Freescale Semiconductor
Technical Data
Document Number: AFT21S230S_232S
Rev. 1, 11/2012
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These 50 watt RF power LDMOS transistors are designed for cellular base
station applications covering the frequency range of 2110 to 2170 MHz.
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts,
I
DQ
= 1500 mA, P
out
= 50 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
2110 MHz
2140 MHz
2170 MHz
G
ps
(dB)
16.7
17.0
17.2
D
(%)
30.5
31.0
31.8
Output PAR
(dB)
7.2
7.1
7.0
ACPR
(dBc)
--35.7
--35.4
--34.8
IRL
(dB)
--19
--20
--15
AFT21S230SR3
AFT21S232SR3
2110-
-2170 MHz, 50 W AVG., 28 V
Features
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
NI--780S--6: R3 Suffix = 250 Units, 44 mm Tape Width, 13 inch Reel.
NI--780S--2: R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel options, see p. 18.
N.C. 1
6 VBW
RF
in
/V
GS
2
5 RF
out
/V
DS
N.C. 3
(Top View)
4 VBW
NI-
-780S-
-6
AFT21S230S
Figure 1. Pin Connections
RF
in
/V
GS
2
1 RF
out
/V
DS
(Top View)
NI-
-780S-
-2
AFT21S232S
Figure 2. Pin Connections
Freescale Semiconductor, Inc., 2012. All rights reserved.
AFT21S230SR3 AFT21S232SR3
1
RF Device Data
Freescale Semiconductor, Inc.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
(1,2)
CW Operation @ T
C
= 25C
Derate above 25C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
CW
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
--40 to +150
--40 to +225
163
0.79
Unit
Vdc
Vdc
Vdc
C
C
C
W
W/C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80C, 50 W CW, 28 Vdc, I
DQ
= 1500 mA, 2110 MHz
Case Temperature 86C, 140 W CW
(4)
, 28 Vdc, I
DQ
= 1500 mA, 2110 MHz
Symbol
R
JC
Value
(2,3)
0.43
0.38
Unit
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2
B
IV
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 291
Adc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 1500 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 3.7 Adc)
V
GS(th)
V
GS(Q)
V
DS(on)
1.5
2.2
0.1
2.0
2.7
0.2
2.5
3.2
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
Adc
Adc
Adc
Symbol
Min
Typ
Max
Unit
Functional Tests
(5)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1500 mA, P
out
= 50 W Avg., f = 2110 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
D
PAR
ACPR
IRL
16.0
29.0
6.7
—
—
16.7
30.5
7.2
--35.7
--19
19.0
—
—
--34.0
--10
dB
%
dB
dBc
dB
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
5. Part internally matched both on input and output.
(continued)
AFT21S230SR3 AFT21S232SR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
VSWR 10:1 at 32 Vdc, 269 W CW Output Power
(3 dB Input Overdrive from 182 W CW Rated Power)
Symbol
Min
Typ
Max
Unit
Load Mismatch
(In Freescale Test Fixture, 50 ohm system) I
DQ
= 1500 mA, f = 2140 MHz
No Device Degradation
Typical Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1500 mA, 2110--2170 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW
AM/PM
(Maximum value measured at the P3dB compression point across
the 2110--2170 MHz bandwidth)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
AFT21S230S
AFT21S232S
Gain Flatness in 60 MHz Bandwidth @ P
out
= 50 W Avg.
Gain Variation over Temperature
(--30C to +85C)
Output Power Variation over Temperature
(--30C to +85C)
(1)
G
F
G
P1dB
—
—
—
P1dB
—
—
182
(1)
--19.3
—
—
W
VBW
res
—
95
60
0.5
0.016
0.007
—
MHz
—
—
—
dB
dB/C
dB/C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
AFT21S230SR3 AFT21S232SR3
RF Device Data
Freescale Semiconductor, Inc.
3
C1
C22
C4
C8
C18
C13*
C19
C12*
R1
C10*
CUT OUT AREA
C5
C2
C11*
C16*
R2
C17
C20
C21
C15*
C6
C7
C14*
C9
C23
C3
AFT21S232S/AFT21S230S
Rev. 0
*C10, C11, C12, C13, C14, C15 and C16 are mounted vertically.
