TTL compatible input and TTL/CMOS compatible output
levels
Three-state data bus
Low operating and standby current
- Operating: 80mA maximum @25MHz
•
Derating: 3mA/MHz
- Standby: 1.5mA maximum (post-rad)
Radiation-hardened process and design; total dose
irradiation testing to MIL-STD-883, Method 1019
-
-
-
Total dose: 100Krad to 1Megarad(Si)
Onset LET: 57 MeV-cm
2
/mg
SEL Immune >110 MeV-cm
2
/mg
PRODUCT DESCRIPTION
The UT28F256QLE amorphous silicon redundant ViaLink
TM
PROM is a high performance, asynchronous, radiation-
hardened, 32K x 8 programmable memory device. The
UT28F256QLE PROM features fully asychronous operation
requiring no external clocks or timing strobes. An advanced
radiation-hardened twin-well CMOS process technology is used
to implement the UT28F256QLE. The combination of radiation-
hardness, fast access time, and low power consumption make the
UT28F256QE ideal for high speed systems designed for
operation in radiation environments.
-
AC and DC testing at factory
No post program conditioning
Packaging options:
- 28-lead 50-mil center flatpack (0.490 x 0.74)
V
DD
: 5.0 volts
+
10%
Standard Microcircuit Drawing 5962-96891
QML Q & V compliant part
A(14:0)
DECODER
MEMORY
ARRAY
SENSE AMPLIFIER
CE
PE
OE
PROGRAMMING
CONTROL
LOGIC
DQ(7:0)
Figure 1. PROM Block Diagram
1
DEVICE OPERATION
The UT28F256QLE has three control inputs: Chip Enable (CE),
Program Enable (PE), and Output Enable (OE); fifteen address
inputs, A(14:0); and eight bidirectional data lines, DQ(7:0). CE
is the device enable input that controls chip selection, active,
and standby modes. Asserting CE causes I
DD
to rise to its active
value and decodes the fifteen address inputs to select one of
32,768 words in the memory. PE controls program and read
operations. During a read cycle, OE must be asserted to enable
the outputs.
PIN CONFIGURATION
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
DD
PE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
PIN NAMES
A(14:0)
CE
OE
PE
DQ(7:0)
Address
Chip Enable
Output Enable
Program Enable
Data Input/Data Output
Table 1. Device Operation Truth Table
1
OE
X
0
1
1
PE
1
1
0
1
CE
1
0
0
0
I/O MODE
Three-state
Data Out
Data In
Three-state
MODE
Standby
Read
Program
Read
2
Notes:
1. “X” is defined as a “don’t care” condition.
2. Device active; outputs disabled.
ABSOLUTE MAXIMUM RATINGS
1
(Referenced to V
SS
)
SYMBOL
V
DD
V
I/O
T
STG
P
D
T
J
Θ
JC
I
I
PARAMETER
DC supply voltage
Voltage on any pin
Storage temperature
Maximum power dissipation
Maximum junction temperature
Thermal resistance, junction-to-case
2
DC input current
LIMITS
-0.3 to 6.0
-0.5 to (V
DD
+ 0.5)
-65 to +150
1.5
+175
3.3
UNITS
V
V
°C
W
°C
°C/W
mA
±
10
Notes:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the
device at these or any other conditions beyond limits indicated in the operational sections of this specification is not recommended. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
