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8N80L-TF3-T

Description
Power Field-Effect Transistor, 8A I(D), 800V, 1.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size254KB,7 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
Download Datasheet Parametric Compare View All

8N80L-TF3-T Overview

Power Field-Effect Transistor, 8A I(D), 800V, 1.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

8N80L-TF3-T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
package instructionTO-220F, 3 PIN
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)850 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage800 V
Maximum drain current (Abs) (ID)8 A
Maximum drain current (ID)8 A
Maximum drain-source on-resistance1.45 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)59 W
Maximum pulsed drain current (IDM)32 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
UNISONIC TECHNOLOGIES CO., LTD
8N80
8A, 800V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
8N80
is an N-channel mode power MOSFET, it uses
UTC’s advanced technology to provide costumers planar stripe and
DMOS technology. This technology allows a minimum on-state
resistance, superior switching performance. It also can withstand high
energy pulse in the avalanche and commutation mode.
The UTC
8N80
is generally applied in high efficiency switch mode
power supplies.
Power MOSFET
FEATURES
* Typically 35 nC Low Gate Charge
* R
DS(ON)
= 1.45Ω @V
GS
= 10V
* Typically 13 pF Low C
RSS
* Improved dv/dt Capability
* Fast Switching Speed
* 100% Avalanche Tested
* RoHS–Compliant Product
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
8N80L-TA3-T
8N80G-TA3-T
8N80L-TF3-T
8N80G-TF3-T
8N80L-TF1-T
8N80G-TF1-T
8N80L-TF2-T
8N80G-TF2-T
Note: Pin Assignment: G: GND, D: Drain, S: Source
Package
TO-220
TO-220F
TO-220F1
TO-220F2
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-471.I

8N80L-TF3-T Related Products

8N80L-TF3-T 8N80G-TF2-T 8N80G-TF3-T 8N80L-TF2-T
Description Power Field-Effect Transistor, 8A I(D), 800V, 1.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN Power Field-Effect Transistor, 8A I(D), 800V, 1.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F2, 3 PIN Power Field-Effect Transistor, 8A I(D), 800V, 1.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN Power Field-Effect Transistor, 8A I(D), 800V, 1.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F2, 3 PIN
Is it Rohs certified? conform to conform to conform to conform to
Maker UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
package instruction TO-220F, 3 PIN FLANGE MOUNT, R-PSFM-T3 TO-220F, 3 PIN FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 850 mJ 850 mJ 850 mJ 850 mJ
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 800 V 800 V 800 V 800 V
Maximum drain current (Abs) (ID) 8 A 8 A 8 A 8 A
Maximum drain current (ID) 8 A 8 A 8 A 8 A
Maximum drain-source on-resistance 1.45 Ω 1.45 Ω 1.45 Ω 1.45 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 59 W 62 W 59 W 62 W
Maximum pulsed drain current (IDM) 32 A 32 A 32 A 32 A
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
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