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IPA60R299CP

Description
MOSFETs;11A;600V;TO-220F
CategoryDiscrete semiconductor   
File Size202KB,2 Pages
ManufacturerInchange Semiconductor
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IPA60R299CP Overview

MOSFETs;11A;600V;TO-220F

INCHANGE Semiconductor
Isc N-Channel MOSFET Transistor
·FEATURES
·With
TO-220F package
·Low
input capacitance and gate charge
·Low
gate input resistance
·Reduced
switching and conduction losses
·100%
avalanche tested
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
IPA60R299CP
·APPLICATIONS
·Switching
applications
·ABSOLUTE
MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
DSS
V
GSS
I
D
I
DM
P
D
Tj
T
stg
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @Tc=25℃
(V
GS
at 10V)
Tc=100℃
Drain Current-Single Pulsed
Total Dissipation @T
C
=25℃
Max. Operating Junction Temperature
Storage Temperature
VALUE
600
±30
11
7
34
33
150
-55~150
UNIT
V
V
A
A
W
·THERMAL
CHARACTERISTICS
SYMBOL
Rth(ch-c)
Rth(ch-a)
PARAMETER
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
MAX
3.8
80
UNIT
℃/W
℃/W
isc website:www.iscsemi.cn
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