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AFT21S230S_232S

Description
CAPACITOR, CERAMIC, MULTILAYER, 500 V, 0.0000003 uF, SURFACE MOUNT, 1111
CategoryPassive components   
File Size430KB,15 Pages
ManufacturerFREESCALE (NXP)
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AFT21S230S_232S Overview

CAPACITOR, CERAMIC, MULTILAYER, 500 V, 0.0000003 uF, SURFACE MOUNT, 1111

AFT21S230S_232S Parametric

Parameter NameAttribute value
negative deviation33.33 %
Minimum operating temperature-55 Cel
Maximum operating temperature175 Cel
positive deviation33.33 %
Rated DC voltage urdc500 V
Processing package descriptionCHIP, ROHS COMPLIANT
each_compliYes
EU RoHS regulationsYes
stateActive
Capacitor typeCERAMIC CAPACITOR
capacitance3.00E-7 µF
dielectric materialsCERAMIC
jesd_609_codee3
Manufacturer SeriesATC100B
Installation featuresSURFACE MOUNT
multi-layer1
packaging shapeRECTANGULAR PACKAGE
Package SizeSMT
cking_methodTR
eference_standardMIL-PRF-55681
series100B(CHIP)
size code1111
Temperature characteristic codeBG
Temperature Coefficient90+/-20ppm/Cel
terminal coatingTIN OVER NICKEL
Terminal shapeWRAPAROUND
heigh2.59 mm
length2.79 mm
width2.79 mm
dditional_featureSTANDARDS: MIL-PRF-123, MIL-PRF-55681
Freescale Semiconductor
Technical Data
Document Number: AFT21S230S_232S
Rev. 1, 11/2012
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These 50 watt RF power LDMOS transistors are designed for cellular base
station applications covering the frequency range of 2110 to 2170 MHz.
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts,
I
DQ
= 1500 mA, P
out
= 50 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
2110 MHz
2140 MHz
2170 MHz
G
ps
(dB)
16.7
17.0
17.2
D
(%)
30.5
31.0
31.8
Output PAR
(dB)
7.2
7.1
7.0
ACPR
(dBc)
--35.7
--35.4
--34.8
IRL
(dB)
--19
--20
--15
AFT21S230SR3
AFT21S232SR3
2110-
-2170 MHz, 50 W AVG., 28 V
Features
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
NI--780S--6: R3 Suffix = 250 Units, 44 mm Tape Width, 13 inch Reel.
NI--780S--2: R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel options, see p. 18.
N.C. 1
6 VBW
RF
in
/V
GS
2
5 RF
out
/V
DS
N.C. 3
(Top View)
4 VBW
NI-
-780S-
-6
AFT21S230S
Figure 1. Pin Connections
RF
in
/V
GS
2
1 RF
out
/V
DS
(Top View)
NI-
-780S-
-2
AFT21S232S
Figure 2. Pin Connections
Freescale Semiconductor, Inc., 2012. All rights reserved.
AFT21S230SR3 AFT21S232SR3
1
RF Device Data
Freescale Semiconductor, Inc.

