BZM55-Series
Vishay Semiconductors
Small Signal Zener Diodes
Features
• Saving space
• Hermetic sealed parts
• Electrical data identical with the devices
BZT55..Series/TZM..Series
• Fits onto SOD-323/SOD-110 footprints
• Very sharp reverse characteristic
• Low reverse current level
• Very high stability
• Low noise
• Available with tighter tolerances
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
9612315
Mechanical Data
Case:
MicroMELF
Weight:
approx. 12 mg
Packaging codes/options:
TR/2.5 k per 7" reel, 12.5 k/box
TR3/10 k per 13" reel, 10 k/box
Applications
• Voltage stabilization
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Power dissipation
Z-current
Junction temperature
Storage temperature range
Test condition
R
thJA
≤
300 K/W
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
- 65 to + 175
Unit
mW
mA
°C
°C
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction to ambient air
Junction tie point
Test condition
Mounted on epoxy-glass hard
tissue, fig. 1
35 µm copper clad, 0.9 mm
2
copper area per electrode
Symbol
R
thJA
R
thJL
Value
500
300
Unit
K/W
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Test condition
I
F
= 200 mA
Symbol
V
F
Min.
Typ.
Max.
1.5
Unit
V
Document Number 85597
Rev. 2.0, 26-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
BZM55-Series
Vishay Semiconductors
Electrical Characteristics
BZM55C..
Zener voltage
range
Part number
1)
Dynamic
resistance
r
zjT
at
I
ZT
,
f = 1kHz
Ω
r
zjK
at
I
ZK
,
f = 1kHz
Test
current
I
ZT
mA
Temperature
coefficient
TK
VZ
%/K
min.
max.
- 0.06
- 0.06
- 0.05
- 0.05
- 0.05
- 0.05
- 0.03
0.02
0.02
0.05
0.06
0.07
0.07
0.08
0.09
0.1
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
- 0.09
- 0.09
- 0.08
- 0.08
-0.08
- 0.08
- 0.06
- 0.05
- 0.02
- 0.05
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
Test
current
I
ZK
mA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Reverse leakage current
I
R
I
R
at T
amb
at T
amb
= 25 °C = 150 °C
µA
< 50
< 10
<4
<2
<2
<2
<1
< 0.5
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 100
< 50
< 40
< 40
< 40
< 40
< 20
< 10
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<5
<5
<5
< 10
< 10
< 10
< 10
< 10
V
Z
at I
ZT
V
min.
max.
2.56
2.9
3.2
3.5
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
0.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
at V
R
V
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
BZM55C2V4
BZM55C2V7
BZM55C3V0
BZM55C3V3
BZM55C3V6
BZM55C3V9
BZM55C4V3
BZM55C4V7
BZM55C5V1
BZM55C5V6
BZM55C6V2
BZM55C6V8
BZM55C7V5
BZM55C8V2
BZM55C9V1 *
BZM55C10 *
BZM55C11 *
BZM55C12 *
BZM55C13 *
BZM55C15 *
BZM55C16 *
BZM55C18 *
BZM55C20 *
BZM55C22 *
BZM55C24 *
BZM55C27 *
BZM55C30 *
BZM55C33 *
BZM55C36 *
BZM55C39 *
BZM55C43 *
BZM55C47 *
BZM55C51 *
BZM55C56 *
BZM55C62 *
BZM55C68 *
BZM55C75 *
2.28
2.5
2.8
3.1
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
< 85
< 85
< 90
< 90
< 90
< 90
< 90
< 80
< 60
< 40
< 10
<8
<7
<7
< 10
< 15
< 20
< 20
< 26
< 30
< 40
< 50
< 55
< 55
< 80
< 80
< 80
< 80
< 80
< 90
< 90
110
125
135
150
200
250
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
< 700
< 700
< 1000
< 1000
< 1000
< 1500
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
Notes:
1)
t
p
≤
10 ms, T/t
p
> 1000
*)
Additionnal measurement of voltage group 9V1 to 75 % at 95 % V
zmin.
≤
35 nA at T
j
25 °C
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number 85597
Rev. 2.0, 26-Aug-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
BZM55-Series
Vishay Semiconductors
Electrical Characteristics
BZM55B..
Zener voltage
range
Part number
1)
Dynamic
resistance
r
zjT
at
I
ZT
,
f = 1kHz
Ω
r
zjK
at
I
ZK
,
f = 1kHz
Test
current
I
ZT
mA
Temperature
coefficient
TK
VZ
%/K
min.
max.
- 0.06
- 0.06
- 0.05
- 0.05
- 0.05
- 0.05
- 0.03
0.02
0.02
0.05
0.06
0.07
0.07
0.08
0.09
0.1
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
- 0.09
- 0.09
- 0.08
- 0.08
- 0.08
- 0.08
- 0.06
- 0.05
- 0.02
- 0.05
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
Test
current
I
ZK
mA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Reverse leakage current
I
R
at
T
amb
=
25 °C
µA
< 50
< 10
<4
<2
<2
<2
<1
< 0.5
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 100
< 50
< 40
< 40
< 40
< 40
< 20
< 10
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<5
<5
<5
< 10
< 10
< 10
< 10
< 10
I
R
at
T
amb
=
150 °C
V
Z
at I
ZT
V
min.
max.
