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EN25F10A-104GIP

Description
Flash, 128KX8, PDSO8, 0.150 INCH, HALOGEN FREE, ROHS AND REACH COMPLIANT, SOP-8
Categorystorage    storage   
File Size1MB,62 Pages
ManufacturerESMT
Websitehttp://www.esmt.com.tw/
Environmental Compliance
Elite Semiconductor Memory Technology Inc. (ESMT) is a professional IC design company founded by Dr. Hu Zhao in June 1998. Its headquarters is located in Hsinchu Science Park, Taiwan. The company's main business includes research, development, manufacturing, sales and related technical services of IC products. It was listed on the Taiwan Stock Exchange in March 2002.
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EN25F10A-104GIP Overview

Flash, 128KX8, PDSO8, 0.150 INCH, HALOGEN FREE, ROHS AND REACH COMPLIANT, SOP-8

EN25F10A-104GIP Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerESMT
package instructionSOP, SOP8,.25
Reach Compliance Codeunknow
Spare memory width1
Maximum clock frequency (fCLK)104 MHz
Data retention time - minimum20
Durability100000 Write/Erase Cycles
JESD-30 codeR-PDSO-G8
length4.9 mm
memory density1048576 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of terminals8
word count131072 words
character code128000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP8,.25
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialSERIAL
Programming voltage2.7 V
Maximum seat height1.75 mm
Serial bus typeSPI
Maximum standby current0.00002 A
Maximum slew rate0.028 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
typeNOR TYPE
width3.9 mm
write protectHARDWARE/SOFTWARE

EN25F10A-104GIP Preview

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EN25F10A
EN25F10A
1 Megabit Serial Flash Memory with 4Kbyte Uniform Sector
FEATURES
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Single power supply operation
Full voltage range: 2.7-3.6 volt
Serial Interface Architecture
SPI Compatible: Mode 0 and Mode 3
1 M-bit Serial Flash
1 M-bit/128 K-byte/512 pages
256 bytes per programmable page
Standard, Dual or Quad SPI
Standard SPI: CLK, CS#, DI, DO, WP#, HOLD#
Dual SPI: CLK, CS#, DQ
0
, DQ
1
, WP#, HOLD#
Quad SPI: CLK, CS#, DQ
0
, DQ
1
, DQ
2
, DQ
3
High performance
104MHz clock rate for Standard SPI
104MHz clock rate for two data bits
104MHz clock rate for four data bits
Low power consumption
10mA typical active current
1
μA
typical power down current
Uniform Sector Architecture:
32 sectors of 4-Kbyte
4 blocks of 32-Kbyte
2 blocks of 64-Kbyte
Any sector or block can be erased individually
Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
High performance program/erase speed
- Page program time: 0.7ms typical
- Sector erase time: 30ms typical
- 32KB Block erase time 100ms typical
- 64KB Block erase time 200ms typical
- Chip erase time: 0.4 seconds typical
Lockable 512 byte OTP security sector
Support Serial Flash Discoverable
Parameters (SFDP) signature
Read Unique ID Number
Minimum 100K endurance cycle
Package Options
- 8 pins SOP 150mil body width
- 8 pins VSOP 150mil body width
- 8 contact USON 2x3 mm
- 8 contact VDFN 5x6 mm
- All Pb-free packages are compliant RoHS,
Halogen-Free and REACH.
Industrial temperature Range
GENERAL DESCRIPTION
The EN25F10A is a 1 Megabit (128 K-byte) Serial Flash memory, with enhanced write protection
mechanisms. The EN25F10A supports the standard Serial Peripheral Interface (SPI), and a high
performance Dual/Quad output as well as Dual/Quad I/O using SPI pins: Serial Clock, Chip Select,
Serial DQ
0
(DI), DQ
1
(DO), DQ
2
(WP#) and DQ
3
(HOLD#). SPI clock frequencies of up to 104MHz are
supported allowing equivalent clock rates of 208MHz (104MHz x 2) for Dual Output and 416MHz
(104MHz x 4) for Quad Output when using the Dual/Quad I/O Fast Read instructions. The memory can
be programmed 1 to 256 bytes at a time, using the Page Program instruction.
The EN25F10A is designed to allow either single
Sector/Block
at a time or full chip erase operation. The
EN25F10A can be configured to protect part of the memory as the software protected mode. The
device can sustain a minimum of 100K program/erase cycles on each sector
or block
.
This Data Sheet may be revised by subsequent versions
©2013 Eon Silicon Solution, Inc.,
1
or modifications due to changes in technical specifications.
Rev. A, Issue Date: 2013/11/12
www.eonssi.com
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