IRKUF112-02GN datasheet, PDF - EEWORLD Datasheet

IRKUF112-02GN: DescriptionSilicon Controlled Rectifier, 250A I(T)RMS, 112000mA I(T), 200V V(DRM), 200V V(RRM), 2 Element, POWER, INT-A-PAK-7; CategoryAnalog mixed-signal IC Trigger device; File Size291KB，8 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRKUF112-02GN Overview

Silicon Controlled Rectifier, 250A I(T)RMS, 112000mA I(T), 200V V(DRM), 200V V(RRM), 2 Element, POWER, INT-A-PAK-7

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
package instruction	FLANGE MOUNT, R-PUFM-X7
Contacts	7
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	ISOLATED
Nominal circuit commutation break time	10 µs
Configuration	COMMON CATHODE, 2 ELEMENTS
Maximum DC gate trigger current	200 mA
Maximum DC gate trigger voltage	3 V
Quick connection description	2G-2GR
Description of screw terminals	2A-CK
Maximum holding current	600 mA
JESD-30 code	R-PUFM-X7
Maximum leakage current	30 mA
Humidity sensitivity level	1
On-state non-repetitive peak current	3200 A
Number of components	2
Number of terminals	7
Maximum on-state current	112000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	225
Certification status	Not Qualified
Maximum rms on-state current	250 A
Maximum repetitive peak off-state leakage current	30000 µA
Off-state repetitive peak voltage	200 V
Repeated peak reverse voltage	200 V
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR

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