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B80C2300-1500AB

Description
1.8 A, 250 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size148KB,2 Pages
ManufacturerDIOTEC
Websitehttp://www.diotec.com/
Download Datasheet Parametric View All

B80C2300-1500AB Overview

1.8 A, 250 V, SILICON, BRIDGE RECTIFIER DIODE

B80C2300-1500AB Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Maximum average input current1.8 A
Processing package description19 × 3.50 MM, 10 MM HEIGHT, ROHS COMPLIANT, PLASTIC PACKAGE-4
stateACTIVE
packaging shapeRectangle
Package SizeIN-line
Terminal formTHROUGH-hole
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureBridge, 4 ELEMENTS
Diode component materialssilicon
Diode typebridge rectifier diode
Phase1
Maximum repetitive peak reverse voltage250 V
Maximum non-repetitive peak forward current55 A
B…C 2300-1500A/B
Silicon-Bridge Rectifiers
Silizium-Brückengleichrichter
Nominal current – Nennstrom
3.5
2.3 / 1.5 A
40…500 V
19 x 3.5 x 10 [mm]
1.3 g
19
Type
Typ
Alternating input voltage
Eingangswechselspannung
~
0.8
+
0.25
~
1.2
1
_
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
8.7
= =
10
5
5
5
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging: plastic tubes
Standard Lieferform: Plastik-Schienen
[+~~–]
[~+~–]
see page 22
siehe Seite 22
Dimensions / Maße in mm
Suffix “A” for pinning / für Anschlußfolge
Suffix “B” for pinning / für Anschlußfolge
Recognized Product – Underwriters Laboratories Inc.® File E175067
Anerkanntes Produkt – Underwriters Laboratories Inc.® Nr. E175067
Maximum ratings
Type
Typ
B40C 2300-1500A/B
B80C 2300-1500A/B
B125C 2300-1500A/B
B250C 2300-1500A/B
B380C 2300-1500A/B
B500C 2300-1500A/B
Alternating input voltage
Eingangswechselspannung
V
VRMS
[V]
40
80
125
250
380
500
Grenzwerte
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM
[V]
1
)
80
160
250
600
800
1000
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50 Hz half sine-wave
Stoßstrom für eine 50 Hz Sinus-Halbwelle
Rating for fusing – Grenzlastintegral, t < 10 ms
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
1
2
f > 15 Hz
T
A
= 25
/
C
T
A
= 25
/
C
I
FRM
I
FSM
i
2
t
T
j
T
S
10 A
2
)
50 A
12.5 A
2
s
– 50...+150
/
C
– 50...+150
/
C
) Valid for one branch – Gültig für einen Brückenzweig
) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig, wenn die Anschlußdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
11.02.2003
1

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