Figure 3. AFT21S230SR3(232SR3) Test Circuit Component Layout
Table 5. AFT21S230SR3(232SR3) Test Circuit Component Designations and Values
Part
C1
C2, C3, C4, C5, C6, C7, C22, C23
C8, C9, C10, C11, C12, C13, C14, C15
C16
C17
C18, C19, C20, C21
R1, R2
PCB
Description
470
F,
63 V Electrolytic Capacitor
10
F,
100 V Chip Capacitors
6.8 pF Chip Capacitors
0.6 pF Chip Capacitor
0.3 pF Chip Capacitor
1
F,
50 V Chip Capacitors
8.2
,
1/4 W Chip Resistors
0.020,
r
= 3.5
Part Number
B41694A5477Q7
C5750X7S2A106M
ATC100B6R8BT500XT
ATC100B0R6BT500XT
ATC100B0R3BT500XT
CDR34BX104AKWS
RC1206FR--108R2L
RO4350B
Manufacturer
EPCOS
TDK
ATC
ATC
ATC
AVX
Yageo
Rogers
AFT21S230SR3 AFT21S232SR3
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
V = 28 Vdc, P
out
= 50 W (Avg.), I
DQ
= 1500 mA
19
DD
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
18.5
Input Signal PAR = 9.9 dB @ 0.01%
18
Probability on CCDF
17.5
17
16.5
16
15.5
15
14.5
2060
2080
2100
2120
2140
IRL
2160
2180
2200
f, FREQUENCY (MHz)
D
G
ps
PARC
ACPR
D
, DRAIN
EFFICIENCY (%)
19.5
34
33
32
31
30
--32
--33
ACPR (dBc)
--34
--35
--36
--37
2220
G
ps
, POWER GAIN (dB)
--4
--8
--12
--16
--20
--24
IRL, INPUT RETURN LOSS (dB)
--2
--2.4
--2.8
--3.2
--3.6
--4
PARC (dB)
100
Figure 4. Single-
-Carrier Output Peak- -Average Ratio Compression
-to-
(PARC) Broadband Performance @ P
out
= 50 Watts Avg.
--10
--10
IMD, INTERMODULATION DISTORTION (dBc)
--30
--40
--50
--60
IM7--L
IM3--U
IM3--L
IM5--L
IM5--U
IM7--U
IMD, INTERMODULATION DISTORTION (dBc)
V
DD
= 28 Vdc, P
out
= 172 W (PEP), I
DQ
= 1500 mA
Two--Tone Measurements, (f1 + f2)/2 = Center
--20
Frequency of 2140 MHz
V
DD
= 28 Vdc, P
out
= 172 W (PEP), I
DQ
= 1500 mA
Two--Tone Measurements, (f1 + f2)/2 = Center
--20
Frequency of 2140 MHz
IM3--U
--30
--40
--50
--60
IM5--L
IM5--U
IM7--U
IM7--L
IM3--L
1
10
TWO--TONE SPACING (MHz)
100
200
1
10
TWO--TONE SPACING (MHz)
200
Figure 5a. Intermodulation Distortion Products
versus Two-
-Tone Spacing — AFT21S230S
18
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
17.5
G
ps
, POWER GAIN (dB)
17
16.5
16
15.5
15
1
0
--1
--2
--3
--1 dB = 28 W
--2 dB = 38 W
Figure 5b. Intermodulation Distortion Products
versus Two-
-Tone Spacing — AFT21S232S
40
D
ACPR
35
30
25
20
15
10
70
85
--20
--25
--30
--35
--40
--45
--50
ACPR (dBc)
--3 dB = 49 W
PARC
G
ps
--4
--5
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
10
25
40
55
P
out
, OUTPUT POWER (WATTS)
Figure 6. Output Peak- -Average Ratio
-to-
Compression (PARC) versus Output Power
AFT21S230SR3 AFT21S232SR3
RF Device Data
Freescale Semiconductor, Inc.
5
D
DRAIN EFFICIENCY (%)
V
DD
= 28 Vdc, I
DQ
= 1500 mA, f = 2140 MHz
Single--Carrier W--CDMA 3.84 MHz
Channel Bandwidth
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