SMD Fast Recovery Rectifiers
CFRC301-G Thru. CFRC307-G
Reverse Voltage: 50 to 1000 Volts
Forward Current: 3.0 Amp
RoHS Device
Features
-Ideal for surface mount applications.
-Easy pick and place.
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
-Fast recovery time: 150~500nS.
-Low leakage current.
0.280(7.11)
0.260(6.60)
DO-214AB (SMC)
0.124(3.15)
0.108(2.75)
0.245(6.22)
0.220(5.59)
Mechanical data
-Case: JEDEC DO-214AB, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Color band denotes cathode end.
-Approx. weight: 0.21 grams
0.103(2.62)
0.079(2.00)
0.320(8.13)
0.305(7.75)
0.012(0.31)
0.006(0.15)
0.050(1.27)
0.030(0.76)
0.008(0.20)
0.004(0.10)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Parameter
Max. repetitive peak reverse voltage
Max. DC blocking voltage
Max. RMS voltage
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
Max. average forward current
Max. instantaneous forward voltage at
3.0A
Reverse recovery time
Max. DC reverse current at T
A
=25
rated DC blocking voltage T
A
=125
Max. thermal resistance (Note 1)
Max. operating junction temperature
Storage temperature
O
Symbol
V
RRM
V
DC
V
RMS
CFRC
301-G
50
50
35
CFRC
302-G
100
100
70
CFRC
303-G
200
200
140
CFRC
304-G
400
400
280
CFRC
305-G
600
600
420
CFRC
306-G
800
800
560
CFRC
307-G
1000
1000
700
Units
V
V
V
I
FSM
100
A
I
O
V
F
T
rr
C
C
I
R
R
θJA
T
J
T
STG
150
3.0
1.3
250
5.0
250
50
150
-55 to +150
O
A
V
500
nS
μA
C/W
O
O
C
C
O
2
Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.0×8.0 mm square land area.
REV:A
QW-BF004
Page 1
Comchip Technology CO., LTD.
SMD Fast Recovery Rectifiers
RATING AND CHARACTERISTIC CURVES (CFRC301-G thru CFRC307-G)
Fig.1 Reverse Characteristics
1000
100
Fig.2 Forward Characteristics
T
J
=125
O
C
Rever s e C urr e n t (μA )
100
10
10
F o r w a rd C u rren t
(A)
1
T
J
=25 C
O
1
0.1
T
J
=25
O
C
Pulse width 300μS
4% duty cycle
0.1
0
30
60
90
120
150
0.01
0
0.4
0.8
1.2
1.6
2.0
Percent of Rated Peak Reverse Voltage (%)
Forward Voltage (V)
Fig.3 Junction Capacitance
140
Fig.4 Non-repetitive Forward Surge Current
100
120
Peak F or ward Surge C ur re nt A )
(
T
J
=25 C
f=1MHz
Vsig=50mVp-p
O
J u n c ti o n C apacian ce(p F )
t
80
T
J
=25 C
8.3ms single half sine
wave, JEDEC method
O
100
80
60
40
20
0
0.1
60
40
20
0
1
10
100
1000
1
10
100
Reverse Voltage (V)
Number of Cycles at 60Hz
Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics
3.5
50Ω
NONINDUCTIVE
10Ω
NONINDUCTIVE
trr
3.0
2.5
2.0
1.5
1.0
0.5
0
1cm
Set time base for
50 / 10nS / cm
Fig.6 Current Derating Curve
+0.5A
(+)
25Vdc
(approx.)
(-)
(-)
D.U.T.
PULSE
GENERATOR
(NOTE 2)
(+)
OSCILLLISCOPE
(NOTE 1)
0
-0.25A
Average Forward Current (A)
1Ω
NON-
INDUCTIVE
Single phase
Half wave 60Hz
NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF.
2. Rise time=10ns max., input impedance=50Ω.
-1.0A
0
25
50
75
100
125
150
O
175
Ambient Temperature (
C)
REV:A
QW-BF004
Page 2
Comchip Technology CO., LTD.
Embedded System
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