AFT21S230S_232S Related Products

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Description CAPACITOR, CERAMIC, MULTILAYER, 500 V, 0.0000003 uF, SURFACE MOUNT, 1111 CAPACITOR, CERAMIC, MULTILAYER, 500 V, 0.0000003 uF, SURFACE MOUNT, 1111 CAPACITOR, CERAMIC, MULTILAYER, 500 V, 0.0000003 uF, SURFACE MOUNT, 1111 CAPACITOR, CERAMIC, MULTILAYER, 500 V, 0.0000003 uF, SURFACE MOUNT, 1111 CAPACITOR, CERAMIC, MULTILAYER, 500 V, 0.0000003 uF, SURFACE MOUNT, 1111 CAPACITOR, CERAMIC, MULTILAYER, 500 V, 0.0000003 uF, SURFACE MOUNT, 1111 CAPACITOR, CERAMIC, MULTILAYER, 500 V, 0.0000003 uF, SURFACE MOUNT, 1111 CAPACITOR, CERAMIC, MULTILAYER, 500 V, 0.0000003 uF, SURFACE MOUNT, 1111
negative deviation 33.33 % 33.33 % 33.33 % 33.33 % 33.33 % 33.33 % 33.33 % 33.33 %
Minimum operating temperature -55 Cel -55 Cel -55 Cel -55 Cel -55 Cel -55 Cel -55 Cel -55 Cel
Maximum operating temperature 175 Cel 175 Cel 175 Cel 175 Cel 175 Cel 175 Cel 175 Cel 175 Cel
positive deviation 33.33 % 33.33 % 33.33 % 33.33 % 33.33 % 33.33 % 33.33 % 33.33 %
Rated DC voltage urdc 500 V 500 V 500 V 500 V 500 V 500 V 500 V 500 V
Processing package description CHIP, ROHS COMPLIANT CHIP, ROHS COMPLIANT CHIP, ROHS COMPLIANT CHIP, ROHS COMPLIANT CHIP, ROHS COMPLIANT CHIP, ROHS COMPLIANT CHIP, ROHS COMPLIANT CHIP, ROHS COMPLIANT
each_compli Yes Yes Yes Yes Yes Yes Yes Yes
EU RoHS regulations Yes Yes Yes Yes Yes Yes Yes Yes
state Active Active Active Active Active Active Active Active
Capacitor type CERAMIC CAPACITOR CERAMIC CAPACITOR CERAMIC CAPACITOR CERAMIC CAPACITOR CERAMIC CAPACITOR CERAMIC CAPACITOR CERAMIC CAPACITOR CERAMIC CAPACITOR
capacitance 3.00E-7 µF 3.00E-7 µF 3.00E-7 µF 3.00E-7 µF 3.00E-7 µF 3.00E-7 µF 3.00E-7 µF 3.00E-7 µF
dielectric materials CERAMIC CERAMIC CERAMIC CERAMIC CERAMIC CERAMIC CERAMIC CERAMIC
jesd_609_code e3 e3 e3 e3 e3 e3 e3 e3
Manufacturer Series ATC100B ATC100B ATC100B ATC100B ATC100B ATC100B ATC100B ATC100B
Installation features SURFACE MOUNT SURFACE MOUNT SURFACE MOUNT SURFACE MOUNT SURFACE MOUNT SURFACE MOUNT SURFACE MOUNT SURFACE MOUNT
multi-layer 1 1 1 1 1 1 1 1
packaging shape RECTANGULAR PACKAGE RECTANGULAR PACKAGE RECTANGULAR PACKAGE RECTANGULAR PACKAGE RECTANGULAR PACKAGE RECTANGULAR PACKAGE RECTANGULAR PACKAGE RECTANGULAR PACKAGE
Package Size SMT SMT SMT SMT SMT SMT SMT SMT
cking_method TR TR TR TR TR TR TR TR
eference_standard MIL-PRF-55681 MIL-PRF-55681 MIL-PRF-55681 MIL-PRF-55681 MIL-PRF-55681 MIL-PRF-55681 MIL-PRF-55681 MIL-PRF-55681
series 100B(CHIP) 100B(CHIP) 100B(CHIP) 100B(CHIP) 100B(CHIP) 100B(CHIP) 100B(CHIP) 100B(CHIP)
size code 1111 1111 1111 1111 1111 1111 1111 1111
Temperature characteristic code BG BG BG BG BG BG BG BG
Temperature Coefficient 90+/-20ppm/Cel 90+/-20ppm/Cel 90+/-20ppm/Cel 90+/-20ppm/Cel 90+/-20ppm/Cel 90+/-20ppm/Cel 90+/-20ppm/Cel 90+/-20ppm/Cel
terminal coating TIN OVER NICKEL TIN OVER NICKEL TIN OVER NICKEL TIN OVER NICKEL TIN OVER NICKEL TIN OVER NICKEL TIN OVER NICKEL TIN OVER NICKEL
Terminal shape WRAPAROUND WRAPAROUND WRAPAROUND WRAPAROUND WRAPAROUND WRAPAROUND WRAPAROUND WRAPAROUND
heigh 2.59 mm 2.59 mm 2.59 mm 2.59 mm 2.59 mm 2.59 mm 2.59 mm 2.59 mm
length 2.79 mm 2.79 mm 2.79 mm 2.79 mm 2.79 mm 2.79 mm 2.79 mm 2.79 mm
width 2.79 mm 2.79 mm 2.79 mm 2.79 mm 2.79 mm 2.79 mm 2.79 mm 2.79 mm
dditional_feature STANDARDS: MIL-PRF-123, MIL-PRF-55681 STANDARDS: MIL-PRF-123, MIL-PRF-55681 STANDARDS: MIL-PRF-123, MIL-PRF-55681 STANDARDS: MIL-PRF-123, MIL-PRF-55681 STANDARDS: MIL-PRF-123, MIL-PRF-55681 STANDARDS: MIL-PRF-123, MIL-PRF-55681 STANDARDS: MIL-PRF-123, MIL-PRF-55681 STANDARDS: MIL-PRF-123, MIL-PRF-55681
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