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IS25LQ080-JMA3

Description
Flash, 1MX8, PDSO16, 0.300 INCH, LEAD FREE, SOIC-16
Categorystorage    storage   
File Size1MB,53 Pages
ManufacturerIntegrated Silicon Solution ( ISSI )
Download Datasheet Parametric View All

IS25LQ080-JMA3 Overview

Flash, 1MX8, PDSO16, 0.300 INCH, LEAD FREE, SOIC-16

IS25LQ080-JMA3 Parametric

Parameter NameAttribute value
MakerIntegrated Silicon Solution ( ISSI )
package instructionSOP,
Reach Compliance Codecompli
Maximum clock frequency (fCLK)104 MHz
JESD-30 codeR-PDSO-G16
length10.3 mm
memory density8388608 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of terminals16
word count1048576 words
character code1000000
Operating modeSYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize1MX8
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialSERIAL
Programming voltage2.7 V
Maximum seat height2.65 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.3 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
width7.5 mm
IS25LQ080
8 Mbit Single Operating Voltage Serial Flash Memory With 104
MHz Dual- or 100MHz Quad-Output SPI Bus Interface
PRELIMINARY DATASHEET
FEATURES
• Single Power Supply Operation
- Low voltage range: 2.30 V - 3.60 V
• Memory Organization
- IS25LQ080: 1024K x 8 (8 Mbit)
• Cost Effective Sector/Block Architecture
- 8Mb : Uniform 4KByte sectors / sixteen uniform
64KByte blocks
• Serial Peripheral Interface (SPI) Compatible
- Supports single-, dual- or quad-output
- Supports SPI Modes 0 and 3
- Maximum 33 MHz clock rate for normal read
- Maximum 104 MHz clock rate for fast read
- Maximum 208MHz clock rate equivalent Dual SPI
- Maximum 400MHz clock rate equivalent Quad SPI
Byte Program Operation
- Typical 10 us/Byte
Page Program (up to 256 Bytes) Operation
- Maximum 0.7ms per page program
• Sector, Block or Chip Erase Operation
- Sector Erase (4KB)150ms (Typ)
- Block Erase (64KB)500ms (Typ)
- Chip Erase
2s
(8Mb)
• Low Power Consumption
- Max 12 mA active read current
- Max 20 mA program/erase current
-
Max 30 uA standby current
• Hardware Write Protection
- Protect and unprotect the device from write
operation by Write Protect (WP#) Pin
• Software Write Protection
-
The Block Protect (BP3, BP2, BP1, BP0) bits
allow partial or entire memory to be configured as
read-only
• High Product Endurance
- Guaranteed 100,000 program/erase cycles per
single sector
- Minimum 20 years data retention
• Industrial Standard Pin-out and Package
- 8-pin SOIC 300mil
- 8-pin SOIC 208mil
- 8-pin SOIC 150mil
- 8-pin VVSOP 150mil
- 8-pin W SON (5x6mm)
- Automotive Grades Available
- Lead-free (Pb-free) package
•Additional 256-byte Security information one-
time programmable (OTP) area
•Special protect function
-
Safe guard function (Appendix 1)
-
Sector unlock function (Appendix 2)
GENERAL DESCRIPTION
The IS25LQ080 is 8 Mbit Serial Peripheral Interface (SPI) Flash memories, providing single-, dual or quad-
output. The devices are designed to support a 33 MHz fclock rate in normal read mode, and 104 MHz in fast
read (Quad output is 100MHz), the fastest in the industry. The devices use a single low voltage power supply,
ranging from 2.3 Volt to 3.6 Volt, to perform read, erase and program operations. The devices can be
programmed in standard EPROM programmers.
The IS25LQ080 are accessed through a 4-wire SPI Interface consisting of Serial Data Input/Output (Sl), Serial
Data Output (SO), Serial Clock (SCK), and Chip Enable (CE#) pins. The devices support page program mode,
where 1 to 256 bytes data can be programmed into the memory in one program operation. These devices are
divided into uniform 4 KByte sectors or uniform 64 KByte blocks.
Integrated Silicon Solution, Inc.- www.issi.com
Rev. 0A
1/18/2013
1

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