T
J
=T
J
maximum
Sinusoidal half wave, no voltage
reapplied, initial T
J
=T
J
maximum
100% V
RRM
reapplied,
initial T
J
=T
J
maximum
no voltage reapplied,
initial T
J
=T
J
maximum
220
400
420
475
500
800
732
1128
1038
11281
1.081
6.33
I
FSM
A
Maximum l²t for fusing
I
2
t
t
= 10ms
t
= 8.3ms
A
2
s
Maximum l²√t for fusing
(1)
Maximum value of threshold voltage
Maximum value of forward slope resistance
Maximum forward voltage drop
Note :
(1)
l
2
t for time t
x
=1
2
√
t
√t
x
I
2
√t
V
F(TO)
r
F
t = 0.1 ms to 10 ms, no voltage reapplied
A
2
√
s
T
J
= 125°C
T
J
= 25°C; l
FM
= 125A
V
mΩ
V
V
FM
1.95
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
T
J
= 25°C, I
F
= 1A, I
R
= 1.0A,
I
RR
= 250mA (RG#1 CKT)
Typical reverse recovery time
t
rr
T
J
= 25°C, I
F
= 1A to V
R
= 30V ,
-dl
F
/dt = 100 A/µs
T
J
= 25°C, -dl
F
/dt = 25 A/µs,
l
FM
=
π
x rated l
F(AV)
T
J
= 25°C, I
F
= 1A to V
R
= 30V,
-dl
F
/dt = 100 A/µs
T
J
= 25°C, -dl
F
/dt = 25 A/µs,
l
FM
=
π
x rated l
F(AV)
40FD(R)
02 to 06
200
UNIT
08 to 12
500
70
180
ns
200
160
500
750
Typical reverse recovered charge
Q
rr
nC
240
1300
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Page 2 of 6
SEMICONDUCTOR
RoHS
40FD(R)Series
RoHS
Nell High Power Products
THERMAL AND MECHANICAL SPECIFCATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
SYMBOL
T
J
T
stg
R
thJC
R
thCS
TEST CONDITIONS
40FD(R)
-40 to125
UNITS
ºC
- 40 to150
DC operation
Mounting surface, smooth, flat and greased
Not lubricated threads, tighting on nut
(1)
0.60
K/W
0.25
3.4(30)
2.3(20)
4.2(37)
N
·
m
(lbf
·
in)
Maximum allowable mounting torque
(+0%, -10%)
Lubricated thread, tighting on nut
(1)
Not lubricated threads, tighting on hexagon
(2)
(2)
Lubricated thread, tighting on
hexagon
Approximate weight
Case style
JEDEC
3.2(28)
g
25
oz.
0.88
DO-203AB (DO-5)
Note :
(1) Recommended for pass-through holes
(2) Recommended for holed threaded heatsinks
R
thJC
CONDUCTION
CONDUCTION ANGEL
180˚
120˚
60˚
30˚
Note
40FD(R)
SINUSOIDAL CONDUCTION
0.14
0.15
0.31
0.52
TEST CONDUCTIONS
0.03
0.14
0.30
0.50
T
J
= 150°C
UNITS
RECTANGULAR CONDUCTION
K/W
• The table above shows the increment of thermal resistance R
thJC
when devices
operate at different conduction angles than DC
ORDERING INFORMATION SCHEME
40 FD R
Current
40 = 40A
06
A
Diode type
FD = Fast Recovery Diode
Polarity
R = Reverse, Anode on Stud
None = standard, Cathode on Stud
Voltage
06 = 600V
08 = 800V
10 = 1000V
12 = 1200V
Trr value
A
= 200
ns Max.
B
= 500
ns Max.
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Page 3 of 6
SEMICONDUCTOR
RoHS
40FD(R)Series
RoHS
N
ell
High Power Products
Fig.1 Reverse recovery time test waveform
l
F
l
FM
d
lF
d
t
t
rr
t
1/4 l
RM(REC)
l
RM(REC)
Q
RR
l
F
l
F
,l
FM
= Peak forward current prior to commutation
d lF /d t = Rate of fall of forward current
l RM(REC) = Peak reverse recovery current
t rr = Reverse recovery time
Q RR = Reverse recovered charge
Fig.2 Current rating nomogram (Sinusoidal Waveforms)
Maximum average forward power loss (W)
70
ø = 180°
120°
90°
Conduction angle
ø
180°
120°
90°
60°
30°
40 FD( R) Se ries
T
J
= 125°C
60
50
40
60°
30°
1.
