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8E2TL06-E

Description
8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC
Categorysemiconductor    Discrete semiconductor   
File Size175KB,10 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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8E2TL06-E Overview

8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC

VS-8E2TL06-E, VS-8E2TL06-M, VS-8E2TL06FP-E
Vishay Semiconductors
Ultralow V
F
Ultrafast Rectifier, 8 A FRED Pt
®
FEATURES
• Ultrafast recovery time, extremely low V
F
and
soft recovery
• 175 °C maximum operating junction temperature
• For PFC DCM operation
• True 2 pin package
• Low leakage current
• Fully isolated package (V
INS
= 2500 V
RMS
)
• Compliant to RoHS directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21 definition
• Designed and qualified for industrial level
2L TO-220AC
Base
cathode
2
2L TO-220 FULL-PAK
1
Cathode
3
Anode
1
Cathode
2
Anode
DESCRIPTION
State of the art, ultralow V
F
, soft-switching ultrafast rectifiers
optimized for Discontinuous (Critical) Mode (DCM) Power
Factor Correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimize the switching losses and
reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
VS-8E2TL06
VS-8E2TL06FP
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
(typ.)
T
J
max.
Diode variation
2L TO-220AC, 2L TO-220 FP
8A
600 V
1.07 V
60 ns
175 °C
Single die
APPLICATIONS
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PCs, TVs and
monitors, games units and DVD ac-to-dc power supplies.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
SYMBOL
V
RRM
FULL-PAK
I
F(AV)
I
FSM
I
FM
T
J
, T
Stg
T
C
= 156 °C
T
C
= 131 °C
T
J
= 25 °C
TEST CONDITIONS
VALUES
600
8
125
16
- 65 to 175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 8 A
I
F
= 8 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
1
0.85
0.04
10
6
8
MAX.
-
1.07
0.90
4
70
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Document Number: 93168
Revision: 19-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1

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