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MBR5150

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size477KB,4 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
Download Datasheet Parametric View All

MBR5150 Overview

Rectifier Diode,

MBR5150 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSangdest Microelectronics (Nanjing) Co., Ltd.
package instructionR-PSFM-T2
Reach Compliance Codecompli
Other featuresFREE WHEEELING DIODE
Minimum breakdown voltage150 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.93 V
JEDEC-95 codeTO-220AC
JESD-30 codeR-PSFM-T2
Maximum non-repetitive peak forward current100 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage150 V
Maximum reverse current1000 µA
Reverse test voltage150 V
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
MBR5150
Technical Data
Data Sheet N1779, Rev.A
MBR5150 SCHOTTKY RECTIFIER
Features
150
C
T
J
operation
Low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced
mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
TO-220AC
Circuit Diagram
Applications
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak One Cycle Non-Repetitive Surge
Current
Symbol
V
RRM
V
RWM
V
R
I
F (AV)
I
FSM
Condition
-
50% duty cycle @Tc=100°C,
rectangular wave form
8.3ms, Half Sine pulse
Max.
150
5
100
Units
V
A
A
Electrical Characteristics:
Characteristics
Forward Voltage Drop*
Reverse Current*
Junction Capacitance
Series Inductance
Voltage Rate of Change
* Pulse width < 300 µs, duty cycle < 2%
Symbol
V
F1
V
F2
I
R1
I
R2
C
T
L
S
dv/dt
Condition
@ 5A, Pulse, T
J
= 25
C
@ 5A, Pulse, T
J
= 125
C
@V
R
= rated V
R,
T
J
= 25
C
@V
R
= rated V
R
, T
J
= 125
C
@V
R
= 5V, T
C
= 25
C
f
SIG
= 1MHz
Measured lead to lead 5 mm from
package body
-
Typ.
0.85
0.70
0.001
0.1
90
8.0
-
Max.
0.93
0.73
1.0
7.0
200
-
10,000
Units
V
V
mA
mA
pF
nH
V/s
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
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