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RA3505

Description
Rectifier Diode, 1 Phase, 1 Element, 35A, 50V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size124KB,1 Pages
ManufacturerInternational Semiconductor Inc
Download Datasheet Parametric View All

RA3505 Overview

Rectifier Diode, 1 Phase, 1 Element, 35A, 50V V(RRM), Silicon

RA3505 Parametric

Parameter NameAttribute value
MakerInternational Semiconductor Inc
package instructionO-PEDB-N2
Reach Compliance Codeunknow
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeO-PEDB-N2
Maximum non-repetitive peak forward current400 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current35 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum repetitive peak reverse voltage50 V
Maximum reverse recovery time0.3 µs
surface mountYES
Terminal formNO LEAD
Terminal locationEND
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