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BZT55C11

Description
11 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Categorysemiconductor    Discrete semiconductor   
File Size120KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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BZT55C11 Overview

11 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

BZT55-Series
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• Very sharp reverse characteristic
• Low reverse current level
• Very high stability
• Low noise
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
2.4 to 75
2.5 to 5
Pulse current
Single
UNIT
V
mA
• Voltage stabilization
ORDERING INFORMATION
DEVICE NAME
BZT55-series
BZT55-series
ORDERING CODE
BZT55-series-GS18
BZT55-series-GS08
TAPED UNITS PER REEL
10 000 per 13" reel
2500 per 7" reel
MINIMUM ORDER QUANTITY
10 000/box
12 500/box
PACKAGE
PACKAGE NAME
QuadroMELF SOD-80
WEIGHT
34 mg
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Zener current
Junction to ambient air
Junction temperature
Storage temperature range
Forward voltage (max.)
I
F
= 200 mA
On PC board
50 mm x 50 mm x 1.6 mm
TEST CONDITION
R
thJA
300 K/W
SYMBOL
P
tot
I
Z
R
thJA
T
j
T
stg
V
F
VALUE
500
P
V
/V
Z
500
175
- 65 to + 175
1.5
UNIT
mW
mA
K/W
°C
°C
V
Rev. 1.7, 22-Nov-11
Document Number: 85637
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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