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SML50H19

Description
18.5A, 500V, 0.26ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size26KB,2 Pages
ManufacturerSEMELAB
Download Datasheet Parametric View All

SML50H19 Overview

18.5A, 500V, 0.26ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN

SML50H19 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSEMELAB
Parts packaging codeTO-258AA
package instructionFLANGE MOUNT, R-MSFM-P3
Contacts3
Reach Compliance Codecompli
Avalanche Energy Efficiency Rating (Eas)1210 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)18.5 A
Maximum drain-source on-resistance0.26 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-258AA
JESD-30 codeR-MSFM-P3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)74 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
SML50H19
TO–258 Package Outline.
Dimensions in mm (inches)
17.65 (0.695)
17.39 (0.685)
6.86 (0.270)
6.09 (0.240)
1.14 (0.707)
0.88 (0.035)
17.96 (0.707)
17.70 (0.697)
13.84 (0.545)
13.58 (0.535)
1 2 3
4.19 (0.165)
3.94 (0.155)
Dia.
21.21 (0.835)
20.70 (0.815)
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
V
DSS
500V
18.5A
I
D(cont)
R
DS(on)
0.260Ω
3.56 (0.140)
BSC
19.05 (0.750)
12.70 (0.500)
5.08 (0.200)
BSC
1.65 (0.065)
1.39 (0.055)
Typ.
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
• Faster Switching
• Lower Leakage
• TO–258 Hermetic Package
D
G
S
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
, T
STG
T
L
I
AR
E
AR
E
AS
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ T
case
= 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
2
500
18.5
74
±30
±40
200
1.6
–55 to 150
300
18.5
30
1210
V
A
A
V
W
W/°C
°C
A
mJ
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T
J
= 25°C, L = 7.07mH, R
G
= 25Ω, Peak I
L
= 18.5A
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
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