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HFM205-B-H

Description
Rectifier Diode, 1 Phase, 1 Element, 2A, 600V V(RRM), Silicon, DO-214AA, SMB, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size91KB,7 Pages
ManufacturerFORMOSA
Websitehttp://www.formosams.com/
Environmental Compliance
Download Datasheet Parametric View All

HFM205-B-H Overview

Rectifier Diode, 1 Phase, 1 Element, 2A, 600V V(RRM), Silicon, DO-214AA, SMB, 2 PIN

HFM205-B-H Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFORMOSA
package instructionSMB, 2 PIN
Reach Compliance Codeunknow
ECCN codeEAR99
applicationEFFICIENCY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.7 V
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-F2
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage600 V
Maximum reverse current5 µA
Maximum reverse recovery time0.075 µs
surface mountYES
Terminal formFLAT
Terminal locationDUAL

HFM205-B-H Preview

Chip High Effciency Rectifiers
HFM201-B THRU HFM207-B
List
Formosa MS
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2
Rating and characteristic curves........................................................ 3
Pinning information........................................................................... 4
Marking........................................................................................... 4
Suggested solder pad layout............................................................. 4
Packing information.......................................................................... 5
Reel packing.................................................................................... 6
Suggested thermal profiles for soldering processes............................. 6
High reliability test capabilities........................................................... 7
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
D
Page.
7
Page 1
DS-121320
Chip High Effciency Rectifiers
HFM201-B THRU HFM207-B
2.0A Surface Mount High
Effciency Rectifiers-50-1000V
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
High current capability.
Ultrafast recovery time for high efficiency.
High surge current capability.
Glass passivated chip junction.
Lead-free parts meet RoHS requirments.
Suffix "-H" indicates Halogen free parts, ex. HFM201-B-H.
Formosa MS
SMB
0.213(5.4)
0.197(5.0)
Package outline
0.016(0.4) Typ.
0.142(3.6)
0.126(3.2)
Mechanical data
Epoxy:UL94-V0 rated flame retardant
Case : Molded plastic, DO-214AA / SMB
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
0.032(0.8) Typ.
0.075(1.9)
0.067(1.7)
0.032 (0.8) Typ.
Dimensions in inches and (millimeters)
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : Approximated 0.09 gram
Maximum ratings and Electrical Characteristics
(AT
PARAMETER
Forward rectified current
Forward surge current
See Fig.2
CONDITIONS
T
A
=25
o
C unless otherwise noted)
Symbol
I
O
I
FSM
I
R
C
J
T
STG
-65
25
+175
MIN.
TYP.
MAX.
2.0
50
5.0
150
UNIT
A
A
8.3ms single half sine-wave (JEDEC methode)
V
R
= V
RRM
T
J
= 25
O
C
V
R
= V
RRM
T
J
= 125 C
f=1MHz and applied 4V DC reverse voltage
O
Reverse current
Diode junction capacitance
Storage temperature
*1
V
RRM
(V)
50
100
200
400
600
800
1000
V
RMS
*2
(V)
35
70
140
280
420
560
700
μA
pF
O
C
SYMBOLS
HFM201-B
HFM202-B
HFM203-B
HFM204-B
HFM205-B
HFM206-B
HFM207-B
*3
V
R
(V)
50
100
200
400
600
800
1000
*4
V
F
(V)
*5
t
rr
(ns)
Operating
temperature
T
J
, (
O
C)
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
1.00
1.30
50
-55 to +150
*4 Maximum forward voltage@I
F
=2.0A
1.70
75
*5 Maximum Reverse recovery time, note 1
Note 1. Reverse recovery time test condition, I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
D
Page.
7
Page 2
DS-121320
Rating and characteristic curves (HFM201-B THRU HFM207-B)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
2.4
2.0
1.6
1.2
0.8
0.4
0
0
P.C.B. Mounted on
0.2" x 0.2" (5 mm x 5 mm)
Copper Pad Areas
10
M2
03
-B
HF
04
-B
M2
01
-B
~
INSTANTANEOUS FORWARD CURRENT,(A)
HF
HF
.1
T
J
=25 C
Pulse Width 300us
1% Duty Cycle
H
1.0
FM
20
5-
B~
M2
H
FM
20
7-
B
25
50
75
100
125
150
175
LEAD TEMPERATURE (°C)
.01
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWAARD SURGE CURRENT,(A)
50
.001
.4
.6
.8
1.0
1.2
1.4
1.6
1.8
40
T
J
=25 C
8.3ms Single Half
Sine Wave
FORWARD VOLTAGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50
W
NONINDUCTIVE
10
W
NONINDUCTIVE
30
JEDEC method
20
10
(+)
25Vdc
(approx.)
( )
1
W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
D.U.T.
( )
PULSE
GENERATOR
(NOTE 2)
(+)
0
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
140
trr
+0.5A
|
|
|
|
|
|
|
|
JUNCTION CAPACITANCE,(pF)
120
100
80
60
40
20
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
D
Page.
7
Page 3
DS-121320
Chip High Effciency Rectifiers
HFM201-B THRU HFM207-B
Pinning information
Pin
Pin1
Pin2
cathode
anode
Simplified outline
Formosa MS
Symbol
1
2
1
2
Marking
Type number
HFM201-B
HFM202-B
HFM203-B
HFM204-B
HFM205-B
HFM206-B
HFM207-B
Marking code
H21
H22
H23
H24
H25
H26
H27
Suggested solder pad layout
C
A
B
Dimensions in inches and (millimeters)
PACKAGE
SMB
A
0.142 (3.60)
B
0.059 (1.50)
C
0.118 (3.00)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
D
Page.
7
Page 4
DS-121320
Chip High Effciency Rectifiers
HFM201-B THRU HFM207-B
Packing information
P
0
P
1
d
E
F
B
W
Formosa MS
A
P
D
2
T
C
D
W
1
D
1
unit:mm
Item
Symbol
Tolerance
SMB
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D
1
D
D
1
D
2
E
F
P
P
0
P
1
T
W
W
1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
3.81
5.74
2.24
1.50
330.00
50.00
178.00
62.00
13.00
1.75
5.50
8.00
4.00
2.00
0.23
12.00
18.00
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
D
Page.
7
Page 5
DS-121320
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