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SFF80N20PUBS

Description
Power Field-Effect Transistor, 55A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259, HERMETIC SEALED PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size183KB,3 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
Download Datasheet Parametric View All

SFF80N20PUBS Overview

Power Field-Effect Transistor, 55A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259, HERMETIC SEALED PACKAGE-3

SFF80N20PUBS Parametric

Parameter NameAttribute value
MakerSSDI
Parts packaging codeTO-259
package instructionFLANGE MOUNT, R-XSFM-P3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)1500 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)55 A
Maximum drain-source on-resistance0.03 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-259
JESD-30 codeR-XSFM-P3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF80N20 Series
80 AMP , 200 Volts, 25 mΩ
Avalanche Rated N-channel
MOSFET
Features:
Rugged poly-Si gate
Lowest ON-resistance in the industry
Avalanche rated
Hermetically Sealed, Isolated Package
Low Total Gate Charge
Fast Switching
TX, TXV, S-Level screening available
Improved (R
DS(ON)
Q
G
) figure of merit
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SFF80N20 ___ ___ ___
Screening
2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Lead Option
3/
Package
3/ 4/
M = TO-254
Z = TO-254Z
__ = Straight Leads
DB = Down Bend
UB = Up Bend
N = TO-258
P = TO-259
Maximum Ratings
5/
Drain - Source Voltage
Gate – Source Voltage
Max. Continuous Drain Current (package
limited)
Max. Instantaneous Drain Current (Tj limited)
Max. Avalanche current
Single and Repetitive Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
TO-254 (M)
TO-254Z (Z)
continuous
transient
Symbol
V
DSS
V
GS
I
D1
I
D2
I
D3
I
AR
E
AS
E
AR
P
D
T
OP
& T
STG
R
θJC
TO-258 (N)
Value
200
±20
±30
55
80
48
60
1500
50
150
-55 to +175
1.0
(typ.0.75)
Units
V
V
A
A
A
mJ
W
ºC
ºC/W
@ T
C
= 25ºC
@ T
C
= 25ºC
@ T
C
= 175ºC
@ L= 0.1 mH
@ L= 0.1 mH
@ T
C
= 25ºC
TO-259 (P)
NOTES:
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ For lead bending options / pinout configurations - contact factory.
4/ Maximum current limited by package configuration
5/ Unless otherwise specified, all electrical characteristics @25
o
C.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00129H
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