1 .5
2 .0
0-
-
▲
R
RMS Limit
-
▲
R
0.14
0.15
0.20
0.31
0.52
30
20
10
0
0
5
10
15
20
Conduction Angle
3-
▲
R
4 -
▲
R
5 -
▲
R
25
30
35
40 10 20 30 40 50 60 70 80
90
100
Maximum allowable ambient temperature (°C)
Average forward current (A)
Fig. 3 Current rating nomogram (Rectangular waveforms)
Maximum average forward power loss (W)
100
R
5-
▲
R
0.
7-
▲
R
1.
0-
▲
R
1 .5
-
▲
R
2. 0
-
▲
R
0.
th
60
50
40
30
20
10
0
0
10
K/
W
60°
DC
RMS Limit
3 -
▲
4 -
▲
ø
Conduction Angle
R
180°
0.08
R
120°
0.14
60°
030
20
30
40
50
60
70
10 20 30 40 50 60 70 80 90 100
Maximum allowable ambient temperature (°C)
Average forward current (A)
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Page 4 of 6
▲
R
0
80
70
SA
=
0.
ø = DC
180°
120°
3-
▲
R
K/W
90
40FD(R)Series
T
J
= 125°C
Conduction angle
ø
▲
R
▲
R
K/W
R
t
▲
R
5-
0.
hS
0.
7-
A
=
0.
▲
R
▲
R
3-
K/
W
SEMICONDUCTOR
RoHS
40FD(R)Series
RoHS
N
ell
High Power Products
Fig .4 Maximum high level forward power
loss vs. average forward current
Maximum average forward power loss (W)
10
4
40FD(R)Series
Fig. 5 Maximum forward voltage vs. forward
current.
10
3
40FD(R)Series
ø =180°
120°
60°
30°
10
3
ø =DC
180°
120°
60°
30°
Instantaneous forward current (A)
T
J
= 125°C
10
2
T
J
= 125°C
10
2
10
T
J
= 25°C
10
10
10
2
10
3
10
4
1
0
0.5 1.0
1.5
2.0
2.5
3.0
3.5 4.0
Instantaneous forward voltage (V)
Average forward current (A)
Fig.6 Average forward current vs. maximum
allowable case temperature.
Maximum allowable case temperature (˚C)
125
40FD(R)Series
Fig .7 Typical reverse recovery time vs.
rate of fall of forward current.
1000
600
500
400
300
200
T
J
= 25°C
T
J
= 125°C
l
F
= 125A
l
F
= 20A
l
F
= 1A
110
100
90
80
70
60
50
40
0
ø =180°
120°
90°
60°
30°
ø =180°
120°
60°
30°
Reverse recovery time (ns)
100
60
50
40
30
20
l
F
= 125A
l
F
= 20A
l
F
= 1A
DC
40FD(R), 200 to 600V
10
10
20
30
40
50
60
70
1
3
10
30
100
Average forward current (A)
Rate of fall of forward current (A/µs)
Fig .8 Typical recovered charge vs.
rate of fall of forward current.
10
4
40FD(R), 200 to 600V
Fig .9 Typical reverse recovery time vs.
rate of fall of forward current.
Recovered charge (nC)
10
3
l
F
= 125A
l
F
= 20A
l
F
= 1A
Reverse recovery time (ns)
6000
5000
4000
3000
2000
1000
600
500
400
300
200
40FD(R), 800 to 1200V
T
J
= 125°C
l
F
= 125A
l
F
= 20A
l
F
= 1A
10
2
T
J
2
=1
5°
C
10
T
J
5
=2
°C
T
J
= 25°C
l
F
= 125A
l
F
= 20A
l
F
= 1A
1
1
3
10
30
100
100
1
3
10
30
100
Rate of fall of forward current (A/µs)
Rate of fall of forward current (A/µs)
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Page 5 of 6
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