2. Test per MIL-STD-883, Method 1012, infinite heat sink.
2
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
T
C
V
IN
PARAMETER
Positive supply voltage
Case temperature range
DC input voltage
LIMITS
4.5 to 5.5
-55 to +125
0 to V
DD
UNITS
V
°C
V
DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)*
(V
DD
= 5.0V
±
10%; -55°C < T
C
< +125°C)
SYMBOL
V
IH
V
IL
V
OL1
V
OL2
V
OH1
V
OH2
C
IN 1
PARAMETER
High-level input voltage
Low-level input voltage
Low-level output voltage
Low-level output voltage
High-level output voltage
High-level output voltage
Input capacitance , all inputs
except PE
Input Capacitance PE
C
IO 1
I
IN
Bidirectional I/O capacitance
ƒ
= 1MHz, V
DD
= 5.0V
V
OUT
= 0V
V
IN
= 0V to V
DD
, all pins except PE
V
IN
= V
DD
, PE only
V
O
= 0V to V
DD
V
DD
= 5.5V
OE = 5.5V
V
DD
= 5.5V, V
O
= V
DD
V
DD
= 5.5V, V
O
= 0V
TTL inputs levels (I
OUT
= 0), V
IL
=
0.2V
V
DD
, PE = 5.5V
CMOS input levels V
IL
= V
SS
+0.25V
CE = V
DD
- 0.25 V
IH
= V
DD
- 0.25V
-5
(TTL)
(TTL)
I
OL
= 4.0mA, V
DD
= 4.5V (TTL)
I
OL
= 200μA, V
DD
= 4.5V (CMOS)
I
OH
= -200μA, V
DD
= 4.5V (CMOS)
I
OH
= -2.0mA, V
DD
= 4.5V (TTL)
ƒ
= 1MHz, V
DD
= 5.0V
V
IN
= 0V
V
DD
-0.1
2.4
15
CONDITION
MINIMUM
2.4
0.8
0.4
V
SS
+ 0.10
MAXIMUM
UNIT
V
V
V
V
V
V
pF
20
15
pF
μA
μA
μA
Input leakage current
+5
132
+10
I
OZ
Three-state output leakage
current
-10
I
OS 2,3
I
DD1
(OP)
4
Short-circuit output current
120
-120
mA
mA
Supply current operating
@22.2MHz (45ns product)
Supply current standby
80
1.5
mA
mA
I
DD2
(SB)
post-rad
Notes:
* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019 at 1E6 rad(Si).
1. Measured only for initial qualification, and after process or design changes that could affect input/output capacitance.
2. Supplied as a design limit but not guaranteed or tested.
3. Not more than one output may be shorted at a time for maximum duration of one second.
4. Derates at 3.2mA/MHz.
3
READ CYCLE
A combination of PE greater than V
IH
(min), and CE less than
V
IL
(max) defines a read cycle. Read access time is measured
from the latter of device enable, output enable, or valid address
to valid data output.
An address access read is initiated by a change in address inputs
while the chip is enabled with OE asserted and PE deasserted.
Valid data appears on data output, DQ(7:0), after the specified
t
AVQV
is satisfied. Outputs remain active throughout the entire
cycle. As long as device enable and output enable are active, the
address inputs may change at a rate equal to the minimum read
cycle time.
AC CHARACTERISTICS READ CYCLE (Post-Radiation)*
(V
DD
= 5.0V
±
10%; -55°C < T
C
< +125°C)
SYMBOL
t
AVAV1
t
AVQV
t
AXQX2
t
GLQX2
t
GLQV
t
GHQZ
t
ELQX2
t
ELQV
t
EHQZ
PARAMETER
Read cycle time
Read access time
Output hold time
OE-controlled output enable time
OE-controlled access time
OE-controlled output three-state time
CE-controlled output enable time
CE-controlled access time
CE-controlled output three-state time
The chip enable-controlled access is initiated by CE going active
while OE remains asserted, PE remains deasserted, and the
addresses remain stable for the entire cycle. After the specified
t
ELQV
is satisfied, the eight-bit word addressed by A(14:0)
appears at the data outputs DQ(7:0).
Output enable-controlled access is initiated by OE going active
while CE is asserted, PE is deasserted, and the addresses are
stable. Read access time is t
GLQV
unless t
AVQV
or t
ELQV
have
not been satisfied.
28F256-45
MIN
MAX
45
45
0
0
15
15
0
45
15
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes:
* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019 at 1E6 rads(Si).
