GaAs Schottky Devices
TM
®
Low C
T
Flip Chip
MS8151 - P2613
Dimensions
Size: 26 x 13 mils
Thickness: 5 mils
Bond Pad Size: 5 x 8 mils
Features
●
●
●
●
Capacitance (45 fF Typ.)
Low Series Resistance (7
Typ.)
Cut-off Frequency > 500 GHz
Large Gold Bond Pads
Description
The MS8151-P2613 is a GaAs flip chip Schottky diode
designed for use as mixer and detector elements at
microwave and millimeter wave frequencies. Their
high cut-off
frequency
insures
good
performance
at frequencies
to
100
GHz.
Applications include, transceivers, digital radios
and automotive radar detectors.
These flip chip devices incorporate Microsemi’s
expertise in GaAs material processing, silicon
nitride protective coatings and high temperature
metalization. They have large, 5 x 8 mil, bond pads
for ease of insertion. The MS8150-P2613 is priced for
high volume commercial and industrial applications.
Specifications @ 25°C
(Per Junction)
●
●
●
●
V
F
(1 mA): 600–800 mV
R
S
(10 mA): 9
Max.
I
R
(3 V): 10
A
Max.
C
T
(0 V): 60 fF Max.
Maximum Ratings
Insertion Temperature
Incident Power
Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
250°C for 10 Seconds
+20 dBm @ 25°C
15 mA @ 25°C
3V
-55°C to +125°C
-65°C to +150°C
IMPORTANT:
For the most current data, consult our website:
www.MICROSEMI.com
Specifications are subject to change. Consult factory for the latest information
.
These devices are ESD sensitive and must be handled using ESD precautions.
1
The MS8151 is supplied with a RoHS
complaint Gold finish
.
Copyright
2008
Rev.: 2009-01-19
Microsemi
Microwave Products
Page 1
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
GaAs Schottky Devices
TM
®
Low C
T
Flip Chip
MS8151 - P2613
P2613
DIM
A
B
C
D
C
CATHODE
J
D
B
E
F
G
H
J
INCHES
MIN.
0.0255
0.0125
0.0046
0.0075
0.0170
0.0050
0.0045
0.0016
0.0023
MAX.
0.0265
0.0135
0.0056
0.0085
0.0180
0.0060
0.0055
0.0020
0.0027
MIN.
0.6480
0.3180
0.1170
0.1910
0.4320
0.1270
0.1140
0.0406
0.0584
MM
MAX.
0.6730
0.3430
0.1420
0.2160
0.4570
0.1520
0.1400
0.0508
0.0686
A
G
E
F
H
Spice Model Parameters (Per Junction)
I
S
A
3.2 x10
-13
R
S
7
N
1
TT
Sec
0
C
J0
pF
0.025
C
P
pF
0.02
M
0.50
EG
eV
1.42
V
J
V
0.85
BV
V
4
IBV
A
1 x 10
-5
Copyright
2008
Rev.: 2009-01-19
Microsemi
Microwave Products
Page 2
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
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