2.45
2.76
3.06
3.36
3.68
3.98
4.38
4.80
5.20
5.72
6.32
6.94
7.65
8.36
9.28
10.20
11.22
12.24
13.26
15.30
16.30
18.36
20.40
22.45
24.5
27.6
30.6
33.6
36.7
39.8
43.9
47.9
52.0
57.1
63.2
69.4
76.5
at V
R
V
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
BZM55B2V4
BZM55B2V7
BZM55B3V0
BZM55B3V3
BZM55B3V6
BZM55B3V9
BZM55B4V3
BZM55B4V7
BZM55B5V1
BZM55B5V6
BZM55B6V2
BZM55B6V8
BZM55B7V5
BZM55B8V2
BZM55B9V1 *
BZM55B10 *
BZM55B11 *
BZM55B12 *
BZM55B13 *
BZM55B15 *
BZM55B16 *
BZM55B18 *
BZM55B20 *
BZM55B22 *
BZM55B24 *
BZM55B27 *
BZM55B30 *
BZM55B33 *
BZM55B36 *
BZM55B39 *
BZM55B43 *
BZM55B47 *
BZM55B51 *
BZM55B56 *
BZM55B62 *
BZM55B68 *
BZM55B75 *
2.35
2.64
2.94
3.24
3.52
3.82
4.22
4.6
5
5.48
6.08
6.66
7.35
8.04
8.92
9.8
10.78
11.76
12.74
14.7
15.7
17.64
19.6
21.55
23.5
26.4
29.4
32.4
35.3
38.2
42.1
46.1
50
54.9
60.8
66.6
73.5
< 85
< 85
< 90
< 90
< 90
< 90
< 90
< 80
< 60
< 40
< 10
<8
<7
<7
< 10
< 15
< 20
< 20
< 26
< 30
< 40
< 50
< 55
< 55
< 80
< 80
< 80
< 80
< 80
< 90
< 90
< 110
< 125
< 135
< 150
< 200
< 250
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
< 700
< 700
< 1000
< 1000
< 1000
< 1500
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
Notes:
1)
t
p
≤
10 ms, T/t
p
> 1000
*)
Additionnal measurement of voltage group 9V1 to 75 % at 95 % V
zmin.
≤
35 nA at T
j
25 °C
Document Number 85597
Rev. 2.0, 26-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
BZM55-Series
Vishay Semiconductors
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
P
tot
- Total Power Dissipation (mW)
600
500
400
300
200
100
0
0
95 9602
200
C
D
- Diode Capacitance (pF)
150
V
R
= 2
V
T
j
= 25 °C
100
50
0
80
120
160
40
T
amb
- Ambient Temperature (°C)
200
95 9601
0
5
10
15
20
25
V
Z
- Z-Voltage (V)
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 4. Diode Capacitance vs. Z-Voltage
1000
1.3
V
Ztn
- Relative Voltage Change
V
Ztn
= V
Zt
/V
Z
(25 °C)
1.2
TK
VZ
= 10 x 10
-4
/K
8 x 10
-4
/K
6 x 10
-4
/K
4 x 10
-4
/K
2 x 10
-4
/K
V
Z
-
Voltage
Change (mV)
T
j
= 25 °C
100
1.1
I
Z
= 5 mA
10
1.0
0.9
0.8
0
- 2 x 10
-4
/K
- 4 x 10
-4
/K
1
0
95 9598
5
10
15
20
25
95 9599
- 60
0
60
120
180
240
V
Z
- Z-Voltage (V)
T
j
- Junction Temperature (°C)
Figure 2. Typical Change of Working Voltage under Operating
Conditions at T
amb
=25°C
15
Figure 5. Typical Change of Working Voltage vs.
Junction Temperature
100
TK
VZ
- Temperature Coefficient
of
V
Z
(10
-4
/K)
I
F
- Forward Current (mA)
10
10
T
j
= 25 °C
1
5
I
Z
= 5 mA
0
0.1
0.01
-5
0.001
0
95 9600
10
20
30
40
50
95 9605
0
0.2
0.4
0.6
0.8
1.0
V
Z
- Z-Voltage (V)
V
F
- Forward
Voltage
(V)
Figure 3. Temperature Coefficient of Vz vs. Z-Voltage
Figure 6. Forward Current vs. Forward Voltage
www.vishay.com
4
For technical questions within your region, please contact one of the following: Document Number 85597
Rev. 2.0, 26-Aug-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
BZM55-Series
Vishay Semiconductors
100
0.71
0.152
1.3
1.27
80
I
Z
- Z-Current (mA)
60
25
0.355
40
10
20
2.5
0
95 9604
0
4
6
8
12
20
95 10329
24
V
Z
- Z-Voltage (V)
Figure 7. Z-Current vs. Z-Voltage
Figure 10. Board for R
thJA
Definition (in mm)
50
P
tot
= 500 mW
T
amb
= 25 °C
Reflow Soldering
40
I
Z
- Z-Current (mA)
30
1.2
20
10
0.8
15
20
25
30
35
16773
0.8
2.4
0.8
0
95 9607
V
Z
- Z-Voltage (V)
Figure 8. Z-Current vs. Z-Voltage
Figure 11. Recommended Foot Pads (in mm)
1000
r
Z
- Differential Z-Resistance (Ω)
Wave
Soldering
I
Z
= 1 mA
100
5 mA
10 10 mA
1.4
0.9
1
0
5
10
15
T
j
= 25 °C
20
25
16774
1.0
2.8
0.9
95 9606
V
Z
- Z-Voltage (V)
Figure 9. Differential Z-Resistance vs. Z-Voltage
Figure 12. Recommended Foot Pads (in mm)
Document Number 85597
Rev. 2.0, 26-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
9.9
P
tot
= 500 mW
T
amb
= 25 °C
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