1. Functional test.
2. Three-state is defined as a 200mV change from steady-state output voltage.
4
t
AVAV
A(14:0)
CE
t
ELQX
t
ELQV
OE
t
GLQV
DQ(7:0)
t
GLQX
t
AVQV
t
AXQX
t
GHQZ
t
AVQV
t
EHQZ
Figure 2. PROM Read Cycle
RADIATION HARDNESS
The UT28F256QLE PROM incorporates special design and
layout features which allow operation in high-level radiation
environments. Aeroflex Colorado Springs has developed special
low-temperature processing techniques designed to enhance the
total-dose radiation hardness of both the gate oxide and the field
oxide while maintaining the circuit density and reliability. For
RADIATION HARDNESS DESIGN SPECIFICATIONS
1
Total Dose
Latchup LET Threshold
Memory Cell LET Threshold
Logic Onset LET
SEU Cross Section
transient radiation hardness and latchup immunity, UTMC
builds all radiation-hardened products on epitaxial wafers using
an advanced twin-tub CMOS process. In addition, UTMC pays
special attention to power and ground distribution during the
design phase, minimizing dose-rate upset caused by rail
collapse.
1E6
>110
>100
>57
9.4E-7
5.1E-15
rad(Si)
MeV-cm
2
/mg
MeV-cm
2
/mg
MeV-cm
2
/mg
cm
2
/device
errors/device day
Error rate - geosynchronous orbit, Adams 90% worst case environment
Note:
1. The PROM will not latchup during radiation exposure under recommended operating conditions.
[color=#000000]TI Designs[font=宋体][size=10.5pt]is a reference design library carefully built by TI, covering a wide range of TI analog, embedded processing and wireless connectivity products. Each des...
I am using k9f1gu08m, a large-capacity nand flash, and I have found a jtag programming program that supports it, but I cannot read the ID number. I have measured all the waveforms of reading and writi...
[i=s]This post was last edited by paulhyde on 2014-9-15 09:35[/i] Hehe... I have already made money for the author, so I will share it with you, don't blame me! :)...
With the promotion of the construction of intelligent communities in the country, anti-theft systems have become essential equipment for intelligent communities. Especially in recent years, the urg...[Details]
When choosing a laptop battery, you should consider several factors, such as power, appearance, and quality.
Regarding power, we often see that a manufacturer uses values such as the number ...[Details]
Introduction
Power subsystems are becoming more and more integrated into the overall system. Power systems have moved from being separate "essential dangerous devices" to being monitorable...[Details]
Images in science fiction movies often break through the limits of reality, such as in the movie "Minority Report." Tom Cruise uses a multi-touch screen to browse information. Capacitive sensing te...[Details]
The data collector of the automatic weather station is generally designed based on a single-chip microcomputer or a PC/104 bus controller. It has the characteristics of good compatibility with PC, low...[Details]
Xiaomi, a well-known Internet phone in mainland China, won a million-unit order contract from China Unicom on November 20 last year, which made Xiaomi famous in mainland China. In April this year...[Details]
1. Disadvantages of choosing too high a voltage level
Choosing too high a voltage level will result in too high an investment and a long payback period. As the voltage level increases, the...[Details]
We know that the inverter consists of two parts: the main circuit and the control circuit. Due to the nonlinearity of the main circuit (switching action), the inverter itself is a source of harmoni...[Details]
The TPS92210 is a single-stage LED lighting pulse width modulation (PWM) controller. The TRIAC dimmable solution not only regulates the LED current, but also achieves a power factor close to 1. The...[Details]
Introduction
In industrial control, speed measurement is often required. Generally, a contact tachometer is used. This tachometer must be placed against the center of the shaft to measure. It...[Details]
The above is to use MB1404 as a stereo composite signal transmitter. You can use the internal high-frequency amplifier and oscillator or not! According to my experience, I still recommend beginners...[Details]
0 Introduction
In order to improve the automation control of shortwave transmitters, so that they can automatically process from far to near, the technicians here use the ICS system to complete the ...[Details]
1 Development of LED Film and Television Lighting
1.1 The significance of developing film and television lighting
Lighting power consumption accounts for a large proportion of the total p...[Details]
introduction
At present, the research on micron and nanotechnology is very active, which has led to the rapid development of microtechnology and micro-mechanical electronic system (MEMS) t...[Details]
Cars equipped with xenon headlights are already common on the road. Whether they are standard equipment on high-end cars or embellishments on modified cars, xenon lamps are gradually becoming a sym...[Details]
51mcu
京公网安备 11010802033920号
EEWORLD
