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RN2404

Description
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
CategoryDiscrete semiconductor    The transistor   
File Size264KB,8 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

RN2404 Overview

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN2404 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-based maximum capacity6 pF
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)80
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.4 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
VCEsat-Max0.3 V
Base Number Matches1
RN2401,RN2402,RN2403,RN2404,RN2405,RN2406
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2401,RN2402,RN2403
RN2404,RN2405,RN2406
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l
With built-in bias resistors
l
Simplify circuit design
l
Reduce a quantity of parts and manufacturing process
l
Complementary to RN1401~1406
Unit: mm
Equivalent Circuit
Bias Resistor Values
Type No.
RN2401
RN2402
RN2403
RN2404
RN2405
RN2406
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
Maximum Ratings
(Ta = 25°C)
°
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2401~2406
RN2401~2406
RN2401~2404
RN2405, 2406
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
−50
−50
−10
−5
−100
200
150
−55~150
JEDEC
EIAJ
TOSHIBA
Weight: 0.012g
TO-236MOD
SC-59
2-2F1A
Unit
V
V
V
V
mA
mW
°C
°C
1
2001-06-07

RN2404 Related Products

RN2404 RN2401 RN2402 RN2403 RN2405 RN2406
Description Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
Parts packaging code SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3 3 3 3
Reach Compliance Code unknow unknow unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 21.36 BUILT-IN BIAS RESISTOR RATIO IS 10
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-based maximum capacity 6 pF 6 pF 6 pF 6 pF 6 pF 6 pF
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 80 30 50 70 80 80
JEDEC-95 code TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 0.4 W 0.4 W 0.4 W 0.4 W 0.4 W 0.4 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz
VCEsat-Max 0.3 V 0.3 V 0.3 V 0.3 V 0.3 V 0.3 V
Is it Rohs certified? conform to - conform to conform to conform to conform to
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 - 1 1 - 1
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