EDC4UV6442-60TG-S datasheet, PDF

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EDC4UV6442-60TG-S: Description4MX64 EDO DRAM MODULE, 60ns, DMA168, DIMM-168; Categorystorage storage; File Size134KB，8 Pages; ManufacturerFUJITSU; Websitehttp://edevice.fujitsu.com/fmd/en/index.html

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EDC4UV6442-60TG-S Overview

4MX64 EDO DRAM MODULE, 60ns, DMA168, DIMM-168

EDC4UV6442-60TG-S Parametric

Parameter Name	Attribute value
Maker	FUJITSU
Parts packaging code	DIMM
package instruction	,
Contacts	168
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	FAST PAGE WITH EDO
Maximum access time	60 ns
Other features	RAS ONLY/CAS BEFORE RAS REFRESH
Spare memory width	32
JESD-30 code	R-XDMA-N168
memory density	268435456 bi
Memory IC Type	EDO DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	168
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Certification status	Not Qualified
refresh cycle	2048
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal location	DUAL

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September 1996

Revision 1.0

DATA SHEET

EDC4UV644(2/4)-(60/70)(J/T)G-S

32MByte (4M x 64) CMOS EDO DRAM Module - 3.3V

General Description

The EDC4UV644(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module

organized as 4M words by 64 bits, in a 168-pins, dual-in-line (DIMM) memory modules.

The module utilizes sixteen, Fujitsu MB81V1(7/6)405A-(60/70) (PJ/FN) CMOS 4Mx4 EDO dynamic RAMs in a surface mount

package on an epoxy laminate substrate. Each device is accompanied by a decoupling capacitor for improved noise immunity.

Control lines provided are such that byte control is possible. Serial PD on the module is provided by using 128 byte serial EEPROM.

Features

• High Density: 32MByte

• Fast Access Time of 60/70 ns (max.)

• Low Power:

6.3/5.5 W (max.

5.2/4.6 W (max.)

115mW (max.)

58mW (max.)

- Active (60/70 ns) : 2KR

- Active (60/70 ns) : 4KR

- Standby (LVTTL)

- Standby (CMOS)

• LVTTL-compatible inputs and outputs

• Separate power and ground planes to improve noise immunity

• Single power supply of 3.3V±0.3V

• Height: 1.00 inch

ABSOLUTE MAXIMUM RATINGS

Item

Voltage on any pin relative to V

Power Dissipation

Operating Temperature

Storage Temperate

Short Circuit Output Current

Symbol

opr

stg

Ratings

-0.5 to +4.6

0 to +70

-55 to +125

Unit

RECOMMENDED DC OPERATING CONDITIONS

= 0 to +70

°C)

Symbol

Parameter

Supply Voltage

Ground

Input High voltage

Input Low voltage

Min

3.0

2.0

-0.3

Typ

3.3

Max

3.6

+0.3

0.8

Unit

Fujitsu Microelectronics, Inc.

EDC4UV6442-60TG-S Related Products

	EDC4UV6442-60TG-S	EDC4UV6442-70JG-S	EDC4UV6442-60JG-S	EDC4UV6444-70JG-S	EDC4UV6444-60JG-S	EDC4UV6444-60TG-S
Description	4MX64 EDO DRAM MODULE, 60ns, DMA168, DIMM-168	4MX64 EDO DRAM MODULE, 70ns, DMA168, DIMM-168	4MX64 EDO DRAM MODULE, 60ns, DMA168, DIMM-168	4MX64 EDO DRAM MODULE, 70ns, DMA168, DIMM-168	4MX64 EDO DRAM MODULE, 60ns, DMA168, DIMM-168	4MX64 EDO DRAM MODULE, 60ns, DMA168, DIMM-168
Parts packaging code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
Contacts	168	168	168	168	168	168
Reach Compliance Code	unknow	unknown	unknown	unknown	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO
Maximum access time	60 ns	70 ns	60 ns	70 ns	60 ns	60 ns
Other features	RAS ONLY/CAS BEFORE RAS REFRESH	RAS ONLY/CAS BEFORE RAS REFRESH	RAS ONLY/CAS BEFORE RAS REFRESH	RAS ONLY/CAS BEFORE RAS REFRESH	RAS ONLY/CAS BEFORE RAS REFRESH	RAS ONLY/CAS BEFORE RAS REFRESH
Spare memory width	32	32	32	32	32	32
JESD-30 code	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168
memory density	268435456 bi	268435456 bit	268435456 bit	268435456 bit	268435456 bi	268435456 bi
Memory IC Type	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE
memory width	64	64	64	64	64	64
Number of functions	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1
Number of terminals	168	168	168	168	168	168
word count	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words
character code	4000000	4000000	4000000	4000000	4000000	4000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	4MX64	4MX64	4MX64	4MX64	4MX64	4MX64
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	2048	2048	2048	4096	4096	4096
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maker	FUJITSU	-	FUJITSU	FUJITSU	FUJITSU	FUJITSU

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