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ST173S10PEP2

Description
Silicon Controlled Rectifier, 175000mA I(T), 1000V V(DRM)
CategoryAnalog mixed-signal IC    Trigger device   
File Size156KB,10 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

ST173S10PEP2 Overview

Silicon Controlled Rectifier, 175000mA I(T), 1000V V(DRM)

ST173S10PEP2 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
package instruction,
Reach Compliance Codeunknow
Critical rise rate of minimum off-state voltage500 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
Maximum holding current600 mA
Maximum leakage current40 mA
On-state non-repetitive peak current4900 A
Maximum on-state voltage2.07 V
Maximum on-state current175000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Off-state repetitive peak voltage1000 V
Trigger device typeSCR
Bulletin I25181 rev. C 12/96
ST173S SERIES
INVERTER GRADE THYRISTORS
Stud Version
Features
All diffused design
Center amplifying gate
Guaranteed high dv/dt
Guaranteed high di/dt
High surge current capability
Low thermal impedance
High speed performance
175A
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
range
T
J
ST173S
175
85
275
4680
4900
110
100
1000 to 1200
15 to 25
- 40 to 125
Units
A
°C
A
A
A
KA
2
s
KA
2
s
V
µs
°C
case style
TO-209AB (TO-93)
Document Number: 93667
www.vishay.com
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